SNOSC68C April   2012  – September 2015 LM3533

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 I2C Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Control Bank Mapping
        1. 7.3.1.1 High-Voltage Control Banks (A/B)
        2. 7.3.1.2 Low-Voltage Control Banks (C, D, E, And F)
      2. 7.3.2 Pattern Generator
      3. 7.3.3 Ambient Light Sensor Interface
      4. 7.3.4 PWM Input
      5. 7.3.5 HWEN Input
      6. 7.3.6 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1  High-Voltage Boost Converter
        1. 7.4.1.1 High-Voltage Current Sinks (HVLED1 And HVLED2)
        2. 7.4.1.2 High-Voltage Current String Biasing
        3. 7.4.1.3 Boost Switching-Frequency Select
      2. 7.4.2  Integrated Charge Pump
        1. 7.4.2.1 Charge Pump Disabled
        2. 7.4.2.2 Automatic Gain
        3. 7.4.2.3 Automatic Gain (Flying Capacitor Detection)
        4. 7.4.2.4 1× Gain
        5. 7.4.2.5 2× Gain
        6. 7.4.2.6 Low-Voltage Current Sinks (LVLED1 to LVLED5)
        7. 7.4.2.7 Low-Voltage LED Biasing
      3. 7.4.3  LED Current Mapping Modes
        1. 7.4.3.1 Exponential Mapping
        2. 7.4.3.2 Linear Mapping
      4. 7.4.4  LED Current Ramping
        1. 7.4.4.1 Start-Up/Shutdown Ramp
        2. 7.4.4.2 Run-Time Ramp
      5. 7.4.5  Brightness Register Current Control
      6. 7.4.6  PWM Control
        1. 7.4.6.1 PWM Input Frequency Range
        2. 7.4.6.2 PWM Input Polarity
      7. 7.4.7  ALS Current Control
        1. 7.4.7.1 ALS Brightness Zones (Zone Boundaries)
        2. 7.4.7.2 Zone Boundary Hysteresis
        3. 7.4.7.3 Zone Target Registers (ALSM1, ALSM2, ALSM3)
        4. 7.4.7.4 PWM Input in ALS Mode
      8. 7.4.8  ALS Functional Blocks
        1. 7.4.8.1  ALS Input
        2. 7.4.8.2  Analog Output Ambient Light Sensors (ALS Gain Setting Resistors)
        3. 7.4.8.3  PWM Output Ambient Light Sensors (Internal Filtering)
        4. 7.4.8.4  Internal 8-Bit ADC
        5. 7.4.8.5  ALS Averager
        6. 7.4.8.6  Initializing the ALS
        7. 7.4.8.7  ALS Algorithms
        8. 7.4.8.8  ALS Rules
        9. 7.4.8.9  Direct ALS Control
        10. 7.4.8.10 Up-Only Control
        11. 7.4.8.11 Down-Delay Control
      9. 7.4.9  Pattern Generator
        1. 7.4.9.1 Delay Time
        2. 7.4.9.2 Rise Time
        3. 7.4.9.3 Fall Time
        4. 7.4.9.4 High Period
        5. 7.4.9.5 Low Period
        6. 7.4.9.6 Low-Level Brightness
        7. 7.4.9.7 High-Level Brightness
        8. 7.4.9.8 ALS Controlled Pattern Current
        9. 7.4.9.9 Interrupt Output Mode
      10. 7.4.10 Fault Flags/Protection Features
        1. 7.4.10.1 Open LED String (HVLED)
        2. 7.4.10.2 Shorted LED String (HVLED)
        3. 7.4.10.3 Open LED (LVLED)
        4. 7.4.10.4 Shorted LED (LVLED)
        5. 7.4.10.5 Overvoltage Protection (Inductive Boost)
        6. 7.4.10.6 Current Limit (Inductive Boost)
        7. 7.4.10.7 Current Limit (Charge Pump)
    5. 7.5 Programming
      1. 7.5.1 I2C-Compatible Interface
        1. 7.5.1.1 Start and Stop Conditions
        2. 7.5.1.2 I2C-Compatible Address
        3. 7.5.1.3 Transferring Data
    6. 7.6 Register Maps
      1. 7.6.1 LM3533 Register Descriptions
        1. 7.6.1.1 Pattern Generator Registers
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Boost Converter Maximum Output Power (Boost)
        2. 8.2.2.2 Peak Current Limited
        3. 8.2.2.3 Output Voltage Limited
        4. 8.2.2.4 Maximum Output Power (Charge Pump)
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Boost
        1. 10.1.1.1 Boost Output Capacitor Selection and Placement
        2. 10.1.1.2 Schottky Diode Placement
        3. 10.1.1.3 Inductor Placement
        4. 10.1.1.4 Boost Input Capacitor Selection and Placement
      2. 10.1.2 Charge Pump
        1. 10.1.2.1 Flying Capacitor (CP)
        2. 10.1.2.2 Output Capacitor (CPOUT)
        3. 10.1.2.3 Charge Pump Input Capacitor Placement
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Related Documentation
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

11 Device and Documentation Support

11.1 Device Support

11.1.1 Third-Party Products Disclaimer

TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.

11.2 Related Documentation

For additional information, see the following:

TI Application Note AN-1112 DSBGA Wafer Level Chip Scale Package (SNVA009).

11.3 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

11.4 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.5 Electrostatic Discharge Caution

esds-image

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

11.6 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.