SLAS892C March   2013  – September 2014 MSP430G2444 , MSP430G2544 , MSP430G2744

PRODUCTION DATA.  

  1. 1Device Overview
    1. 1.1 Features
    2. 1.2 Applications
    3. 1.3 Description
    4. 1.4 Functional Block Diagram
  2. 2Revision History
  3. 3Device Comparison
  4. 4Terminal Configuration and Functions
    1. 4.1 Pin Diagrams
    2. 4.2 Signal Descriptions
  5. 5Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  Handling Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Active Mode Supply Current (Into DVCC + AVCC) Excluding External Current
    5. 5.5  Typical Characteristics - Active-Mode Supply Current (Into DVCC + AVCC)
    6. 5.6  Low-Power-Mode Supply Currents (Into VCC ) Excluding External Current
    7. 5.7  Schmitt-Trigger Inputs (Ports P1, P2, P3, P4, and RST/NMI)
    8. 5.8  Leakage Current, Ports Px
    9. 5.9  Outputs, Ports Px
    10. 5.10 Output Frequency, Ports Px
    11. 5.11 Typical Characteristics - Outputs
    12. 5.12 POR and BOR
    13. 5.13 Typical Characteristics - POR and BOR
    14. 5.14 DCO Frequency
    15. 5.15 Calibrated DCO Frequencies, Tolerance
    16. 5.16 Wake-Up From Lower-Power Modes (LPM3, LPM4)
    17. 5.17 Typical Characteristics - DCO Clock Wake-Up Time From LPM3 or LPM4
    18. 5.18 DCO With External Resistor ROSC
    19. 5.19 Typical Characteristics - DCO With External Resistor ROSC
    20. 5.20 Crystal Oscillator LFXT1, Low-Frequency Mode
    21. 5.21 Internal Very-Low-Power Low-Frequency Oscillator (VLO)
    22. 5.22 Crystal Oscillator LFXT1, High-Frequency Mode
    23. 5.23 Typical Characteristics - LFXT1 Oscillator in HF Mode (XTS = 1)
    24. 5.24 Timer_A, Timer_B
    25. 5.25 USCI (UART Mode)
    26. 5.26 USCI (SPI Master Mode)
    27. 5.27 USCI (SPI Slave Mode)
    28. 5.28 USCI (I2C Mode)
    29. 5.29 10-Bit ADC, Power Supply and Input Range Conditions
    30. 5.30 10-Bit ADC, Built-In Voltage Reference
    31. 5.31 10-Bit ADC, External Reference
    32. 5.32 10-Bit ADC, Timing Parameters
    33. 5.33 10-Bit ADC, Linearity Parameters
    34. 5.34 10-Bit ADC, Temperature Sensor and Built-In VMID
    35. 5.35 Flash Memory
    36. 5.36 RAM
    37. 5.37 JTAG and Spy-Bi-Wire Interface
    38. 5.38 JTAG Fuse
  6. 6Detailed Description
    1. 6.1  CPU
    2. 6.2  Instruction Set
    3. 6.3  Operating Modes
    4. 6.4  Interrupt Vector Addresses
    5. 6.5  Special Function Registers
      1. 6.5.1 Interrupt Enable 1
      2. 6.5.2 Interrupt Enable 2
      3. 6.5.3 Interrupt Flag Register 1
      4. 6.5.4 Interrupt Flag Register 2
    6. 6.6  Memory Organization
    7. 6.7  Bootstrap Loader (BSL)
    8. 6.8  Flash Memory
    9. 6.9  Peripherals
    10. 6.10 Oscillator and System Clock
    11. 6.11 Brownout
    12. 6.12 Digital I/O
    13. 6.13 Watchdog Timer (WDT+)
    14. 6.14 Timer_A3
    15. 6.15 Timer_B3
    16. 6.16 Universal Serial Communications Interface (USCI)
    17. 6.17 ADC10
    18. 6.18 Peripheral File Map
    19. 6.19 Port Schematics
      1. 6.19.1  Port P1 Pin Schematic: P1.0 to P1.3, Input/Output With Schmitt Trigger
      2. 6.19.2  Port P1 Pin Schematic: P1.4 to P1.6, Input/Output With Schmitt Trigger and In-System Access Features
      3. 6.19.3  Port P1 Pin Schematic: P1.7, Input/Output With Schmitt Trigger and In-System Access Features
      4. 6.19.4  Port P2 Pin Schematic: P2.0, P2.2, Input/Output With Schmitt Trigger
      5. 6.19.5  Port P2 Pin Schematic: P2.1, Input/Output With Schmitt Trigger
      6. 6.19.6  Port P2 Pin Schematic: P2.3, Input/Output With Schmitt Trigger
      7. 6.19.7  Port P2 Pin Schematic: P2.4, Input/Output With Schmitt Trigger
      8. 6.19.8  Port P2 Pin Schematic: P2.5, Input/Output With Schmitt Trigger and External ROSC for DCO
      9. 6.19.9  Port P2 Pin Schematic: P2.6, Input/Output With Schmitt Trigger and Crystal Oscillator Input
      10. 6.19.10 Port P2 Pin Schematic: P2.7, Input/Output With Schmitt Trigger and Crystal Oscillator Output
      11. 6.19.11 Port P3 Pin Schematic: P3.0, Input/Output With Schmitt Trigger
      12. 6.19.12 Port P3 Pin Schematic: P3.1 to P3.5, Input/Output With Schmitt Trigger
      13. 6.19.13 Port P3 Pin Schematic: P3.6 to P3.7, Input/Output With Schmitt Trigger
      14. 6.19.14 Port P4 Pin Schematic: P4.0 to P4.2, Input/Output With Schmitt Trigger
      15. 6.19.15 Port P4 Pin Schematic: P4.3 to P4.4, Input/Output With Schmitt Trigger
      16. 6.19.16 Port P4 Pin Schematic: P4.5, Input/Output With Schmitt Trigger
      17. 6.19.17 Port P4 Pin Schematic: P4.6, Input/Output With Schmitt Trigger
      18. 6.19.18 Port P4 Pin Schematic: P4.7, Input/Output With Schmitt Trigger
      19. 6.19.19 JTAG Fuse Check Mode
  7. 7Device and Documentation Support
    1. 7.1 Device Support
      1. 7.1.1 Getting Started
      2. 7.1.2 Development Tools Support
        1. 7.1.2.1 Hardware Features
        2. 7.1.2.2 Recommended Hardware Options
          1. 7.1.2.2.1 Target Socket Boards
          2. 7.1.2.2.2 Experimenter Boards
          3. 7.1.2.2.3 Debugging and Programming Tools
          4. 7.1.2.2.4 Production Programmers
        3. 7.1.2.3 Recommended Software Options
          1. 7.1.2.3.1 Integrated Development Environments
          2. 7.1.2.3.2 MSP430Ware
          3. 7.1.2.3.3 Command-Line Programmer
      3. 7.1.3 Device and Development Tool Nomenclature
    2. 7.2 Documentation Support
    3. 7.3 Related Links
    4. 7.4 Community Resources
    5. 7.5 Trademarks
    6. 7.6 Electrostatic Discharge Caution
    7. 7.7 Glossary
  8. 8Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

