JAJSRZ6 データシート

JAJSRZ6 November 2023 ESD852 , ESD862

PRODUCTION DATA

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5.6 Electrical Characteristics

over T_A = 25°C (unless otherwise noted)⁽¹⁾

PARAMETER		TEST CONDITIONS	DEVICE	MIN	TYP	MAX	UNIT
V_RWM	Reverse stand-off voltage			–36		36	V
V_BRF	Forward breakdown voltage⁽¹⁾⁽²⁾	I_IO = 10 mA, IO to GND		37.8	40	44.2	V
V_BRR	Reverse breakdown voltage ⁽¹⁾⁽²⁾	I_IO = –10 mA, IO to GND		–44.2	-40	–37.8	V
V_CLAMP	Clamping voltage⁽³⁾	I_PP = 1 A, t_p = 8/20 µs, IO to GND	ESD852		43		V
		I_PP = 4.3 A, t_p = 8/20 µs, from IO to GND	ESD852		61		V
		I_PP = 1 A, t_p = 8/20 µs, from IO to GND	ESD862		47		V
		I_PP = 3.1 A, t_p = 8/20 µs, from IO to GND	ESD862		61		V
V_CLAMP	Clamping voltage⁽³⁾	IPP = 16 A, TLP, IO to GND or GND to IO	ESD852		63		V
V_CLAMP	Clamping voltage⁽³⁾	IPP = 16 A, TLP, IO to GND or GND to IO	ESD862		64		V
I_LEAK	Leakage current	V_IO = ±36 V, IO to GND			5	50	nA
R_DYN	Dynamic resistance⁽⁴⁾	IO to GND and GND to IO	ESD852		0.49		Ω
R_DYN	Dynamic resistance⁽⁴⁾	IO to GND and GND to IO	ESD862		0.49		Ω
C_L	Line capacitance⁽¹⁾	V_IO = 0 V, f = 1 MHz, V_pp = 30 mV	ESD852		2.8	3.5	pF
C_L	Line capacitance⁽¹⁾	V_IO = 0 V, f = 1 MHz, V_pp = 30 mV	ESD862		2.6	2.9	pF

(1) Measured from IO to GND on each channel.

(2) V_BRF and V_BRR are defined as the voltage when ± 10 mA is applied in the positive or negative direction respectively.

(3) Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.

(4) Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008