JAJSOE9B april   2019  – march 2023 DLP470TE

PRODUCTION DATA  

  1. 特長
  2. アプリケーション
  3. 概要
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  Storage Conditions
    3. 6.3  ESD Ratings
    4. 6.4  Recommended Operating Conditions
    5. 6.5  Thermal Information
    6. 6.6  Electrical Characteristics
    7. 6.7  Capacitance at Recommended Operating Conditions
    8. 6.8  Timing Requirements
      1. 6.8.1 Timing Diagrams
    9. 6.9  System Mounting Interface Loads
    10. 6.10 Micromirror Array Physical Characteristics
    11. 6.11 Micromirror Array Optical Characteristics
    12. 6.12 Window Characteristics
    13. 6.13 Chipset Component Usage Specification
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Interface
      2. 7.3.2 Timing
    4. 7.4 Device Functional Modes
    5. 7.5 Optical Interface and System Image Quality Considerations
      1. 7.5.1 Numerical Aperture and Stray Light Control
      2. 7.5.2 Pupil Match
      3. 7.5.3 Illumination Overfill
    6. 7.6 Micromirror Array Temperature Calculation
    7. 7.7 Micromirror Landed-On/Landed-Off Duty Cycle
      1. 7.7.1 Definition of Micromirror Landed-On/Landed-Off Duty Cycle
      2. 7.7.2 Landed Duty Cycle and Useful Life of the DMD
      3. 7.7.3 Landed Duty Cycle and Operational DMD Temperature
      4. 7.7.4 Estimating the Long-Term Average Landed Duty Cycle of a Product or Application
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 DMD Die Temperature Sensing
  9. Power Supply Recommendations
    1. 9.1 DMD Power Supply Power-Up Procedure
    2. 9.2 DMD Power Supply Power-Down Procedure
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
      1. 10.2.1 Layers
      2. 10.2.2 Impedance Requirements
      3. 10.2.3 Trace Width, Spacing
        1. 10.2.3.1 Voltage Signals
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Device Nomenclature
      2. 11.1.2 Device Markings
    2. 11.2 サード・パーティ製品に関する免責事項
    3. 11.3 Documentation Support
      1. 11.3.1 Related Documentation
      2. 11.3.2 サポート・リソース
      3. 11.3.3 Receiving Notification of Documentation Updates
    4. 11.4 Trademarks
    5. 11.5 静電気放電に関する注意事項
    6. 11.6 用語集
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted). The functional performance of the device specified in this data sheet is achieved when operating the device within the limits defined by this table. No level of performance is implied when operating the device above or below these limits.