5 Specifications

5.1 Absolute Maximum Ratings(1)(2)

MIN MAX UNIT
Voltage applied at VCC -0.3 4.1 V
Voltage applied to any pin(3) -0.3 VCC + 0.3 V
Diode current at any device terminal ±2 mA
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages referenced to VSS.
(3) The JTAG fuse-blow voltage, VFB, is allowed to exceed the absolute maximum rating. The voltage is applied to the TEST pin when blowing the JTAG fuse.

5.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature (programmed or unprogrammed device)(1) -55 150 °C
(1) Higher temperature may be applied during board soldering process according to the current JEDEC J-STD-020 specification with peak reflow temperatures not higher than classified on the device label on the shipping boxes or reels.

5.3 Recommended Operating Conditions(1)(2)

Typical values are specified at VCC = 3.3 V and TA = 25°C (unless otherwise noted)
MIN NOM MAX UNIT
VCC Supply voltage AVCC = DVCC = VCC During program execution 1.8 3.6 V
During program and erase of flash memory 2.2 3.6 V
VSS Supply voltage AVSS = DVSS = VSS 0 V
TA Operating free-air temperature -40 85 °C
fSYSTEM Processor frequency
(maximum MCLK frequency)(1)(2)
(see Figure 5-1)
VCC = 1.8 V, Duty cycle = 50% ±10% dc 4.15 MHz
VCC = 2.7 V, Duty cycle = 50% ±10% dc 12
VCC  ≥ 3.3 V, Duty cycle = 50% ±10% dc 16
(1) The MSP430 CPU is clocked directly with MCLK. Both the high and low phase of MCLK must not exceed the pulse width of the specified maximum frequency.
(2) Modules might have a different maximum input clock specification. See the specification of the respective module in this data sheet.
operating_area_slas892.gif
A. Minimum processor frequency is defined by system clock. Flash program or erase operations require a minimum VCC of 2.2 V.
Figure 5-1 Operating Area

5.4 Active Mode Supply Current (Into DVCC + AVCC) Excluding External Current(1)(2)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNIT
IAM,1MHz Active mode (AM) current (1 MHz) fDCO = fMCLK = fSMCLK = 1 MHz,
fACLK = 32768 Hz,
Program executes in flash,
BCSCTL1 = CALBC1_1MHZ,
DCOCTL = CALDCO_1MHZ,
CPUOFF = 0, SCG0 = 0, SCG1 = 0,
OSCOFF = 0
2.2 V 270 µA
3 V 390 550
(1) All inputs are tied to 0 V or VCC . Outputs do not source or sink any current.
(2) The currents are characterized with a Micro Crystal CC4V-T1A SMD crystal with a load capacitance of 9 pF. The internal and external load capacitance is chosen to closely match the required 9 pF.

5.5 Typical Characteristics - Active-Mode Supply Current (Into DVCC + AVCC)

g_iam_vcc_slas892.gif
TA = 25°C
Figure 5-2 Active-mode Current vs Supply Voltage
g_iam_fdco_slas892.gif
Figure 5-3 Active-Mode Current vs DCO Frequency

5.6 Low-Power-Mode Supply Currents (Into VCC ) Excluding External Current(1)(2)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNIT
ILPM0,1MHz Low-power mode 0 (LPM0) current(3) fMCLK = 0 MHz,
fSMCLK = fDCO = 1 MHz,
fACLK = 32768 Hz,
BCSCTL1 = CALBC1_1MHZ,
DCOCTL = CALDCO_1MHZ,
CPUOFF = 1, SCG0 = 0,
SCG1 = 0, OSCOFF = 0
25°C 2.2 V 75 90 µA
ILPM2 Low-power mode 2 (LPM2) current(4) fMCLK = fSMCLK = 0 MHz,
fDCO = 1 MHz,
fACLK = 32768 Hz,
BCSCTL1 = CALBC1_1MHZ,
DCOCTL = CALDCO_1MHZ,
CPUOFF = 1, SCG0 = 0,
SCG1 = 1, OSCOFF = 0
25°C 2.2 V 22 µA
ILPM3,LFXT1 Low-power mode 3 (LPM3) current(4) fDCO = fMCLK = fSMCLK = 0 MHz,
fACLK = 32768 Hz,
CPUOFF = 1, SCG0 = 1,
SCG1 = 1, OSCOFF = 0
25°C 2.2 V 1 2 µA
ILPM3,VLO Low-power mode 3 current, (LPM3)(4) fDCO = fMCLK = fSMCLK = 0 MHz,
fACLK from internal LF oscillator (VLO),
CPUOFF = 1, SCG0 = 1,
SCG1 = 1, OSCOFF = 0
25°C 2.2 V 0.5 1 µA
ILPM4 Low-power mode 4 (LPM4) current(5) fDCO = fMCLK = fSMCLK = 0 MHz,
fACLK = 0 Hz,
CPUOFF = 1, SCG0 = 1,
SCG1 = 1, OSCOFF = 1
25°C 2.2 V 0.1 0.5 µA
85°C 1.5 3
(1) All inputs are tied to 0 V or VCC . Outputs do not source or sink any current.
(2) The currents are characterized with a Micro Crystal CC4V-T1A SMD crystal with a load capacitance of 9 pF. The internal and external load capacitance is chosen to closely match the required 9 pF.
(3) Current for brownout and WDT clocked by SMCLK included.
(4) Current for brownout and WDT clocked by ACLK included.
(5) Current for brownout included.

