SBOS395 Data sheet

SBOS395D October 2007 – September 2015 VCA820

PRODUCTION DATA.

Package Options

Mechanical Data (Package|Pins)

DGS|10
- MPDS035C
D|14
- MPDS177G

Thermal pad, mechanical data (Package|Pins)

D|14
- QFND304D

Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

	MIN	MAX	UNIT
Power supply		±6.3	V
Internal power dissipation	See Thermal Information
Input voltage		±V_S	V
Junction temperature (T_J)		150	°C
Junction temperature (T_J), maximum continuous operation		140	°C
Storage temperature	–65	125	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
		Charged device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500
		Machine model (MM)	±200

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
Operating voltage		7	10	12	V
Operating temperature		–40	25	85	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		VCA820		UNIT
		D [SOIC]	DGS [VSSOP]
		14 PINS	10 PINS
R_θJA	Junction-to-ambient thermal resistance	80	130	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	49.8	46.6	°C/W
R_θJB	Junction-to-board thermal resistance	44.9	94.3	°C/W
ψ_JT	Junction-to-top characterization parameter	13.8	2.2	°C/W
ψ_JB	Junction-to-board characterization parameter	44.6	92.7	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	n/a	n/a	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics: V_S = ±5 V

At A_VMAX = 20 dB, R_F = 1 kΩ, R_G = 200 Ω, and R_L = 100 Ω, unless otherwise noted.

