SNVSAD9 April   2016 LM5175-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Simplified Schematic
  5. 5 Revision History
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Fixed Frequency Valley/Peak Current Mode Control with Slope Compensation
      2. 8.3.2  VCC Regulator and Optional BIAS Input
      3. 8.3.3  Enable/UVLO
      4. 8.3.4  Soft-Start
      5. 8.3.5  Overcurrent Protection
      6. 8.3.6  Average Input/Output Current Limiting
      7. 8.3.7  CCM/DCM Operation
      8. 8.3.8  Frequency and Synchronization (RT/SYNC)
      9. 8.3.9  Frequency Dithering
      10. 8.3.10 Output Overvoltage Protection (OVP)
      11. 8.3.11 Power Good (PGOOD)
      12. 8.3.12 Gm Error Amplifier
      13. 8.3.13 Integrated Gate Drivers
      14. 8.3.14 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown, Standby, and Operating Modes
      2. 8.4.2 MODE Pin Configuration
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Frequency
        2. 9.2.2.2  VOUT
        3. 9.2.2.3  Inductor Selection
        4. 9.2.2.4  Output Capacitor
        5. 9.2.2.5  Input Capacitor
        6. 9.2.2.6  Sense Resistor (RSENSE)
        7. 9.2.2.7  Slope Compensation
        8. 9.2.2.8  UVLO
        9. 9.2.2.9  Soft-Start Capacitor
        10. 9.2.2.10 Dither Capacitor
        11. 9.2.2.11 MOSFETs QH1 and QL1
        12. 9.2.2.12 MOSFETs QH2 and QL2
        13. 9.2.2.13 Frequency Compensation
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Package Option Addendum
      1. 13.1.1 Packaging Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

12 Device and Documentation Support

12.1 Documentation Support

12.1.1 Related Documentation

Please visit TI homepage for latest technical document including application notes, user guides, and reference designs.

IC Package Thermal Metrics application report, SPRA953.

12.2 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

12.3 Trademarks

PowerPAD, E2E are trademarks of Texas Instruments.

Webench is a registered trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

12.4 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

12.5 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.