5.7 Schmitt-Trigger Inputs (Ports P1, P2, P3, P4, and RST/NMI)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
VIT+ Positive-going input threshold voltage 0.45 VCC 0.75 VCC V
3 V 1.35 2.25
VIT- Negative-going input threshold voltage 0.25 VCC 0.55 VCC V
3 V 0.75 1.65
Vhys Input voltage hysteresis (VIT+  - VIT- ) 3 V 0.3 1 V
RPull Pullup or pulldown resistor For pullup: VIN = VSS,
For pulldown: VIN = VCC
3 V 20 35 50
CI Input capacitance VIN = VSS or VCC 5 pF

5.8 Leakage Current, Ports Px

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
Ilkg(Px.y) High-impedance leakage current  (1)(2) 3 V ±50 nA
(1) The leakage current is measured with VSS or VCC applied to the corresponding pin(s), unless otherwise noted.
(2) The leakage of the digital port pins is measured individually. The port pin is selected for input and the pullup or pulldown resistor is disabled.

5.9 Outputs, Ports Px

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
VOH High-level output voltage IOH(max) = -6 mA (1) 3 V VCC - 0.3 V
VOL Low-level output voltage IOL(max) = 6 mA(1) 3 V VSS + 0.3 V
(1) The maximum total current, IOH(max) and IOL(max), for all outputs combined, should not exceed ±48 mA to hold the maximum voltage drop specified.

5.10 Output Frequency, Ports Px

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
fPx.y Port output frequency (with load) Px.y, CL = 20 pF,
RL = 1 kΩ against VCC/2(1)(2)
3 V 12 MHz
fPort_CLK Clock output frequency Px.y, CL = 20 pF(2) 3 V 16 MHz
(1) Alternatively, a resistive divider with two 2-kΩ resistors between VCC and VSS is used as load. The output is connected to the center tap of the divider.
(2) The output voltage reaches at least 10% and 90% VCC at the specified toggle frequency.

5.11 Typical Characteristics - Outputs

One output loaded at a time.

g_iol_vol_vcc2p2_slas892.gifFigure 5-4 Typical Low-Level Output Current vs Low-Level Output Voltage
g_ioh_voh_vcc2p2_slas892.gifFigure 5-6 Typical High-Level Output Current vs High-Level Output Voltage
g_iol_vol_vcc3_slas892.gifFigure 5-5 Typical Low-Level Output Current vs Low-Level Output Voltage
g_ioh_voh_vcc3_slas892.gifFigure 5-7 Typical High-Level Output Current vs High-Level Output Voltage

5.12 POR and BOR(1)(2)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
VCC(start) See Figure 5-8 dVCC /dt ≤ 3 V/s 0.7 × V(B_IT-) V
V(B_IT-) See Figure 5-8 through Figure 5-10 dVCC /dt ≤ 3 V/s 1.35 V
Vhys(B_IT-) See Figure 5-8 dVCC /dt ≤ 3 V/s 140 mV
td(BOR) See Figure 5-8 2000 µs
t(reset) Pulse duration needed at RST/NMI pin to accept reset internally 2.2 V 2 µs
(1) The current consumption of the brownout module is already included in the ICC current consumption data. The voltage level V(B_IT-) + Vhys(B_IT-) is ≤ 1.8 V.
(2) During power up, the CPU begins code execution following a period of td(BOR) after VCC = V(B_IT-) + Vhys(B_IT-) . The default DCO settings must not be changed until VCC  ≥ VCC(min), where VCC(min) is the minimum supply voltage for the desired operating frequency.
por_bor_supply_slas892.gifFigure 5-8 POR and BOR vs Supply Voltage

5.13 Typical Characteristics - POR and BOR

vccdrop_square_slas892.gifFigure 5-9 VCC(drop) Level With a Square Voltage Drop to Generate a POR or BOR Signal
vccdrop_triangle_slas892.gifFigure 5-10 VCC(drop) Level With a Triangular Voltage Drop to Generate a POR or BOR Signal