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT	TEST LEVEL⁽²⁾
AC PERFORMANCE
Small-signal bandwidth (SO-14 package)		A_VMAX = 6 dB, V_O = 1 V_PP, V_G = +2 V	T_J = 25°C		168		MHz	C
		A_VMAX = 20 dB, V_O = 1 V_PP, V_G = +2 V	T_J = 25°C		150
		A_VMAX = 40 dB, V_O = 1 V_PP, V_G = +2 V	T_J = 25°C		118
Large-signal bandwidth		A_VMAX = 20 dB, V_O = 5 V_PP, V_G = +2 V	T_J = 25°C		137		MHz	C
Gain control bandwidth		V_G = 1 V_DC + 10 mV_PP	T_J = 25°C	170	200		MHz	B
			T_J = 0°C to 70°C⁽¹⁾	170
			T_J = –40°C to 85°C⁽¹⁾	165
Bandwidth for 0.1dB flatness		A_VMAX = 20 dB, V_O = 1 V_PP, V_G = +2 V	T_J = 25°C		28		MHz	C
Slew rate		A_VMAX = 20 dB, V_O = 5-V step, V_G = +2 V	T_J = 25°C	1500	1700		V/μs	B
			T_J = 0°C to 70°C⁽¹⁾	1500
			T_J = –40°C to 85°C⁽¹⁾	1450
Rise-and-fall time		A_VMAX = 20 dB, V_O = 5-V step, V_G = +2 V	T_J = 25°C		2.5	3.1	ns	B
			T_J = 0°C to 70°C⁽¹⁾			3.2
			T_J = –40°C to 85°C⁽¹⁾			3.2
Settling time to 0.01%		A_VMAX = 20 dB, V_O = 5-V step, V_G = +2 V	T_J = 25°C		11		ns	C
Harmonic distortion
	2nd-harmonic	V_O = 2 V_PP, f = 20 MHz	T_J = 25°C	–60	–62		dBc	B
			T_J = 0°C to 70°C⁽¹⁾	–60
			T_J = –40°C to 85°C⁽¹⁾	–60
	3rd-harmonic	V_O = 2 V_PP, f = 20 MHz	T_J = 25°C	–66	–68		dBc	B
			T_J = 0°C to 70°C⁽¹⁾	–66
			T_J = –40°C to 85°C⁽¹⁾	–66
Input voltage noise		f > 100 kHz	T_J = 25°C		8.2		nV/√Hz	C
Input current noise		f > 100 kHz	T_J = 25°C		2.6		pA/√Hz
GAIN CONTROL
Absolute gain error		A_VMAX = 20 dB, V_G = 2 V	T_J = 25°C		±0.1	±0.4	dB	A
			T_J = 0°C to 70°C⁽¹⁾			±0.5
			T_J = –40°C to 85°C⁽¹⁾			±0.6
V_CTRL0			T_J = 25°C		0.85		V	C
V_SLOPE			T_J = 25°C		0.09		V	C
Absolute gain error		A_VMAX = 20 dB, V_G = 1 V, (G = 18.06 dB)	T_J = 25°C		±0.3	±0.4	dB	A
			T_J = 0°C to 70°C⁽¹⁾			±0.5
			T_J = –40°C to 85°C⁽¹⁾			±0.6
Gain at V_G = 0.2V		Relative to maximum gain	T_J = 25°C		–26	–24	dB	A
			T_J = 0°C to 70°C⁽¹⁾			–24
			T_J = –40°C to 85°C⁽¹⁾			–23
Gain at V_G = 0.2V		Relative to maximum gain	T_J = 25°C		–26	–24	dB	A
			T_J = 0°C to 70°C⁽¹⁾			–24
			T_J = –40°C to 85°C⁽¹⁾			–23
Gain control bias current			T_J = 25°C		10	16	μA	A
			T_J = 0°C to 70°C⁽¹⁾			16.6
			T_J = –40°C to 85°C⁽¹⁾			16.7
	Average gain control bias current drift		T_J = 0°C to 70°C⁽¹⁾			±12	nA/°C	B
	Average gain control bias current drift		T_J = –40°C to 85°C⁽¹⁾			±12	nA/°C	B
Gain control input impedance			T_J = 25°C		70 \|\| 1		kΩ \|\| pF	C
DC PERFORMANCE
Input offset voltage		A_VMAX = 20 dB, V_CM = 0 V, V_G = 1 V	T_J = 25°C		±4	±17	mV	A
			T_J = 0°C to 70°C⁽¹⁾			±17.8
			T_J = –40°C to 85°C⁽¹⁾			±19
	Average input offset voltage drift	A_VMAX = 20 dB, V_CM = 0 V, V_G = 1 V	T_J = 0°C to 70°C⁽¹⁾			30	μV/°C	B