MIN NOM MAX UNIT
VOLTAGE SUPPLY
VCC LVCMOS logic supply voltage(1) 1.65 1.8 1.95 V
VOFFSET Mirror electrode and HVCMOS voltage(1)(2) 9.5 10 10.5 V
VBIAS Mirror electrode voltage(1) 17.5 18 18.5 V
VRESET Mirror electrode voltage(1) –14.5 –14 –13.5 V
|VBIAS – VOFFSET| Supply voltage difference (absolute value)(3) 10.5 V
|VBIAS – VRESET| Supply voltage difference (absolute value)(4) 33 V
LVCMOS INTERFACE
VIH(DC) DC input high voltage(5) 0.7 × VCC VCC + 0.3 V
VIL(DC) DC input low voltage(5) –0.3 0.3 × VCC V
VIH(AC) AC input high voltage(5) 0.8 × VCC VCC + 0.3 V
VIL(AC) AC input low voltage(5) –0.3 0.2 × VCC V
tPWRDNZ PWRDNZ pulse duration(6) 10 ns
SCP INTERFACE
ƒSCPCLK SCP clock frequency(7) 500 kHz
tSCP_PD Propagation delay, clock to Q, from rising-edge of SCPCLK to valid SCPDO(8) 0 900 ns
tSCP_NEG_ENZ Time between falling-edge of SCPENZ and the first rising-edge of SCPCLK 1 µs
tSCP_POS_ENZ Time between falling-edge of SCPCLK and the rising-edge of SCPENZ 1 µs
tSCP_DS SCPDI clock setup time (before SCPCLK falling edge)(8) 800 ns
tSCP_DH SCPDI hold time (after SCPCLK falling edge)(8) 900 ns
tSCP_PW_ENZ SCPENZ inactive pulse duration (high level) 2 µs
ƒCLOCK Clock frequency for LVDS interface (all channels), DCLK(9) 400 MHz
|VID| Input differential voltage (absolute value)(10) 150 300 440 mV
VCM Common mode voltage(10) 1100 1200 1300 mV
VLVDS LVDS voltage(10) 880 1520 mV
tLVDS_RSTZ Time required for LVDS receivers to recover from PWRDNZ 2000 ns
ZIN Internal differential termination resistance 80 100 120 Ω
ZLINE Line differential impedance (PWB/trace) 90 100 110 Ω
ENVIRONMENTAL
TARRAY Array temperature, long-term operational(11)(12)(13)(23) 10 40 to 70(23) °C
Array temperature, short-term operational(12)(15) 0 10 °C
TWINDOW Window temperature – operational(16)(17) 85 °C
|TDELTA| Absolute temperature delta between any point on the window edge and the ceramic test point TP1(18)(19) 14 °C
TDP-AVG Average dew point temperature (non–condensing)(20) 28 °C
TDP-ELR Elevated dew point temperature range (non-condensing)(21) 28 36 °C
CTELR Cumulative time in elevated dew point temperature range 24 months
MIN NOM MAX UNIT
VOLTAGE SUPPLY
VCC LVCMOS logic supply voltage(1) 1.65 1.8 1.95 V
VOFFSET Mirror electrode and HVCMOS voltage(1)(2) 9.5 10 10.5 V
VBIAS Mirror electrode voltage(1) 17.5 18 18.5 V
VRESET Mirror electrode voltage(1) –14.5 –14 –13.5 V
|VBIAS – VOFFSET| Supply voltage difference (absolute value)(3) 10.5 V
|VBIAS – VRESET| Supply voltage difference (absolute value)(4) 33 V
LVCMOS INTERFACE
VIH(DC) DC input high voltage(5) 0.7 × VCC VCC + 0.3 V
VIL(DC) DC input low voltage(5) –0.3 0.3 × VCC V
VIH(AC) AC input high voltage(5) 0.8 × VCC VCC + 0.3 V
VIL(AC) AC input low voltage(5) –0.3 0.2 × VCC V
tPWRDNZ PWRDNZ pulse duration(6) 10 ns
SCP INTERFACE
ƒSCPCLK SCP clock frequency(7) 500 kHz
tSCP_PD Propagation delay, Clock to Q, from rising–edge of SCPCLK to valid SCPDO(8) 0 900 ns
tSCP_NEG_ENZ Time between falling-edge of SCPENZ and the first rising- edge of SCPCLK 1 µs
tSCP_POS_ENZ Time between falling-edge of SCPCLK and the rising-edge of SCPENZ 1 µs
tSCP_DS SCPDI Clock setup time (before SCPCLK falling edge)(8) 800 ns
tSCP_DH SCPDI Hold time (after SCPCLK falling edge)(8) 900 ns
tSCP_PW_ENZ SCPENZ inactive pulse duration (high level) 2 µs
LVDS INTERFACE
ƒCLOCK Clock frequency for LVDS interface (all channels), DCLK(10) 400 MHz
|VID| Input differential voltage (absolute value)(11) 150 300 440 mV
VCM Common mode voltage(11) 1100 1200 1300 mV
VLVDS LVDS voltage(11) 880 1520 mV
tLVDS_RSTZ Time required for LVDS receivers to recover from PWRDNZ 2000 ns
ZIN Internal differential termination resistance 80 100 120 Ω
ZLINE Line differential impedance (PWB/trace) 90 100 110 Ω
ENVIRONMENTAL
TARRAY Array temperature, long–term operational(13)(14)(16) 10 40 to 70(15) °C
Array temperature, short–term operational(14)(17) 0 10 °C
TWINDOW Window temperature – operational(21)(23) 85 °C
|TDELTA| Absolute temperature delta between any point on the window edge and the ceramic test point TP1(18)(19) 14 °C
TDP -AVG Average dew point temperature (non-condensing)(20) 28 °C
TDP-ELR Elevated dew point temperature range (non-condensing)(22) 28 36 °C
CTELR Cumulative time in elevated dew point temperature range 24 Months

ILLUMINATION (Lamp)

L Operating system luminance(19) 4000 lm
ILLUV Illumination wavelengths < 395 nm(13) 0.68 2.00 mW/cm2
ILLVIS Illumination wavelengths between 395 nm and 800 nm Thermally limited mW/cm2
ILLIR Illumination wavelengths > 800 nm 10 mW/cm2
ILLθ Illumination marginal ray angle(23) 55 deg
ILLUMINATION (Solid State)
L Operating system luminance(19)