5.14 DCO Frequency

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
VCC Supply voltage range RSELx < 14 1.8 3.6 V
RSELx = 14 2.2 3.6
RSELx = 15 3.0 3.6
fDCO(0,0) DCO frequency (0, 0) RSELx = 0, DCOx = 0, MODx = 0 3 V 0.06 0.14 MHz
fDCO(0,3) DCO frequency (0, 3) RSELx = 0, DCOx = 3, MODx = 0 3 V 0.07 0.17 MHz
fDCO(1,3) DCO frequency (1, 3) RSELx = 1, DCOx = 3, MODx = 0 3 V MHz
fDCO(2,3) DCO frequency (2, 3) RSELx = 2, DCOx = 3, MODx = 0 3 V MHz
fDCO(3,3) DCO frequency (3, 3) RSELx = 3, DCOx = 3, MODx = 0 3 V MHz
fDCO(4,3) DCO frequency (4, 3) RSELx = 4, DCOx = 3, MODx = 0 3 V MHz
fDCO(5,3) DCO frequency (5, 3) RSELx = 5, DCOx = 3, MODx = 0 3 V MHz
fDCO(6,3) DCO frequency (6, 3) RSELx = 6, DCOx = 3, MODx = 0 3 V 0.54 1.06 MHz
fDCO(7,3) DCO frequency (7, 3) RSELx = 7, DCOx = 3, MODx = 0 3 V 0.80 1.50 MHz
fDCO(8,3) DCO frequency (8, 3) RSELx = 8, DCOx = 3, MODx = 0 3 V 1.6 MHz
fDCO(9,3) DCO frequency (9, 3) RSELx = 9, DCOx = 3, MODx = 0 3 V 2.3 MHz
fDCO(10,3) DCO frequency (10, 3) RSELx = 10, DCOx = 3, MODx = 0 3 V 3.4 MHz
fDCO(11,3) DCO frequency (11, 3) RSELx = 11, DCOx = 3, MODx = 0 3 V 4.25 MHz
fDCO(12,3) DCO frequency (12, 3) RSELx = 12, DCOx = 3, MODx = 0 3 V 4.30 7.30 MHz
fDCO(13,3) DCO frequency (13, 3) RSELx = 13, DCOx = 3, MODx = 0 3 V 6.00 9.60 MHz
fDCO(14,3) DCO frequency (14, 3) RSELx = 14, DCOx = 3, MODx = 0 3 V 8.60 13.9 MHz
fDCO(15,3) DCO frequency (15, 3) RSELx = 15, DCOx = 3, MODx = 0 3 V 12.0 18.5 MHz
fDCO(15,7) DCO frequency (15, 7) RSELx = 15, DCOx = 7, MODx = 0 3 V 16.0 26.0 MHz
SRSEL Frequency step between range RSEL and RSEL+1 SRSEL = fDCO(RSEL+1,DCO) /fDCO(RSEL,DCO) 3 V 1.35 ratio
SDCO Frequency step between tap DCO and DCO+1 SDCO = fDCO(RSEL,DCO+1) /fDCO(RSEL,DCO) 3 V 1.08 ratio
Duty cycle Measured at SMCLK 3 V 50%

5.15 Calibrated DCO Frequencies, Tolerance

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNIT
1-MHz tolerance over temperature(1) BCSCTL1 = CALBC1_1MHZ,
DCOCTL = CALDCO_1MHZ,
calibrated at 30°C and 3 V
0°C to 85°C 3 V -3% ±0.5% +3%
1-MHz tolerance over VCC BCSCTL1 = CALBC1_1MHZ,
DCOCTL = CALDCO_1MHZ,
calibrated at 30°C and 3 V
30°C 1.8 V to 3.6 V -3% ±2% +3%
1-MHz tolerance overall BCSCTL1 = CALBC1_1MHZ,
DCOCTL = CALDCO_1MHZ,
calibrated at 30°C and 3 V
-40°C to 85°C 1.8 V to 3.6 V -6% ±3% +6%
8-MHz tolerance over temperature(1) BCSCTL1 = CALBC1_8MHZ,
DCOCTL = CALDCO_8MHZ,
calibrated at 30°C and 3 V
0°C to 85°C 3 V -3% ±0.5% +3%
8-MHz tolerance over VCC BCSCTL1 = CALBC1_8MHZ,
DCOCTL = CALDCO_8MHZ,
calibrated at 30°C and 3 V
30°C 2.2 V to 3.6 V -3% ±2% +3%
8-MHz tolerance overall BCSCTL1 = CALBC1_8MHZ,
DCOCTL = CALDCO_8MHZ,
calibrated at 30°C and 3 V
-40°C to 85°C 2.2 V to 3.6 V -6% ±3% +6%
12-MHz tolerance over temperature(1) BCSCTL1 = CALBC1_12MHZ,
DCOCTL = CALDCO_12MHZ,
calibrated at 30°C and 3 V
0°C to 85°C 3 V -3% ±0.5% +3%
12-MHz tolerance over VCC BCSCTL1 = CALBC1_12MHZ,
DCOCTL = CALDCO_12MHZ,
calibrated at 30°C and 3 V
30°C 2.7 V to 3.6 V -3% ±2% +3%
12-MHz tolerance overall BCSCTL1 = CALBC1_12MHZ,
DCOCTL = CALDCO_12MHZ,
calibrated at 30°C and 3 V
-40°C to 85°C 2.7 V to 3.6 V -6% ±3% +6%
16-MHz tolerance over temperature(1) BCSCTL1 = CALBC1_16MHZ,
DCOCTL = CALDCO_16MHZ,
calibrated at 30°C and 3 V
0°C to 85°C 3 V -3% ±0.5% +3%
16-MHz tolerance over VCC BCSCTL1 = CALBC1_16MHZ,
DCOCTL = CALDCO_16MHZ,
calibrated at 30°C and 3 V
30°C 3.3 V to 3.6 V -3% ±2% +3%
16-MHz tolerance overall BCSCTL1 = CALBC1_16MHZ,
DCOCTL = CALDCO_16MHZ,
calibrated at 30°C and 3 V
-40°C to 85°C 3.3 V to 3.6 V -6% ±3% +6%
(1) This is the frequency change from the measured frequency at 30°C over temperature.

5.16 Wake-Up From Lower-Power Modes (LPM3, LPM4)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
tDCO,LPM3/4 DCO clock wake-up time from LPM3 or LPM4 (1) BCSCTL1 = CALBC1_1MHZ, DCOCTL = CALDCO_1MHZ 3 V 1.5 µs
tCPU,LPM3/4 CPU wake-up time from LPM3 or LPM4 (2) 1 / fMCLK  +
tClock,LPM3/4
(1) The DCO clock wake-up time is measured from the edge of an external wake-up signal (for example, a port interrupt) to the first clock edge observable externally on a clock pin (MCLK or SMCLK).
(2) Parameter applicable only if DCOCLK is used for MCLK.

5.17 Typical Characteristics - DCO Clock Wake-Up Time From LPM3 or LPM4

g_dco_wake_dco_freq_slas892.gifFigure 5-11 Clock Wake-Up Time From LPM3 vs DCO Frequency

5.18 DCO With External Resistor ROSC(1)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
fDCO,ROSC DCO output frequency with ROSC DCOR = 1,
RSELx = 4, DCOx = 3, MODx = 0,
TA = 25°C
2.2 V 1.8 MHz
3 V 1.95
DT Temperature drift DCOR = 1,
RSELx = 4, DCOx = 3, MODx = 0
2.2 V, 3 V ±0.1 %/°C
DV Drift with VCC DCOR = 1,
RSELx = 4, DCOx = 3, MODx = 0
2.2 V, 3 V 10 %/V
(1) ROSC = 100 kΩ. Metal film resistor, type 0257, 0.6 W with 1% tolerance and TK = ±50 ppm/°C.  

