SCDS200F June   2005  – January 2018 TS5A3159A

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      Block Diagram
  4. Revision History
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics for 5-V Supply
    6. 6.6 Electrical Characteristics for 3.3-V Supply
    7. 6.7 Electrical Characteristics for 2.5-V Supply
    8. 6.8 Electrical Characteristics for 1.8-V Supply
    9. 6.9 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Device Nomenclature
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics for 3.3-V Supply

V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETERTEST CONDITIONSTAV+MINTYPMAXUNIT
ANALOG SWITCH
VCOM, VNO, VNC Analog signal range 0 V+ V
rpeak Peak ON resistance 0 ≤ (VNO or VNC) ≤ V+,
ICOM = –100 mA,
Switch on,
See Figure 14
25°C 3 V 1.3 1.6 Ω
Full 2
ron ON-state resistance VNO or VNC = 2 V,
ICOM = –100 mA,
Switch on,
See Figure 14
25°C 3 V 1.2 1.5 Ω
Full 1.7
Δron ON-state resistance match between channels VNO or VNC = 2 V, 0.8 V,
ICOM = –100 mA,
Switch on,
See Figure 14
25°C 3 V 0.1 0.15 Ω
Full 0.15
ron(flat) ON-state resistance flatness 0 ≤ (VNO or VNC) ≤ V+,
ICOM = –100 mA,
Switch on,
See Figure 14
25°C 3 V 0.2 Ω
VNO or VNC = 2 V, 0.8 V,
ICOM = –100 mA,
Switch on,
See Figure 14
25°C 0.15 0.3
Full 0.3
INC(OFF),
INO(OFF)
NC, NO
off leakage current
VNC or VNO = 1 V, VCOM = 1 V to 3 V, or
VNC or VNO = 3 V, VCOM = 1 V to 3 V,
Switch off,
See Figure 15
25°C 3.6 V –20 2 20 nA
Full –50 50
INC(PWROFF),
INO(PWROFF)
VNC or VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,
Switch off,
See Figure 15
25°C 0 V –1 0.2 1 μA
Full –15 15
INC(ON),
INO(ON)
NC, NO
on leakage current
VNC or VNO = 1 V, VCOM = Open,
or VNC or VNO = 3 V, VCOM = Open,
Switch on,
See Figure 16
25°C 3.6 V –10 2 10 nA
Full –20 20
ICOM(PWROFF) COM
off leakage current
VNC or VNO = 3.6 V to 0,
VCOM = 0 to 3.6 V,
Switch off,
See Figure 15
25° 0 V –1 0.2 1 μA
Full –15 15
ICOM(ON) COM
on leakage current
VNC or VNO = Open,
VCOM = 1 V, or VNC or
VNO = Open, VCOM = 3 V,
Switch on,
See Figure 16
25°C 3.6 V –10 2 10 nA
Full –20 20
DIGITAL INPUT (IN)
VIH Input logic high Full 2.4 5.5 V
VIL Input logic low Full 0 0.8
IIH, IIL Input leakage current VI = 5.5 V or 0 25°C 3.6 V –2 2 nA
Full –100 100
DYNAMIC
tON Turnon time VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
25°C 3.3 V 5 16 35 ns
Full 3 V to
3.6 V
3 50
tOFF Turnoff time VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
25°C 3.3 V 1 9 20 ns
Full 3 V to
3.6 V
1 30
tBBM Break-before-make time VNC = VNO = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
25°C 3.3 V 9 ns
Full 3 V to
3.6 V
1 40
QC Charge injection VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 23
25°C 3.3 V –11 pC
CNC(OFF),
CNO(OFF)
NC, NO
OFF capacitance
VNC or VNO = V+ or GND, Switch off,
See Figure 17
25°C 3.3 V 18 pF
CNC(ON),
CNO(ON)
NC, NO
ON capacitance
VNC or VNO = V+ or GND, Switch on,
See Figure 17
25°C 3.3 V 55 pF
CCOM(ON) COM
ON capacitance
VCOM = V+ or GND, Switch on,
See Figure 17
25°C 3.3 V 55 pF
CI Digital input capacitance VI = V+ or GND, See Figure 17 25°C 3.3 V 2 pF
BW Bandwidth RL = 50 Ω, Switch on,
See Figure 20
25°C 3.3 V 100 MHz
OISO Off isolation RL = 50 Ω,
f = 1 MHz,
Switch off,
See Figure 21
25°C 3.3 V –64 dB
XTALK Crosstalk RL = 50 Ω,
f = 1 MHz,
Switch on,
See Figure 22
25°C 3.3 V –64 dB
THD Total harmonic distortion RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 24
25°C 3.3 V 0.01%
SUPPLY
I+ Positive supply current VI = V+ or GND, Switch on or off 25°C 3.6 V 10 25 nA
Full 100
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.