SCDS357A July   2014  – December 2014 TS5A3166-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Simplified Schematic
  5. 5 Revision History
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics for 5-V Supply
    6. 7.6 Electrical Characteristics for 3.3-V Supply
    7. 7.7 Electrical Characteristics for 2.5-V Supply
    8. 7.8 Electrical Characteristics for 1.8-V Supply
    9. 7.9 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Trademarks
    2. 13.2 Electrostatic Discharge Caution
    3. 13.3 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings(1)(2)

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
V+ Supply voltage range(3) –0.5 6.5 V
VNO
VCOM		 Analog voltage range(3)(4)(5) –0.5 V+ + 0.5 V
IK Analog port diode current VNO, VCOM < 0 –50 mA
INO
ICOM		 On-state switch current VNO, VCOM = 0 to V+ –200 200 mA
On-state peak switch current(6) –400 400
VI Digital input voltage range(3)(4) –0.5 6.5 V
IIK Digital clamp current VI < 0 –50 mA
I+ Continuous current through V+ 100 mA
IGND Continuous current through GND –100 mA
Tstg Storage temperature range –65 150 °C
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(3) All voltages are with respect to ground, unless otherwise specified.
(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(5) This value is limited to 5.5 V maximum.
(6) Pulse at 1-ms duration < 10% duty cycle.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V
Charged-device model (CDM), per AEC Q100-011 ±1000
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VI/O Input/output voltage 0 5.5 V
V+ Supply voltage 0 5.5 V
VI Control Input Voltage 0 5.5 V
TA Operating free-air temperature –40 125 °C

7.4 Thermal Information

THERMAL METRIC(1) TS5A3166-Q1 UNIT
DCK
5 PINS
RθJA Junction-to-ambient thermal resistance 283.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 92.2
RθJB Junction-to-board thermal resistance 60.8
ψJT Junction-to-top characterization parameter 1.7
ψJB Junction-to-board characterization parameter 60.0
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics for 5-V Supply(1)

V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS TA V+ 85°C 125°C UNIT
MIN TYP MAX MIN TYP MAX
Analog Switch
Analog signal range VCOM,
VNO		 0 V+ 0 V+ V
Peak ON resistance rpeak 0 ≤ VNO ≤ V+,
ICOM = –100 mA,		 Switch ON,
See Figure 13		 25°C 4.5 V 0.8 1.1 0.8 1.1 Ω
Full 1.2 1.44
ON-state resistance ron VNO = 2.5 V,
ICOM = –100 mA,		 Switch ON,
See Figure 13		 25°C 4.5 V 0.7 0.9 0.7 0.9 Ω
Full 1 1.2
ON-state resistance
flatness		 ron(flat) 0 ≤ VNO ≤ V+,