5.19 Typical Characteristics - DCO With External Resistor ROSC

g_fdco_rosc_vcc2p2_slas892.gif
VCC = 2.2 V TA = 25°C
Figure 5-12 DCO Frequency vs ROSC
g_fdco_temp_slas892.gif
VCC = 3 V
Figure 5-14 DCO Frequency vs Temperature
g_fdco_rosc_vcc3_slas892.gif
VCC = 3 V TA = 25°C
Figure 5-13 DCO Frequency vs ROSC
g_fdco_vcc_slas892.gif
TA = 25°C
Figure 5-15 DCO Frequency vs Supply Voltage

5.20 Crystal Oscillator LFXT1, Low-Frequency Mode(4)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
fLFXT1,LF LFXT1 oscillator crystal frequency, LF mode 0, 1 XTS = 0, LFXT1Sx = 0 or 1 1.8 V to 3.6 V 32768 Hz
fLFXT1,LF,logic LFXT1 oscillator logic level square wave input frequency, LF mode XTS = 0, XCAPx = 0, LFXT1Sx = 3 1.8 V to 3.6 V 10000 32768 50000 Hz
OALF Oscillation allowance for LF crystals XTS = 0, LFXT1Sx = 0,
fLFXT1,LF = 32768 Hz, CL,eff = 6 pF
500
XTS = 0, LFXT1Sx = 0,
fLFXT1,LF = 32768 Hz, CL,eff = 12 pF
200
CL,eff Integrated effective load capacitance, LF mode(1) XTS = 0, XCAPx = 0 1 pF
XTS = 0, XCAPx = 1 5.5
XTS = 0, XCAPx = 2 8.5
XTS = 0, XCAPx = 3 11
Duty cycle, LF mode XTS = 0, Measured at P2.0/ACLK,
fLFXT1,LF = 32768 Hz
2.2 V 30% 50% 70%
fFault,LF Oscillator fault frequency, LF mode(3) XTS = 0, XCAPx = 0, LFXT1Sx = 3(2) 2.2 V 10 10000 Hz
(1) Includes parasitic bond and package capacitance (approximately 2 pF per pin).
Because the PCB adds additional capacitance, it is recommended to verify the correct load by measuring the ACLK frequency. For a correct setup, the effective load capacitance should always match the specification of the crystal that is used.
(2) Measured with logic-level input frequency but also applies to operation with crystals.
(3) Frequencies below the MIN specification set the fault flag. Frequencies above the MAX specification do not set the fault flag. Frequencies between the MIN and MAX specifications might set the flag.
(4) To improve EMI on the XT1 oscillator, the following guidelines should be observed.
  • Keep the trace between the device and the crystal as short as possible.
  • Design a good ground plane around the oscillator pins.
  • Prevent crosstalk from other clock or data lines into oscillator pins XIN and XOUT.
  • Avoid running PCB traces underneath or adjacent to the XIN and XOUT pins.
  • Use assembly materials and processes that avoid any parasitic load on the oscillator XIN and XOUT pins.
  • If conformal coating is used, make sure that it does not induce capacitive or resistive leakage between the oscillator pins.
  • Do not route the XOUT line to the JTAG header to support the serial programming adapter as shown in other documentation. This signal is no longer required for the serial programming adapter.

5.21 Internal Very-Low-Power Low-Frequency Oscillator (VLO)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TA VCC MIN TYP MAX UNIT
fVLO VLO frequency -40°C to 85°C 3 V 4 12 20 kHz
dfVLO/dT VLO frequency temperature drift (1) -40°C to 85°C 3 V 0.5 %/°C
dfVLO/dVCC VLO frequency supply voltage drift (2) 25°C 1.8 V to 3.6 V 4 %/V
(1) Calculated using the box method:
I version: [MAX(-40...85°C) - MIN(-40...85°C)]/MIN(-40...85°C)/[85°C - (-40°C)]
(2) Calculated using the box method: [MAX(1.8...3.6 V) - MIN(1.8...3.6 V)]/MIN(1.8...3.6 V)/(3.6 V - 1.8 V)