	Average input offset voltage drift	A_VMAX = 20 dB, V_CM = 0 V, V_G = 1 V	T_J = –40°C to 85°C⁽¹⁾			30	μV/°C	B
Input bias current		A_VMAX = 20 dB, V_CM = 0 V, V_G = 1 V	T_J = 25°C		19	25	μA	A
			T_J = 0°C to 70°C⁽¹⁾			29
			T_J = –40°C to 85°C⁽¹⁾			31
	Average input bias current drift	A_VMAX = 20 dB, V_CM = 0 V, V_G = 1 V	T_J = 0°C to 70°C⁽¹⁾			90	nA/°C	B
	Average input bias current drift	A_VMAX = 20 dB, V_CM = 0 V, V_G = 1 V	T_J = –40°C to 85°C⁽¹⁾			90	nA/°C	B
Input offset current		A_VMAX = 20 dB, V_CM = 0 V, V_G = 1 V	T_J = 25°C		±0.5	±2.5	μA	A
			T_J = 0°C to 70°C⁽¹⁾			±3.2
			T_J = –40°C to 85°C⁽¹⁾			±3.5
	Average input offset current drift	A_VMAX = 20 dB, V_CM = 0 V, V_G = 1 V	T_J = 0°C to 70°C⁽¹⁾			±16	nA/°C	B
	Average input offset current drift	A_VMAX = 20 dB, V_CM = 0 V, V_G = 1 V	T_J = –40°C to 85°C⁽¹⁾			±16	nA/°C	B
Maximum current through gain resistance			T_J = 25°C		±2.6	±2.55	mA	B
			T_J = 0°C to 70°C⁽¹⁾			±2.55
			T_J = –40°C to 85°C⁽¹⁾			±2.5
INPUT
Most positive common-mode input voltage		R_L = 100 Ω	T_J = 25°C	+1.6	+1.6		V	A
			T_J = 0°C to 70°C⁽¹⁾	+1.6
			T_J = –40°C to 85°C⁽¹⁾	+1.6
Most negative common-mode input voltage		R_L = 100 Ω	T_J = 25°C		–2.1	–2.1	V	A
			T_J = 0°C to 70°C⁽¹⁾			–2.1
			T_J = –40°C to 85°C⁽¹⁾			–2.1
Common-mode rejection ratio		V_CM = ±0.5 V	T_J = 25°C	65	80		dB	A
			T_J = 0°C to 70°C⁽¹⁾	60
			T_J = –40°C to 85°C⁽¹⁾	60
Input impedance
	Differential		T_J = 25°C		0.5 \|\| 1		MΩ \|\| pF	C
	Common-mode		T_J = 25°C		0.5 \|\| 2		MΩ \|\| pF	C
OUTPUT
Output voltage swing		R_L = 1 kΩ	T_J = 25°C	±3.8	±4.0		V	A
			T_J = 0°C to 70°C⁽¹⁾	±3.75
			T_J = –40°C to 85°C⁽¹⁾	±3.7
		R_L = 100 Ω	T_J = 25°C	±3.7	±3.9		V	A
			T_J = 0°C to 70°C⁽¹⁾	±3.6
			T_J = –40°C to 85°C⁽¹⁾	±3.5
Output current		V_O = 0 V, R_L = 5 Ω	T_J = 25°C	±140	±160		mA	A
			T_J = 0°C to 70°C⁽¹⁾	±130
			T_J = –40°C to 85°C⁽¹⁾	±130
Output impedance		A_VMAX = 20 dB, f > 100 kHz, V_G = +2 V	T_J = 25°C		0.01		Ω	C
POWER SUPPLY
Specified operating voltage			T_J = 25°C		±5		V	C
Minimum operating voltage			T_J = 25°C		±3.5		V	C
Maximum operating voltage			T_J = 25°C			±6	V	A
			T_J = 0°C to 70°C⁽¹⁾			±6
			T_J = –40°C to 85°C⁽¹⁾			±6
Maximum quiescent current		V_G = 1 V	T_J = 25°C		34	35	mA	A
			T_J = 0°C to 70°C⁽¹⁾			35.5
			T_J = –40°C to 85°C⁽¹⁾			36
Minimum quiescent current		V_G = 1 V	T_J = 25°C		34	32.5	mA	A
			T_J = 0°C to 70°C⁽¹⁾			32
			T_J = –40°C to 85°C⁽¹⁾			31.5
Power-supply rejection ratio (–PSRR)			T_J = 25°C	–61	–68		dB	A
			T_J = 0°C to 70°C⁽¹⁾	–59
			T_J = –40°C to 85°C⁽¹⁾	–58