5500

lm
ILLUV Illumination wavelengths < 436 nm(13)

0.45

mW/cm2
ILLVIS Illumination wavelengths between 436 nm and 800 nm

Thermally Limited

mW/cm2
ILLIR Illumination wavelengths > 800 nm

10

mW/cm2
ILLθ Illumination marginal ray angle(23)

55

deg
All voltages are referenced to common ground VSS. VBIAS, VCC, VOFFSET, and VRESET power supplies are all required for proper DMD operation. VSS must also be connected.
VOFFSET supply transients must fall within specified max voltages.
To prevent excess current, the supply voltage difference |VBIAS – VOFFSET| must be less than the specified limit. See Power Supply Recommendations, Figure 9-1, and Table 9-1.
To prevent excess current, the supply voltage difference |VBIAS – VRESET| must be less than the specified limit. See Power Supply Recommendations, Figure 9-1, and Table 9-1.
Low-speed interface is LPSDR and adheres to the Electrical Characteristics and AC/DC Operating Conditions table in JEDEC Standard No. 209B, "Low-Power Double Data Rate (LPDDR)" JESD209B. Tester conditions for VIH and VIL.
  • Frequency = 60 MHz. Maximum rise time = 2.5 ns at 20/80
  • Frequency = 60 MHz. Maximum fall time = 2.5 ns at 80/20
PWRDNZ input pin resets the SCP and disables the LVDS receivers. PWRDNZ input pin overrides SCPENZ input pin and tristates the SCPDO output pin.
The SCP clock is a gated clock. Duty cycle must be 50% ± 10%. SCP parameter is related to the frequency of DCLK.
See Figure 6-2.
See LVDS timing requirements in Timing Requirements.
See LVDS waveform requirements in the specifications.
Simultaneous exposure of the DMD to the maximum Recommended Operating Conditions for temperature and UV illumination reduces device lifetime.
The array temperature cannot be measured directly and must be computed analytically from the temperature measured at test point 1 (TP1) shown in Figure 7-1 and the package thermal resistance (Thermal Information) using the Micromirror Array Temperature Calculation.
Long-term is defined as the usable life of the device.
CP internal oscillator is specified to operate all SCP registers. For all SCP operations, DCLK is required.
Array temperatures beyond those specified as long-term are recommended for short-term conditions only (power-up). Short-term is defined as the cumulative time over the usable life of the device and is less than 500 hours.
The locations of thermal test points TP2, TP3, TP4, and TP5 in Figure 10 are intended to measure the highest window edge temperature. For most applications, the locations shown are representative of the highest window edge temperature. If a particular application causes additional points on the window edge to be at a higher temperature, use that location.
The maximum marginal ray angle of the incoming illumination light at any point in the micromirror array, including the pond of micromirrors (POM), cannot exceed 55 degrees from the normal to the device array plane. The device window aperture has not necessarily been designed to allow incoming light at higher maximum angles to pass to the micromirrors, and the device performance has not been tested nor qualified at angles exceeding this. Illumination light exceeding this angle outside the micromirror array (including POM) will contribute to thermal limitations described in this document, and may negatively affect lifetime.
Temperature delta is the highest difference between the ceramic test point 1 (TP1) and anywhere on the window edge as shown in Figure 7-1. The window test points TP2, TP3, TP4, and TP5 shown in Figure 7-1 are intended to result in the worst case delta temperature. If a particular application causes another point on the window edge to result in a larger delta in temperature, that point needs to be used.
DMD is qualified at the combination of the maximum temperature and maximum lumens specified. Operation of the DMD outside of these limits has not been tested.
The average over time (including storage and operating) that the device is not in the elevated dew point temperature range.
Limit exposure to dew point temperatures in the elevated range during storage and operation to less than a total cumulative time of CTELR.
Supported for video applications only
Per the Maximum Recommended Array Temperature - Derating Curve, the maximum operational array temperature is derated based on the micromirror landed duty cycle that the DMD experiences in the end application. See Micromirror Landed-On/Landed-Off Duty Cycle for a definition of micromirror landed duty cycle.
GUID-C9A96861-97DB-429F-B2FC-6E6C4DF8C76D-low.gif Figure 6-1 Maximum Recommended Array Temperature - Derating Curve