5.22 Crystal Oscillator LFXT1, High-Frequency Mode(5)

PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
fLFXT1,HF0 LFXT1 oscillator crystal frequency, HF mode 0 XTS = 1, LFXT1Sx = 0 1.8 V to 3.6 V 0.4 1 MHz
fLFXT1,HF1 LFXT1 oscillator crystal frequency, HF mode 1 XTS = 1, LFXT1Sx = 1 1.8 V to 3.6 V 1 4 MHz
fLFXT1,HF2 LFXT1 oscillator crystal frequency, HF mode 2 XTS = 1, LFXT1Sx = 2 1.8 V to 3.6 V 2 10 MHz
2.2 V to 3.6 V 2 12
3 V to 3.6 V 2 16
fLFXT1,HF,logic LFXT1 oscillator logic-level square-wave input frequency, HF mode XTS = 1, LFXT1Sx = 3 1.8 V to 3.6 V 0.4 10 MHz
2.2 V to 3.6 V 0.4 12
3 V to 3.6 V 0.4 16
OAHF Oscillation allowance for HF crystals (see Figure 5-16 and Figure 5-17) XTS = 1, LFXT1Sx = 0,
fLFXT1,HF = 1 MHz,
CL,eff = 15 pF
2700 Ω
XTS = 1, LFXT1Sx = 1,
fLFXT1,HF = 4 MHz,
CL,eff = 15 pF
800
XTS = 1, LFXT1Sx = 2,
fLFXT1,HF = 16 MHz,
CL,eff = 15 pF
300
CL,eff Integrated effective load capacitance, HF mode(1) XTS = 1(2) 1 pF
Duty cycle, HF mode XTS = 1,
Measured at P2.0/ACLK,
fLFXT1,HF = 10 MHz
2.2 V 40% 50% 60%
XTS = 1,
Measured at P2.0/ACLK,
fLFXT1,HF = 16 MHz
40% 50% 60%
fFault,HF Oscillator fault frequency(4) XTS = 1, LFXT1Sx = 3(3) 2.2 V 30 300 kHz
(1) Includes parasitic bond and package capacitance (approximately 2 pF per pin). Because the PCB adds additional capacitance, it is recommended to verify the correct load by measuring the ACLK frequency. For a correct setup, the effective load capacitance should always match the specification of the used crystal.
(2) Requires external capacitors at both terminals. Values are specified by crystal manufacturers.
(3) Measured with logic-level input frequency, but also applies to operation with crystals.
(4) Frequencies below the MIN specification set the fault flag. Frequencies above the MAX specification do not set the fault flag. Frequencies between the MIN and MAX specifications might set the flag.
(5) To improve EMI on the XT1 oscillator the following guidelines should be observed:
  • Keep the trace between the device and the crystal as short as possible.
  • Design a good ground plane around the oscillator pins.
  • Prevent crosstalk from other clock or data lines into oscillator pins XIN and XOUT.
  • Avoid running PCB traces underneath or adjacent to the XIN and XOUT pins.
  • Use assembly materials and processes that avoid any parasitic load on the oscillator XIN and XOUT pins.
  • If conformal coating is used, make sure that it does not induce capacitive or resistive leakage between the oscillator pins.
  • Do not route the XOUT line to the JTAG header to support the serial programming adapter as shown in other documentation. This signal is no longer required for the serial programming adapter.

5.23 Typical Characteristics - LFXT1 Oscillator in HF Mode (XTS = 1)

g_osc_allow_fxtal_slas892.gif
CL,eff = 15 pF TA = 25°C
Figure 5-16 Oscillation Allowance vs Crystal Frequency
g_ixtosc_fxtal_slas892.gif
CL,eff = 15 pF TA = 25°C
Figure 5-17 Oscillator Supply Current vs Crystal Frequency

5.24 Timer_A, Timer_B

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
fTA Timer_A clock frequency SMCLK, Duty cycle = 50% ± 10% fSYSTEM MHz
tTA,cap Timer_A capture timing TAx, TBx 3 V 20 ns

5.25 USCI (UART Mode)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
fUSCI USCI input clock frequency Internal: SMCLK, ACLK
External: UCLK
Duty cycle = 50% ± 10%
fSYSTEM MHz
fmax,BITCLK Maximum BITCLK clock frequency
(equals baud rate in MBaud)
3 V 2 MHz
tτ UART receive deglitch time(1) 3 V 50 100 600 ns
(1) The DCO wake-up time must be considered in LPM3/4 for baud rates above 1 MHz.

5.26 USCI (SPI Master Mode)(1)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
(see Figure 5-18 and Figure 5-19)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
fUSCI USCI input clock frequency SMCLK, duty cycle = 50% ± 10% fSYSTEM MHz
tSU,MI SOMI input data setup time 3 V 75 ns
tHD,MI SOMI input data hold time 3 V 0 ns
tVALID,MO SIMO output data valid time UCLK edge to SIMO valid,CL = 20 pF 3 V 20 ns
(1) fUCxCLK = 1/2tLO/HI with tLO/HI ≥ max(tVALID,MO(USCI) + tSU,SI(Slave), tSU,MI(USCI) + tVALID,SO(Slave)).
For the slave parameters tSU,SI(Slave) and tVALID,SO(Slave), see the SPI parameters of the attached slave.
t_spi_master_ckph0_slas892.gifFigure 5-18 SPI Master Mode, CKPH = 0
t_spi_master_ckph1_slas892.gifFigure 5-19 SPI Master Mode, CKPH = 1

5.27 USCI (SPI Slave Mode)(1)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
(see Figure 5-20 and Figure 5-21)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
tSTE,LEAD STE lead time, STE low to clock 3 V 50 ns
tSTE,LAG STE lag time, Last clock to STE high 3 V 10 ns
tSTE,ACC STE access time, STE low to SOMI data out 3 V 50 ns
tSTE,DIS STE disable time, STE high to SOMI high impedance 3 V 50 ns
tSU,SI SIMO input data setup time 3 V 15 ns
tHD,SI SIMO input data hold time 3 V 10 ns
tVALID,SO SOMI output data valid time UCLK edge to SOMI valid,
CL = 20 pF
3 V 50 75 ns
(1) fUCxCLK = 1/2tLO/HI with tLO/HI ≥ max(tVALID,MO(Master) + tSU,SI(USCI), tSU,MI(Master) + tVALID,SO(USCI)).
For the master's parameters tSU,MI(Master) and tVALID,MO(Master) refer to the SPI parameters of the attached slave.
t_spi_slave_ckph0_slas892.gifFigure 5-20 SPI Slave Mode, CKPH = 0
t_spi_slave_ckph1_slas892.gifFigure 5-21 SPI Slave Mode, CKPH = 1

5.28 USCI (I2C Mode)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 5-22)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
fUSCI USCI input clock frequency Internal: SMCLK, ACLK
External: UCLK
Duty cycle = 50% ± 10%
fSYSTEM MHz
fSCL SCL clock frequency 3 V 0 400 kHz
tHD,STA Hold time (repeated) START fSCL ≤ 100 kHz 3 V 4 µs
fSCL > 100 kHz 0.6
tSU,STA Setup time for a repeated START fSCL ≤ 100 kHz 3 V 4.7 µs
fSCL > 100 kHz 0.6
tHD,DAT Data hold time 3 V 0 ns
tSU,DAT Data setup time 3 V 250 ns
tSU,STO Setup time for STOP 3 V 4 µs
tSP Pulse duration of spikes suppressed by input filter 3 V 50 100 600 ns
t_i2c_mode_slas892.gifFigure 5-22 I2C Mode Timing

