JAJSI85C June   2013  – December  2019 TPD2E2U06

PRODUCTION DATA.  

  1. 特長
  2. アプリケーション
  3. 概要
    1.     Device Images
      1.      概略回路図
  4. 改訂履歴
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 IEC 61000-4-2 Level 4
      2. 7.3.2 IO Capacitance
      3. 7.3.3 DC Breakdown Voltage
      4. 7.3.4 Ultra-Low Leakage Current
      5. 7.3.5 Low ESD Clamping Voltage
      6. 7.3.6 Industrial Temperature Range
      7. 7.3.7 Small Easy-to-Route Package
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Signal Range
        2. 8.2.2.2 Operating Frequency
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 商標
    2. 11.2 ドキュメントの更新通知を受け取る方法
    3. 11.3 サポート・リソース
    4. 11.4 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Typical Characteristics

TPD2E2U06 C002_SLLSEG9.png
Figure 1. TLP, Data to GND
TPD2E2U06 C004_SLLSEG9.png
Figure 3. IEC 61000-4-2 Clamping Voltage, +8 kV Contact
TPD2E2U06 C006_SLLSEG9.png
TA = 25°C
Figure 5. IV Curve
TPD2E2U06 C008_SLLSEG9.gif
f = 1 MHz
Figure 7. Capacitance Across VBIAS
TPD2E2U06 C010_SLLSEG9.png
Figure 9. Insertion Loss
TPD2E2U06 C003_SLLSEG9.png
Figure 2. TLP, GND to Data
TPD2E2U06 C005_SLLSEG9.png
Figure 4. IEC 61000-4-2 Clamping Voltage, –8 kV Contact
TPD2E2U06 C007_SLLSEG9.gif
VIN 2.5 V
Figure 6. ILEAK vs Temperature
TPD2E2U06 C009_SLLSEG9.png
Figure 8. Surge Curve (tp = 8/20 μs) IO to GND