SLUS504H SEPTEMBER   2002  – January 2016 UCC27321 , UCC27322 , UCC37321 , UCC37322

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Description (continued)
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Power Dissipation Ratings
    8. 7.8 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Stage
      2. 8.3.2 Output Stage
      3. 8.3.3 Source and Sink Capabilities during Miller Plateau
      4. 8.3.4 Enable
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input-to-Output Configuration
        2. 9.2.2.2 Input Threshold Type
        3. 9.2.2.3 VDD Bias Supply Voltage
        4. 9.2.2.4 Peak Source and Sink Currents
        5. 9.2.2.5 Enable and Disable Function
        6. 9.2.2.6 Propagation Delay
        7. 9.2.2.7 Power Dissipation
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Information
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Related Products
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Related Links
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • P|8
  • DGN|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10 Power Supply Recommendations

Although quiescent VDD current is very low, total supply current is higher, depending on OUTA and OUTB current and the operating frequency. Total VDD current is the sum of quiescent VDD current and the average OUT current. Knowing the operating frequency and the MOSFET gate charge (Qg), average OUT current can be calculated using Equation 6.

Equation 6. IOUT = Qg × f

where

  • f is frequency

For the best high-speed circuit performance, TI recommends two VDD bypass capacitors to prevent noise problems. TI also highly recommends using surface mount components. A 0.1-µF ceramic capacitor must be placed closest to the VDD to ground connection. In addition, a larger capacitor (such as 1 µF) with relatively low ESR should be connected in parallel to help deliver the high current peaks to the load. The parallel combination of capacitors presents a low impedance characteristic for the expected current levels in the driver application.