JAJSU55B March 2015 – April 2024 CSD18537NKCS
PRODUCTION DATA
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-Source Voltage | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Drain-to-Source Leakage Current | VGS = 0V, VDS = 48V | 1 | μA | |||
| IGSS | Gate-to-Source Leakage Current | VDS = 0V, VGS = 20V | 100 | nA | |||
| VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250μA | 2.6 | 3 | 3.5 | V | |
| RDS(on) | Drain-to-Source On-Resistance | VGS = 6V, ID = 25A | 14 | 18 | mΩ | ||
| VGS = 10V, ID = 25A | 11 | 14 | mΩ | ||||
| gƒs | Transconductance | VDS = 30V, ID = 25A | 100 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input Capacitance | VGS = 0V, VDS = 30V, ƒ = 1MHz | 1140 | 1480 | pF | ||
| Coss | Output Capacitance | 136 | 177 | pF | |||
| Crss | Reverse Transfer Capacitance | 4.0 | 5.2 | pF | |||
| RG | Series Gate Resistance | 5.5 | 11 | Ω | |||
| Qg | Gate Charge Total (10V) | VDS = 30V, ID = 25A | 14 | 18 | nC | ||
| Qgd | Gate Charge Gate-to-Drain | 2.3 | nC | ||||
| Qgs | Gate Charge Gate-to-Source | 5.2 | nC | ||||
| Qg(th) | Gate Charge at Vth | 3.3 | nC | ||||
| Qoss | Output Charge | VDS = 30V, VGS = 0V | 25 | nC | |||
| td(on) | Turn On Delay Time | VDS =
30V, VGS = 10V, IDS = 25A, RG = 0Ω | 4.5 | ns | |||
| tr | Rise Time | 3.2 | ns | ||||
| td(off) | Turn Off Delay Time | 12.6 | ns | ||||
| tƒ | Fall Time | 3.9 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode Forward Voltage | ISD = 25A, VGS = 0V | 0.9 | 1 | V | ||
| Qrr | Reverse Recovery Charge | VDS=
30V, IF = 25A, di/dt = 300A/μs | 77 | nC | |||
| trr | Reverse Recovery Time | 50 | ns | ||||