ICOM = –100 mA,		 Switch ON,
See Figure 13		 25°C 4.5 V 0.15 0.15 Ω
VNO = 1 V, 1.5 V,
2.5 V,
ICOM = –100 mA,		 25°C 0.09 0.15 0.09 0.15
Full 0.15 0.18
NO
OFF leakage current		 INO(OFF) VNO = 1 V,
VCOM = 4.5 V,
or
VNO = 4.5 V,
VCOM = 1 V,		 Switch OFF,
See Figure 14		 25°C 5.5 V –20 4 20 –80 4 80 nA
Full –100 100 –400 400
INO(PWROFF) VNO = 0 to 5.5 V,
VCOM = 5.5 V to 0, 		25°C 0 V –5 0.4 5 –5 0.4 5 μA
Full –15 15 –30 30
COM
OFF leakage current		 ICOM(OFF) VCOM = 1 V,
VNO = 4.5 V,
or
VCOM = 4.5 V,
VNO = 1 V,		 Switch OFF,
See Figure 14		 25°C 5.5 V –20 4 20 –80 4 80 nA
Full –100 100 –400 400
ICOM(PWROFF) VCOM = 5.5 V to 0,
VNO = 0 to 5.5 V,		 25°C 0 V –5 0.4 5 –5 0.4 5 μA
Full –15 15 –30 30
NO
ON leakage current		 INO(ON) VNO = 1 V,
VCOM = Open,
or
VNO = 4.5 V,
VCOM = Open,		 Switch ON,
See Figure 15		 25°C 5.5 V –2 0.3 2 –80 0.3 80 nA
Full –20 20 –400 400
COM
ON leakage current		 ICOM(ON) VCOM = 1 V,
VNO = Open,
or
VCOM = 4.5 V,
VNO = Open,		 Switch ON,
See Figure 15		 25°C 5.5 V –2 0.3 2 –80 0.3 80 nA
Full –20 20 –400 400
Digital Control Inputs (IN)
Input logic high VIH Full 2.4 5.5 2.4 5.5 V
Input logic low VIL Full 0 0.8 0 0.8 V
Input leakage
current		 IIH, IIL VI = 5.5 V or 0 25°C 5.5 V –2 0.3 2 nA
Full –20 20 –400 400
Dynamic
Turn-on time tON VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
See Figure 17		 25°C 5 V 2.5 4.5 7 2.5 4.5 7 ns
Full 4.5 V to
5.5 V		 1.5 7.5 1.5 7.5
Turn-off time tOFF VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
See Figure 17		 25°C 5 V 6 9 11.5 6 9 11.5 ns
Full 4.5 V to
5.5 V		 4 12.5 4 12.5
Charge injection QC VGEN = 0,
RGEN = 0 ,		 CL = 1 nF,
See Figure 20		 25°C 5 V 1 1 pC
NO
OFF capacitance		 CNO(OFF) VNO = V+ or GND,
Switch OFF,		 See Figure 16 25°C 5 V 19 19 pF
COM
OFF capacitance		 CCOM(OFF) VCOM = V+ or GND,
Switch OFF,		 See Figure 16 25°C 5 V 18 18 pF
NO
ON capacitance		 CNO(ON) VNO = V+ or GND,
Switch ON,		 See Figure 16 25°C 5 V 35.5 35.5 pF
COM
ON capacitance		 CCOM(ON) VCOM = V+ or GND,
Switch ON,		 See Figure 16 25°C 5 V 35.5 35.5 pF
Digital input
capacitance		 CI VI = V+ or GND, See Figure 16 25°C 5 V 2 2 pF
Bandwidth BW RL = 50 Ω,
Switch ON,		 See Figure 18 25°C 5 V 200 200 MHz
OFF isolation OISO RL = 50 Ω,
f = 1 MHz,		 Switch OFF,
See Figure 19		 25°C 5 V –64 –64 dB
Total harmonic
distortion		 THD RL = 600 Ω,
CL = 50 pF,		 f = 20 Hz to 20 kHz,
See Figure 21		 25°C 5 V 0.005 0.005 %
Supply
Positive supply
current		 I+ VI = V+ or GND, Switch ON or OFF 25°C 5.5 V 0.01 0.1 0.01 0.1 μA
Full 0.5 0.8
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.