5.29 10-Bit ADC, Power Supply and Input Range Conditions(1)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNIT
VCC Analog supply voltage range VSS = 0 V 2.2 3.6 V
VAx Analog input voltage range(2) All Ax terminals,
Analog inputs selected in ADC10AE register
3 V 0 VCC V
IADC10 ADC10 supply current(3) fADC10CLK = 5 MHz,
ADC10ON = 1, REFON = 0, ADC10SHT0 = 1,
ADC10SHT1 = 0,
ADC10DIV = 0
25°C 3 V 0.6 mA
IREF+ Reference supply current, reference buffer disabled(4) fADC10CLK = 5 MHz,
ADC10ON = 0, REF2_5V = 0, REFON = 1, REFOUT = 0
25°C 3 V 0.25 mA
fADC10CLK = 5 MHz,
ADC10ON = 0, REF2_5V = 1, REFON = 1, REFOUT = 0
0.25
IREFB,0 Reference buffer supply current with
ADC10SR = 0(4)
fADC10CLK = 5 MHz
ADC10ON = 0, REFON = 1, REF2_5V = 0, REFOUT = 1, ADC10SR = 0
25°C 3 V 1.1 mA
IREFB,1 Reference buffer supply current with
ADC10SR = 1(4)
fADC10CLK = 5 MHz,
ADC10ON = 0, REFON = 1, REF2_5V = 0, REFOUT = 1, ADC10SR = 1
25°C 3 V 0.5 mA
CI Input capacitance Only one terminal Ax selected at a time 25°C 3 V 27 pF
RI Input MUX ON resistance 0 V ≤ VAx ≤ VCC 25°C 3 V 1000 Ω
(1) The leakage current is defined in the leakage current table with Px.x/Ax parameter.
(2) The analog input voltage range must be within the selected reference voltage range VR+ to VR- for valid conversion results.
(3) The internal reference supply current is not included in current consumption parameter IADC10.
(4) The internal reference current is supplied from terminal AVCC. Consumption is independent of the ADC10ON control bit, unless a conversion is active. The REFON bit enables the built-in reference to settle before starting an A/D conversion.

5.30 10-Bit ADC, Built-In Voltage Reference

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
VCC,REF+ Positive built-in reference analog supply voltage range IVREF+ ≤ 1 mA, REF2_5V = 0 2.2 V
IVREF+ ≤ 1 mA, REF2_5V = 1 2.9
VREF+ Positive built-in reference voltage IVREF+ ≤ IVREF+max, REF2_5V = 0 3 V 1.41 1.5 1.59 V
IVREF+ ≤ IVREF+max, REF2_5V = 1 3 V 2.35 2.5 2.65
ILD,VREF+ Maximum VREF+ load current 3 V ±1 mA
VREF+ load regulation IVREF+ = 500 µA ± 100 µA,
Analog input voltage VAx ≈ 0.75 V,
REF2_5V = 0
3 V ±2 LSB
IVREF+ = 500 µA ± 100 µA,
Analog input voltage VAx ≈ 1.25 V,
REF2_5V = 1
3 V ±2
VREF+ load regulation response time IVREF+ = 100 µA to 900 µA,
VAx ≈ 0.5 x VREF+,
Error of conversion result ≤1 LSB, ADC10SR = 0
3 V 400 ns
CVREF+ Maximum capacitance at pin VREF+ IVREF+ ≤ ±1 mA,
REFON = 1, REFOUT = 1
3 V 100 pF
TCREF+ Temperature coefficient(1) IVREF+ = constant with
0 mA ≤ IVREF+ ≤ 1 mA
3 V ±100 ppm/°C
tREFON Settling time of internal reference voltage IVREF+ = 0.5 mA, REF2_5V = 0,
REFON = 0 to 1
3.6 V 30 µs
tREFBURST Settling time of reference buffer to 99.9% VREF IVREF+ = 0.5 mA,
REF2_5V = 1,
REFON = 1,
REFBURST = 1, ADC10SR = 0
3 V 2 µs
(1) Calculated using the box method:
I temperature: (MAX(-40 to 85°C) – MIN(-40 to 85°C)) / MIN(-40 to 85°C) / (85°C – (–40°C))

5.31 10-Bit ADC, External Reference(1)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
VeREF+ Positive external reference input voltage range(2) VeREF+ > VeREF-,
SREF1 = 1, SREF0 = 0
1.4 VCC V
VeREF- ≤ VeREF+ ≤ VCC - 0.15 V,
SREF1 = 1, SREF0 = 1(3)
1.4 3
VeREF- Negative external reference input voltage range(4) VeREF+ > VeREF- 0 1.2 V
ΔVeREF Differential external reference input voltage range
ΔVeREF = VeREF+ - VeREF-
VeREF+ > VeREF-(5) 1.4 VCC V
IVeREF+ Static input current into VeREF+ 0 V ≤ VeREF+ ≤ VCC,
SREF1 = 1, SREF0 = 0
3 V ±1 µA
0 V ≤ VeREF+ ≤ VCC - 0.15 V ≤ 3 V,
SREF1 = 1, SREF0 = 1(3)
3 V 0
IVeREF- Static input current into VeREF- 0 V ≤ VeREF- ≤ VCC 3 V ±1 µA
(1) The external reference is used during conversion to charge and discharge the capacitance array. The input capacitance, CI, is also the dynamic load for an external reference during conversion. The dynamic impedance of the reference supply should follow the recommendations on analog-source impedance to allow the charge to settle for 10-bit accuracy.
(2) The accuracy limits the minimum positive external reference voltage. Lower reference voltage levels may be applied with reduced accuracy requirements.
(3) Under this condition, the external reference is internally buffered. The reference buffer is active and requires the reference buffer supply current IREFB. The current consumption can be limited to the sample and conversion period with REBURST = 1.
(4) The accuracy limits the maximum negative external reference voltage. Higher reference voltage levels may be applied with reduced accuracy requirements.
(5) The accuracy limits the minimum external differential reference voltage. Lower differential reference voltage levels may be applied with reduced accuracy requirements.

