JAJSD87B August   2017  – February 2022 CSD22205L

PRODUCTION DATA  

  1. 1特長
  2. 2アプリケーション
  3. 3概要
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Trademarks
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 CSD22205L Package Dimensions
    2. 7.2 Land Pattern Recommendation
    3. 7.3 Stencil Recommendation

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • YMG|4
サーマルパッド・メカニカル・データ
発注情報

Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-source voltageVGS = 0 V, ID = –250 μA–8V
IDSSDrain-to-source leakage currentVGS = 0 V, VDS = –6.4 V–100nA
IGSSGate-to-source leakage currentVDS = 0 V, VGS = –6 V–100nA
VGS(th)Gate-to-source threshold voltageVDS = VGS, ID = –250 μA–0.4–0.7–1.05V
RDS(on)Drain-to-source on-resistanceVGS = –1.5 V, ID = –0.2 A30mΩ
VGS = –1.8 V, ID = –1 A2040
VGS = –2.5 V, ID = –1 A11.515.0
VGS = –4.5 V, ID = –1 A8.29.9
gfsTransconductanceVDS = –0.8 V, ID = –1 A10.4S
DYNAMIC CHARACTERISTICS
CISSInput capacitanceVGS = 0 V, VDS = –4 V, ƒ = 1 MHz10701390pF
COSSOutput capacitance560730pF
CRSSReverse transfer capacitance190250pF
RGSeries gate resistance30Ω
QgGate charge total (–4.5 V)VDS = –4 V, ID = –1 A6.58.5nC
QgdGate charge gate-to-drain1.0nC
QgsGate charge gate-to-source1.2nC
Qg(th)Gate charge at Vth0.7nC
QOSSOutput chargeVDS = –4 V, VGS = 0 V4.1nC
td(on)Turnon delay timeVDS = –4 V, VGS = –4.5 V,
ID = –1 A , RG = 0 Ω
30ns
trRise time14ns
td(off)Turnoff delay time70ns
tfFall time32ns
DIODE CHARACTERISTICS
VSDDiode forward voltageIS = –1 A, VGS = 0 V–0.68–1.0V
QrrReverse recovery chargeVDS= –4 V, IF = –1 A,
di/dt = 200 A/μs
16nC
trrReverse recovery time38ns