7.6 Electrical Characteristics for 3.3-V Supply(1)

V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS TA V+ 85°C 125°C UNIT
MIN TYP MAX MIN TYP MAX
Analog Switch
Analog signal range VCOM,
VNO		 0 V+ 0 V+ V
Peak ON resistance rpeak 0 ≤ VNO ≤ V+,
ICOM = –100 mA,		 Switch ON,
See Figure 13		 25°C 3 V 1.1 1.5 1.1 1.5 Ω
Full 1.7 2.07
ON-state resistance ron VNO = 2 V,
ICOM = –100 mA,		 Switch ON,
See Figure 13		 25°C 3 V 1 1.4 1 1.4 Ω
Full 1.5 1.8
ON-state resistance
flatness		 ron(flat) 0 ≤ VNO ≤ V+,
ICOM = –100 mA,		 Switch ON,
See Figure 13		 25°C 3 V 0.3 0.3 Ω
VNO = 2 V, 0.8 V,
ICOM = –100 mA,		 25°C 0.09 0.15 0.09 0.15
Full 0.15 0.18
NO
OFF leakage current		 INO(OFF) VNO = 1 V,
VCOM = 3 V,
or
VNO = 3 V,
VCOM = 1 V,		 Switch OFF,
See Figure 14		 25°C 3.6 V –2 0.5 2 –2 0.5 2 nA
Full –20 20 –360 360
INO(PWROFF) VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,		 25°C 0 V –1 0.1 1 –1 0.1 1 μA
Full –5 5 –27 27
COM
OFF leakage current		 ICOM(OFF) VCOM = 1 V,
VNO = 3 V,
or
VCOM = 3 V,
VNO = 1 V,		 Switch OFF,
See Figure 14		 25°C 3.6 V –2 0.5 2 –72 0.5 72 nA
Full –20 20 –360 360
ICOM(PWROFF) VCOM = 3.6 V to 0,
VNO = 0 to 3.6 V,		 25°C 0 V –1 0.1 1 –2 0.1 2 μA
Full –5 5 –27 27
NO
ON leakage current		 INO(ON) VNO = 1 V,
VCOM = Open,
or
VNO = 3 V,
VCOM = Open,		 Switch ON,
See Figure 15		 25°C 3.6 V –2 0.2 2 –72 72 nA
Full –20 20 –360 360
COM
ON leakage current		 ICOM(ON) VCOM = 1 V,
VNO = Open,
or
VCOM = 3 V,
VNO = Open,		 Switch ON,
See Figure 15		 25°C 3.6 V –2 0.2 2 –72 72 nA
Full –20 20 –360 360
Digital Control Inputs (IN)
Input logic high VIH Full 2 5.5 2 5.5 V
Input logic low VIL Full 0 0.8 0 0.8 V
Input leakage current IIH, IIL VI = 5.5 V or 0 25°C 3.6 V –2 0.3 2 nA
Full –20 20 –360 360
Dynamic
Turn-on time tON VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
See Figure 17		 25°C 3.3 V 2 5 10 2 5 10 ns
Full 3 V to
3.6 V		 1.5 11 1.5 11
Turn-off time tOFF VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
See Figure 17		 25°C 3.3 V 6.5 9 12 6.5 9 12 ns
Full 3 V to
3.6 V		 4 13 4 13
Charge injection QC VGEN = 0,
RGEN = 0, 		CL = 1 nF,
See Figure 21		 25°C 3.3 V 1 1 pC
NO
OFF capacitance		 CNO(OFF) VNO = V+ or GND,
Switch OFF,		 See Figure 16 25°C 3.3 V 19 19 pF
COM
OFF capacitance		 CCOM(OFF) VCOM = V+ or GND,
Switch OFF,		 See Figure 16 25°C 3.3 V 18 18 pF
NO
ON capacitance		 CNO(ON) VNO = V+ or GND,
Switch ON,		 See Figure 16 25°C 3.3 V 36 36 pF
COM
ON capacitance		 CCOM(ON) VCOM = V+ or GND,
Switch ON,		 See Figure 16 25°C 3.3 V 36 36 pF
Digital input
capacitance		 CI VI = V+ or GND, See Figure 16 25°C 3.3 V 2 2 pF
Bandwidth BW RL = 50 Ω,
Switch ON,		 See Figure 18 25°C 3.3 V 200 200 MHz
OFF isolation OISO RL = 50 Ω,
f = 1 MHz,		 Switch OFF,
See Figure 19		 25°C 3.3 V –64 –64 dB
Total harmonic
distortion		 THD RL = 600 Ω,
CL = 50 pF,		 f = 20 Hz to 20 kHz,
See Figure 21		 25°C 3.3 V 0.01 0.01 %
Supply
Positive supply
current		 I+ VI = V+ or GND, Switch ON or OFF 25°C 3.6 V 0.01 0.1 0.01 0.1 μA
Full 0.25 0.7
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum

