SLUS458H July   2000  – November 2022 UCC28C40 , UCC28C41 , UCC28C42 , UCC28C43 , UCC28C44 , UCC28C45 , UCC38C40 , UCC38C41 , UCC38C42 , UCC38C43 , UCC38C44 , UCC38C45

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Detailed Pin Description
        1. 8.3.1.1 COMP
        2. 8.3.1.2 FB
        3. 8.3.1.3 CS
        4. 8.3.1.4 RT/CT
        5. 8.3.1.5 GND
        6. 8.3.1.6 OUT
        7. 8.3.1.7 VDD
        8. 8.3.1.8 VREF
      2. 8.3.2  Undervoltage Lockout
      3. 8.3.3  ±1% Internal Reference Voltage
      4. 8.3.4  Current Sense and Overcurrent Limit
      5. 8.3.5  Reduced-Discharge Current Variation
      6. 8.3.6  Oscillator Synchronization
      7. 8.3.7  Soft-Start Timing
      8. 8.3.8  Enable and Disable
      9. 8.3.9  Slope Compensation
      10. 8.3.10 Voltage Mode
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation
      2. 8.4.2 UVLO Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Input Bulk Capacitor and Minimum Bulk Voltage
        2. 9.2.2.2  Transformer Turns Ratio and Maximum Duty Cycle
        3. 9.2.2.3  Transformer Inductance and Peak Currents
        4. 9.2.2.4  Output Capacitor
        5. 9.2.2.5  Current Sensing Network
        6. 9.2.2.6  Gate Drive Resistor
        7. 9.2.2.7  VREF Capacitor
        8. 9.2.2.8  RT/CT
        9. 9.2.2.9  Start-Up Circuit
        10. 9.2.2.10 Voltage Feedback Compensation
          1. 9.2.2.10.1 Power Stage Poles and Zeroes
          2. 9.2.2.10.2 Slope Compensation
          3. 9.2.2.10.3 Open-Loop Gain
          4. 9.2.2.10.4 Compensation Loop
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
        1. 9.4.1.1 Precautions
        2. 9.4.1.2 Feedback Traces
        3. 9.4.1.3 Bypass Capacitors
        4. 9.4.1.4 Compensation Components
        5. 9.4.1.5 Traces and Ground Planes
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Third-Party Products Disclaimer
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • DGK|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.2.2.6 Gate Drive Resistor

RG is the gate driver resistor for the power switch (QSW). The selection of this resistor value must be done in conjunction with EMI compliance testing and efficiency testing. Using a larger resistor value for RG slows down the turnon and turnoff of the MOSFET. A slower switching speed reduces EMI but also increases the switching loss. A tradeoff between switching loss and EMI performance must be carefully performed. For this design, a 10‑Ω resistor was chosen for the gate drive resistor.