(1) Junction temperature = ambient at low temperature limit; junction temperature = ambient +23°C at high temperature limit for over temperature specifications.

(2) Test levels: (A) 100% tested at +25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information.

7.6 Typical Characteristics: V_S = ±5 V, DC Parameters

At T_A = +25°C, R_L = 100 Ω, V_G = +1 V, and V_IN = single-ended input on +V_IN with –V_IN at ground, unless otherwise noted.

Figure 1. Maximum Differential Input Voltage vs Gain Resistor

Figure 3. Maximum Gain Adjust Range vs Peak-to-Peak Output Voltage

Figure 5. Nominal Gain vs Calculated Gain

Figure 2. Maximum Gain Adjust Range vs Feedback Resistor

Figure 4. Gain Error Band vs Gain Control Voltage

Figure 6. Recommended R_F and R_G vs A_VMAX

7.7 Typical Characteristics: V_S = ±5 V, DC and Power-Supply Parameters

At T_A = +25°C, R_L = 100 Ω, V_G = +1 V, and V_IN = single-ended input on +V_IN with –V_IN at ground, unless otherwise noted.

Figure 7. Supply Current vs Control Voltage (A_VMAX = 6 dB)

Figure 9. Supply Current vs Control Voltage (A_VMAX = 40 dB)

Figure 8. Supply Current vs Control Voltage (A_VMAX = 20 dB)

Figure 10. Typical DC Drift vs Temperature

7.8 Typical Characteristics: V_S = ±5 V, A_VMAX = 6 dB

At T_A = +25°C, R_L = 100 Ω, R_F = 1.33 kΩ, R_G = 1.33 kΩ, V_G = +2 V, V_IN = single-ended input on +V_IN with –V_IN at ground, and SO-14 package, unless otherwise noted.

Figure 11. Small-Signal Frequency Response

Figure 13. Small-Signal Pulse Response

Figure 15. Video Differential Gain and Differential Phase

Figure 17. Harmonic Distortion vs Frequency

Figure 19. Harmonic Distortion vs Output Voltage

Figure 21. 2-Tone, 3rd-Order Intermodulation Intercept

Figure 23. Gain vs Gain Control Voltage

Figure 25. Gain Control Pulse Response

Figure 27. Group Delay vs Gain Control Voltage

Figure 29. Recommended R_S vs Capacitive Load

Figure 31. Output Voltage Noise Density

Figure 12. Large-Signal Frequency Response

Figure 14. Large-Signal Pulse Response

Figure 16. Gain Flatness, Deviation From Linear Phase

Figure 18. Harmonic Distortion vs Load Resistance

Figure 20. 20-MHz Harmonic Distortion vs Gain Control Voltage

Figure 22. 2-Tone, 3rd-Order Intermodulation Intercept vs Gain Control Voltage

Figure 24. Frequency Response

Figure 26. Fully-Attenuated Response

Figure 28. Group Delay vs Frequency

Figure 30. Frequency Response vs Capacitive Load

Figure 32. Input Current Noise Density

7.9 Typical Characteristics: V_S = ±5 V, A_VMAX = 20 dB

At T_A = +25°C, R_L = 100 Ω, R_F = 1 kΩ, R_G = 200 Ω, V_G = +2 V, and V_IN = single-ended input on +V_IN with –V_IN at ground, unless otherwise noted.

Figure 33. Small-Signal Pulse Response

Figure 35. Gain Flatness, Deviation From Linear Phase

Figure 37. Harmonic Distortion vs Frequency

Figure 39. Harmonic Distortion vs Output Voltage

Figure 41. 2-Tone, 3rd-Order Intermodulation Intercept (G_MAX = +10 V/V)

Figure 43. Gain vs Gain Control Voltage

Figure 45. Gain Control Pulse Response

Figure 47. Fully-Attenuated Response

Figure 49. Output Limited Overdrive Recovery

Figure 51. Group Delay vs Frequency

Figure 34. Large-Signal Pulse Response

Figure 36. Output Voltage Noise Density

Figure 38. Harmonic Distortion vs Load Resistance

VCA820 tc_20db_20m_dist-gctrl_bos395.gif

Figure 40. 20-MHz Harmonic Distortion vs Gain Control Voltage

Figure 42. 2-Tone, 3rd-Order Intermodulation Intercept vs Gain Control Voltage (f_IN = 20 MHz)

Figure 44. Gain Control Frequency Response

Figure 46. Output Voltage and Current Limitations

Figure 48. I_RG Limited Overdrive Recovery

Figure 50. Group Delay vs Gain Control Voltage

7.10 Typical Characteristics: V_S = ±5 V, A_VMAX = 40 dB

At T_A = +25°C, R_L = 100 Ω, R_F = 845 Ω, R_G = 16.9 Ω, V_G = +2 V, V_IN = single-ended input on +V_IN with –V_IN at ground, and SO-14 package, unless otherwise noted.