SLPS512A July   2014  – May 2017 CSD75208W1015

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 CSD75208W1015 Package Dimensions
    2. 7.2 Recommended PCB Land Pattern
    3. 7.3 Tape and Reel Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • YZC|6
サーマルパッド・メカニカル・データ
発注情報

Features

  • Dual P-Channel MOSFETs
  • Common Source Configuration
  • Small Footprint 1 mm × 1.5 mm
  • Gate-Source Voltage Clamp
  • Gate ESD Protection –3 kV
  • Pb Free
  • RoHS Compliant
  • Halogen Free

Applications

  • Battery Management
  • Load Switch
  • Battery Protection

Description

This device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

Top View

CSD75208W1015 p0099-01_lps214.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage –20 V
Qg Gate Charge Total (–4.5 V) 1.9 nC
Qgd Gate Charge Gate-to-Drain 0.23 nC
RDS(on) Drain-to-Source
On-Resistance
VGS = –1.8 V 100
VGS = –2.5 V 70
VGS = –4.5 V 56
RD1D2(on) Drain-to-Drain
On-Resistance
VGS = –1.8 V 190
VGS = –2.5 V 120
VGS = –4.5 V 90
VGS(th) Threshold Voltage –0.8 V

Ordering Information(1)

Device Qty Media Package Ship
CSD75208W1015 3000 7-Inch Reel 1.0 mm × 1.5 mm Wafer Level Package Tape and Reel
CSD75208W1015T 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage –20 V
VGS Gate-to-Source Voltage –6 V
ID1D2 Continuous Drain-to-Drain Current,
TC = 25°C
–1.6 A
Pulsed Drain-to-Drain Current,
TC = 25°C(1)
–22 A
IS Continuous Source Pin Current –3 A
Pulsed Source Pin Current(1) (2) –39 A
IG Continuous Gate Clamp Current –0.5 A
Pulsed Gate Clamp Current(1) –7 A
PD Power Dissipation 0.75 W
TJ,
Tstg
Operating Junction and
Storage Temperature Range
–55 to 150 °C
  1. Max RθJA = 165ºC/W, pulse duration ≤100 μs, duty cycle ≤1%
  2. Both devices in parallel

RD1D2(on) vs VGS

CSD75208W1015 graph07_draintodrain_SLPS512.png

RDS(on) vs VGS

CSD75208W1015 graph07_draintosource_SLPS512.png