5.32 10-Bit ADC, Timing Parameters

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
fADC10CLK ADC10 input clock frequency For specified performance of ADC10 linearity parameters ADC10SR = 0 2.2 V, 3 V 0.45 6.3 MHz
ADC10SR = 1 0.45 1.5
fADC10OSC ADC10 built-in oscillator frequency ADC10DIVx = 0, ADC10SSELx = 0,
fADC10CLK = fADC10OSC
2.2 V, 3 V 3.7 6.3 MHz
tCONVERT Conversion time ADC10 built-in oscillator, ADC10SSELx = 0, fADC10CLK = fADC10OSC 2.2 V, 3 V 2.06 3.51 µs
fADC10CLK from ACLK, MCLK or SMCLK, ADC10SSELx ≠ 0 13 × ADC10DIVx ×
1 / fADC10CLK
tADC10ON Turn on settling time of the ADC(1) 100 ns
(1) The condition is that the error in a conversion started after tADC10ON is less than ±0.5 LSB. The reference and input signal are already settled.

5.33 10-Bit ADC, Linearity Parameters(1)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
EI Integral linearity error SREFx = 010 3 V ±1 LSB
ED Differential linearity error SREFx = 010 3 V ±1 LSB
EO Offset error Source impedance RS < 100 Ω, SREFx = 010 3 V ±1 LSB
EG Gain error SREFx = 010 3 V ±1.1 ±2 LSB
ET Total unadjusted error SREFx = 010 3 V ±2 ±6 LSB
(1) Using the integrated reference buffer (SREFx = 010) increases the gain, and offset and total unadjusted error.

5.34 10-Bit ADC, Temperature Sensor and Built-In VMID(1)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
ISENSOR Temperature sensor supply current(1) REFON = 0, INCHx = 0Ah,
TA = 25°C
3 V 60 µA
TCSENSOR ADC10ON = 1, INCHx = 0Ah(2) 3 V 3.55 mV/°C
tSENSOR(sample) Sample time required if channel 10 is selected(3) ADC10ON = 1, INCHx = 0Ah,
Error of conversion result ≤ 1 LSB
3 V 30 µs
IVMID Current into divider at channel 11 ADC10ON = 1, INCHx = 0Bh 3 V (3) µA
VMID VCC divider at channel 11 ADC10ON = 1, INCHx = 0Bh,
VMID ≈ 0.5 × VCC
3 V 1.5 V
tVMID(sample) Sample time required if channel 11 is selected(4) ADC10ON = 1, INCHx = 0Bh,
Error of conversion result ≤ 1 LSB
3 V 1220 ns
(1) The sensor current ISENSOR is consumed if (ADC10ON = 1 and REFON = 1), or (ADC10ON = 1 and INCH = 0Ah and sample signal is high).When REFON = 1, ISENSOR is included in IREF+.When REFON = 0, ISENSOR applies during conversion of the temperature sensor input (INCH = 0Ah).
(2) The following formula can be used to calculate the temperature sensor output voltage:
VSensor,typ = TCSensor ( 273 + T [°C] ) + VOffset,sensor [mV] or
VSensor,typ = TCSensor T [°C] + VSensor(TA = 0°C) [mV]
(3) No additional current is needed. The VMID is used during sampling.
(4) The on time, tVMID(on), is included in the sampling time, tVMID(sample); no additional on time is needed.

5.35 Flash Memory

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
VCC (PGM/ERASE) Program and erase supply voltage 2.2 3.6 V
fFTG Flash timing generator frequency 257 476 kHz
IPGM Supply current from VCC during program 2.2 V, 3.6 V 1 5 mA
IERASE Supply current from VCC during erase 2.2 V, 3.6 V 1 7 mA
tCPT Cumulative program time(1) 2.2 V, 3.6 V 10 ms
tCMErase Cumulative mass erase time 2.2 V, 3.6 V 20 ms
Program and erase endurance 104 105 cycles
tRetention Data retention duration TJ = 25°C 100 years
tWord Word or byte program time (2)  30 tFTG
tBlock, 0 Block program time for first byte or word (2)  25 tFTG
tBlock, 1-63 Block program time for each additional byte or word (2)  18 tFTG
tBlock, End Block program end-sequence wait time (2)  6 tFTG
tMass Erase Mass erase time (2)  10593 tFTG
tSeg Erase Segment erase time (2)  4819 tFTG
(1) The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming methods: individual word write, individual byte write, and block write modes.
(2) These values are hardwired into the state machine of the flash controller (tFTG = 1/fFTG).

5.36 RAM

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN MAX UNIT
V(RAMh) RAM retention supply voltage (1) CPU halted 1.6 V
(1) This parameter defines the minimum supply voltage VCC when the data in RAM remains unchanged. No program execution should happen during this supply voltage condition.

5.37 JTAG and Spy-Bi-Wire Interface

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER VCC MIN TYP MAX UNIT
fSBW Spy-Bi-Wire input frequency 2.2 V 0 20 MHz
tSBW,Low Spy-Bi-Wire low clock pulse duration 2.2 V 0.025 15 µs
tSBW,En Spy-Bi-Wire enable time
(TEST high to acceptance of first clock edge(1))
2.2 V 1 µs
tSBW,Ret Spy-Bi-Wire return to normal operation time 2.2 V 15 100 µs
fTCK TCK input frequency(2) 2.2 V 0 5 MHz
RInternal Internal pulldown resistance on TEST 2.2 V 25 60 90
(1) Tools accessing the Spy-Bi-Wire interface need to wait for the maximum tSBW,En time after pulling the TEST/SBWTCK pin high before applying the first SBWTCK clock edge.
(2) fTCK may be restricted to meet the timing requirements of the module selected.

5.38 JTAG Fuse(1)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN MAX UNIT
VCC(FB) Supply voltage during fuse-blow condition TA = 25°C 2.5 V
VFB Voltage level on TEST for fuse blow 6 7 V
IFB Supply current into TEST during fuse blow 100 mA
tFB Time to blow fuse 1 ms
(1) After the fuse is blown, no further access to the JTAG/Test, Spy-Bi-Wire, or emulation feature is possible, and JTAG is switched to bypass mode.