7.7 Electrical Characteristics for 2.5-V Supply(1)

V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS TA V+ 85°C 125°C UNIT
MIN TYP MAX MIN TYP MAX
Analog Switch
Analog signal range VCOM,
VNO		 2.3 V 0 V+ 0 V+ V
Peak ON resistance rpeak 0 ≤ VNO ≤ V+,
ICOM = –100 mA,		 Switch ON,
See Figure 13		 25°C 2.3 V 1.8 2.4 1.8 2.4 Ω
Full 2.6 3.1
ON-state resistance ron VNO = 2 V,
ICOM = –100 mA,		 Switch ON,
See Figure 13		 25°C 2.3 V 1.2 2.1 1.2 2.1 Ω
Full 2.4 2.88
ON-state resistance
flatness		 ron(flat) 0 ≤ VNO ≤ V+,
ICOM = –100 mA,		 Switch ON,
See Figure 13		 25°C 2.3 V 0.7 0.7 Ω
VNO = 2 V, 0.8 V,
ICOM = –100 mA,		 25°C 0.4 0.6 0.4 0.6
Full 0.6 0.72
NO
OFF leakage current		 INO(OFF) VNO = 1 V,
VCOM = 3 V,
or
VNO = 3 V,
VCOM = 1 V,		 Switch OFF,
See Figure 14		 25°C 2.7 V –5 0.3 5 –64 0.3 64 nA
Full –50 50 –320 320
INO(PWROFF) VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,		 25°C 0 V –2 0.05 2 –2 0.05 2 μA
Full –15 15 –24 24
COM
OFF leakage current		 ICOM(OFF) VCOM = 1 V,
VNO = 3 V,
or
VCOM = 3 V,
VNO = 1 V,		 Switch OFF,
See Figure 14		 25°C 2.7 V –5 0.3 5 –64 0.3 64 nA
Full –50 50 –320 320
ICOM(PWROFF) VCOM = 3.6 V to 0,
VNO = 0 to 3.6 V,		 25°C 0 V –2 0.05 2 –2 0.05 2 μA
Full –15 15 –24 24
NO
ON leakage current		 INO(ON) VNO = 1 V,
VCOM = Open,
or
VNO = 3 V,
VCOM = Open,		 Switch ON,
See Figure 15		 25°C 2.7 V –2 0.3 2 –64 64 nA
Full –20 20 –320 320
COM
ON leakage current		 ICOM(ON) VCOM = 1 V,
VNO = Open,
or
VCOM = 3 V,
VNO = Open,		 Switch ON,
See Figure 15		 25°C 2.7 V –2 0.3 2 –64 0.3 64 nA
Full –20 20 –320 320
Digital Control Inputs (IN1, IN2)
Input logic high VIH Full 1.8 5.5 1.8 5.5 V
Input logic low VIL Full 0 0.6 0 0.6 V
Input leakage current IIH, IIL VI = 5.5 V or 0 25°C 2.7 V –2 0.3 2 nA
Full –20 20 –320 320
Dynamic
Turn-on time tON VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
See Figure 17		 25°C 2.5 V 2 6 10 2 6 10 ns
Full 2.3 V to 2.7 V 1 12 1 12
Turn-off time tOFF VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
See Figure 17		 25°C 2.5 V 4.5 8 10.5 4.5 8 10.5 ns
Full 2.3 V to 2.7 V 3 15 3 15
Charge injection QC VGEN = 0,
RGEN = 0, 		CL = 1 nF,
See Figure 21		 25°C 2.5 V 4 4 pC
NO
OFF capacitance		 CNO(OFF) VNO = V+ or GND,
Switch OFF,		 See Figure 16 25°C 2.5 V 19.5 19.5 pF
COM
OFF capacitance		 CCOM(OFF) VCOM = V+ or GND,
Switch OFF,		 See Figure 16 25°C 2.5 V 18.5 18.5 pF
NO
ON capacitance		 CNO(ON) VNO = V+ or GND,
Switch ON,		 See Figure 16 25°C 2.5 V 36.5 36.5 pF
COM
ON capacitance		 CCOM(ON) VCOM = V+ or GND,
Switch ON,		 See Figure 16 25°C 2.5 V 36.5 36.5 pF
Digital input
capacitance		 CI VI = V+ or GND, See Figure 16 25°C 2.5 V 2 2 pF
Bandwidth BW RL = 50 Ω,
Switch ON,		 See Figure 18 25°C 2.5 V 150 150 MHz
OFF isolation OISO RL = 50 Ω,
f = 1 MHz,		 Switch OFF,
See Figure 19		 25°C 2.5 V –62 –62 dB
Total harmonic
distortion		 THD RL = 600 Ω,
CL = 50 pF,		 f = 20 Hz to 20 kHz,
See Figure 21		 25°C 2.5 V 0.02 0.02 %
Supply
Positive supply
current		 I+ VI = V+ or GND, Switch ON or OFF 25°C 2.7 V 0.001 0.02 0.001 0.02 μA
Full 0.25 0.6
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum

