JAJSFR4B October   2015  – July 2018 TLV62085

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      代表的なアプリケーション回路図
      2.      VIN = 5Vでの効率
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Save Mode
      2. 7.3.2 100% Duty Cycle Low Dropout Operation
      3. 7.3.3 Soft Start
      4. 7.3.4 Switch Current Limit and Hiccup Short-Circuit Protection
      5. 7.3.5 Undervoltage Lockout
      6. 7.3.6 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Enable and Disable
      2. 7.4.2 Power Good
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Custom Design with WEBENCH® Tools
        2. 8.2.2.2 Setting The Output Voltage
        3. 8.2.2.3 Output Filter Design
        4. 8.2.2.4 Inductor Selection
        5. 8.2.2.5 Capacitor Selection
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 開発サポート
      1. 11.1.1 WEBENCH®ツールによるカスタム設計
      2. 11.1.2 デベロッパー・ネットワークの製品に関する免責事項
    2. 11.2 ドキュメントのサポート
      1. 11.2.1 関連資料
    3. 11.3 ドキュメントの更新通知を受け取る方法
    4. 11.4 コミュニティ・リソース
    5. 11.5 商標
    6. 11.6 静電気放電に関する注意事項
    7. 11.7 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.5 Electrical Characteristics

TJ = 25 °C, and VIN = 3.6 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
IQ Quiescent current into VIN No load, device not switching 17 µA
ISD Shutdown current into VIN EN = Low 0.7 µA
VUVLO Under voltage lock out threshold VIN falling 2.1 2.2 2.3 V
Under voltage lock out hysteresis VIN rising 200 mV
TJSD Thermal shutdown threshold TJ rising 150 °C
Thermal shutdown hysteresis TJ falling 20 °C
LOGIC INTERFACE EN
VIH High-level input voltage VIN = 2.5 V to 6.0 V 1.0 V
VIL Low-level input voltage VIN = 2.5 V to 6.0 V 0.4 V
IEN,LKG Input leakage current into EN pin EN = High 0.01 µA
RPD Pull-down resistance at EN pin EN = Low 400 kΩ
SOFT START, POWER GOOD
tSS Soft start time Time from EN high to 95% of VOUT nominal 0.8 ms
VPG Power good threshold VOUT rising, referenced to VOUT nominal 95%
VOUT falling, referenced to VOUT nominal 90%
VPG,OL Low-level output voltage Isink = 1 mA 0.4 V
IPG,LKG Input leakage current into PG pin VPG = 5.0 V 0.01 µA
OUTPUT
VFB Feedback regulation voltage PWM mode, 2.5 V ≤ VIN ≤ 6 V
TJ = 0°C to 85 °C		 792 800 808 mV
IFB,LKG Feedback input leakage current VFB = 1 V 0.01 µA
RDIS Output discharge resistor EN = LOW, VOUT = 1.8 V 260 Ω
POWER SWITCH
RDS(on) High-side FET on-resistance ISW = 500 mA 31 mΩ
Low-side FET on-resistance ISW = 500 mA 23 mΩ
ILIM High-side FET switch current limit 3.7 4.6 5.5 A
fSW PWM switching frequency IOUT = 1 A 2.4 MHz