SLVSH43C July   2023  – May 2025 TSD03 , TSD05 , TSD12 , TSD15 , TSD18 , TSD24 , TSD36

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings - JEDEC Specification
    3. 5.3  ESD Ratings - IEC Specification
    4. 5.4  Recommended Operating Conditions
    5. 5.5  Thermal Information
    6. 5.6  Electrical Characteristics - TSD03
    7. 5.7  Electrical Characteristics - TSD05
    8. 5.8  Electrical Characteristics - TSD12
    9. 5.9  Electrical Characteristics - TSD15
    10. 5.10 Electrical Characteristics - TSD18
    11. 5.11 Electrical Characteristics - TSD24
    12. 5.12 Electrical Characteristics - TSD36
    13. 5.13 Typical Characteristics
  7. 6Application and Implementation
    1. 6.1 Application Information
  8. 7Device and Documentation Support
    1. 7.1 Documentation Support
      1. 7.1.1 Related Documentation
    2. 7.2 Receiving Notification of Documentation Updates
    3. 7.3 Support Resources
    4. 7.4 Trademarks
    5. 7.5 Electrostatic Discharge Caution
    6. 7.6 Glossary
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information
    1. 9.1 Tape and Reel Information
    2. 9.2 Mechanical Data

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DYF|2
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.10 Electrical Characteristics - TSD18

At TA=25℃ (unless otherwise noted) (1)
PARAMETER TEST CONDITION MIN TYP MAX UNIT
VRWM Reverse stand-off voltage IIO <50nA, across operating temperature range 18 V
VBR Breakdown voltage IIO = 10mA, IO to GND 18.5 V
ILEAK Reverse leakage current VIO = 18V, IO to GND 2 20 nA
VFWD Forward voltage IIO = 10mA,  GND to IO 0.7 V
VCLAMP Surge clamping voltage, tp = 8/20µs (2) IPP = 1A, IO to GND 25 V
IPP = 5A, IO to GND 26 V
IPP = 15A, IO to GND 31 V
IPP = 15A, GND to IO 7 V
TLP clamping voltage, tp = 100ns IPP = 16A, IO to GND 23 V
IPP =16A, GND to IO 3 V
CL Line capacitance VIO = 0V;  ƒ = 1MHz, IO to GND 12 pF
(1) Typical parameters are measured at 25°C
(2) Nonrepetitive current pulse 8 to 20µs exponentially decaying waveform according to IEC 61000-4-5