7.8 Electrical Characteristics for 1.8-V Supply(1)

V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted))
PARAMETER SYMBOL TEST CONDITIONS TA V+ 85°C 125°C UNIT
MIN TYP MAX MIN TYP MAX
Analog Switch
Analog signal range VCOM,
VNO		 0 V+ 0 V+ V
Peak ON resistance rpeak 0 ≤ VNO ≤ V+,
ICOM = –100 mA,		 Switch ON,
See Figure 13		 25°C 1.65 V 4.2 25 4.2 25 Ω
Full 30 36
ON-state resistance ron VNO = 2 V,
ICOM = –100 mA,		 Switch ON,
See Figure 13		 25°C 1.65 V 1.6 3.9 1.6 3.9 Ω
Full 4.0 4.8
ON-state resistance
flatness		 ron(flat) 0 ≤ VNO ≤ V+,
ICOM = –100 mA,		 Switch ON,
See Figure 13		 25°C 1.65 V 2.8 2.8 Ω
VNO = 2 V, 0.8 V,
ICOM = –100 mA,		 25°C 4.1 22 4.1 22
Full 27 32.4
NO
OFF leakage current		 INO(OFF) VNO = 1 V,
VCOM = 3 V,
or
VNO = 3 V,
VCOM = 1 V,		 Switch OFF,
See Figure 14		 25°C 1.95 V –5 5 –58 58 nA
Full –50 50 –320 320
INO(PWROFF) VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,		 25°C 0 V –2 2 –2 2 μA
Full –10 10 –22 22
COM
OFF leakage current		 ICOM(OFF) VCOM = 1 V,
VNO = 3 V,
or
VCOM = 3 V,
VNO = 1 V,		 Switch OFF,
See Figure 14		 25°C 1.95 V –5 5 –58 58 nA
Full –50 50 –320 320
ICOM(PWROFF) VCOM = 0 to 3.6 V,
VNO = 3.6 V to 0,		 25°C 0 V –2 2 –2 2 μA
Full –10 10 –22 22
NO
ON leakage current		 INO(ON) VNO = 1 V,
VCOM = Open,
or
VNO = 3 V,
VCOM = Open,		 Switch ON,
See Figure 15		 25°C 1.95 V –2 2 –58 58 nA
Full –20 20 –320 320
COM
ON leakage current		 ICOM(ON) VCOM = 1 V,
VNO = Open,
or
VCOM = 3 V,
VNO = Open,		 Switch ON,
See Figure 15		 25°C 1.95 V –2 2 –58 58 nA
Full –20 20 –320 320
Digital Control Inputs (IN1, IN2)
Input logic high VIH Full 1.5 5.5 1.5 5.5 V
Input logic low VIL Full 0 0.6 0 0.6 V
Input leakage current IIH, IIL VI = 5.5 V or 0 25°C 1.95 V –2 0.3 2 nA
Full –20 20 –320 320
Dynamic
Turn-on time tON VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
See Figure 17		 25°C 1.8 V 3 9 18 3 9 18 ns
Full 1.65 V to
1.95 V		 1 20 1 20
Turn-off time tOFF VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
See Figure 17		 25°C 1.8 V 5 10 15.5 5 10 15.5 ns
Full 1.65 V to
1.95 V		 4 18.5 4 18.5
Charge injection QC VGEN = 0,
RGEN = 0, 		CL = 1 nF,
See Figure 21		 25°C 1.8 V 2 2 pC
NO
OFF capacitance		 CNO(OFF) VNO = V+ or GND,
Switch OFF,		 See Figure 16 25°C 1.8 V 19.5 19.5 pF
COM
OFF capacitance		 CCOM(OFF) VCOM = V+ or GND,
Switch OFF,		 See Figure 16 25°C 1.8 V 18.5 18.5 pF
NO
ON capacitance		 CNO(ON) VNO = V+ or GND,
Switch ON,		 See Figure 16 25°C 1.8 V 36.5 36.5 pF
COM
ON capacitance		 CCOM(ON) VCOM = V+ or GND,
Switch ON,		 See Figure 16 25°C 1.8 V 36.5 36.5 pF
Digital input
capacitance		 CI VI = V+ or GND, See Figure 16 25°C 1.8 V 2 2 pF
Bandwidth BW RL = 50 Ω,
Switch ON,		 See Figure 18 25°C 1.8 V 150 150 MHz
OFF isolation OISO RL = 50 Ω,
f = 1 MHz,		 Switch OFF,
See Figure 19		 25°C 1.8 V –62 –62 dB
Total harmonic
distortion		 THD RL = 600 Ω,
CL = 50 pF,		 f = 20 Hz to 20 kHz
See Figure 21		 25°C 1.8 V 0.055 0.055 %
Supply
Positive supply
current		 I+ VI = V+ or GND, Switch ON or OFF 25°C 1.95 V 0.001 0.01 0.001 0.01 μA
Full 0.15 0.6
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum

7.9 Typical Characteristics

grp1_cds187.gifFigure 1. ron vs VCOM
grp3_cds187.gifFigure 3. ron vs VCOM (V+ = 5 V)
grp5_cds187.gifFigure 5. Charge Injection (QC) vs VCOM
grp7_cds187.gifFigure 7. tON and tOFF vs Temperature (V+ = 5 V)
grp9_cds187.gifFigure 9. Gain vs Frequency (V+ = 5 V)
grp11_cds187.gifFigure 11. Total Harmonic Distortion vs Frequency
(V+ = 5 V)
grp2_cds187.gifFigure 2. ron vs VCOM (V+ = 3 V)
grp4_cds187.gifFigure 4. Leakage Current vs Temperature (V+ = 5.5 V)
grp6_cds187.gifFigure 6. tON and tOFF vs Supply Voltage
grp8_cds187.gifFigure 8. Logic Threshold vs V+
grp1x_cds187.gifFigure 10. OFF Isolation vs Frequency (V+ = 5 V)
grp12_cds187.gifFigure 12. Power-Supply Current vs Temperature
(V+ = 5 V)