JAJSJE1A July   2021  – December 2021 TPS1HC100-Q1

PRODUCTION DATA  

  1. 特長
  2. アプリケーション
  3. 説明
  4. Revision History
  5. Pin Configuration and Functions
    1. 5.1 Recommended Connections for Unused Pins
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SNS Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Accurate Current Sense
      2. 8.3.2 Programmable Current Limit
        1. 8.3.2.1 Capacitive Charging
      3. 8.3.3 Inductive-Load Switching-Off Clamp
      4. 8.3.4 Full Protections and Diagnostics
        1. 8.3.4.1  Short-Circuit and Overload Protection
        2. 8.3.4.2  Open-Load and Short-to-Battery Detection
        3. 8.3.4.3  Short-to-Battery Detection
        4. 8.3.4.4  Reverse-Polarity and Battery Protection
        5. 8.3.4.5  Latch-Off Mode
        6. 8.3.4.6  Thermal Protection Behavior
        7. 8.3.4.7  UVLO Protection
        8. 8.3.4.8  Loss of GND Protection
        9. 8.3.4.9  Loss of Power Supply Protection
        10. 8.3.4.10 Reverse Current Protection
        11. 8.3.4.11 Protection for MCU I/Os
      5. 8.3.5 Diagnostic Enable Function
    4. 8.4 Device Functional Modes
      1. 8.4.1 Working Mode
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Dynamically Changing Current Limit
        2. 9.2.2.2 AEC Q100-012 Test Grade A Certification
        3. 9.2.2.3 EMC Transient Disturbances Test
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
      1. 11.2.1 Without a GND Network
      2. 11.2.2 With a GND Network
    3. 11.3 Thermal Considerations
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 サポート・リソース
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • PWP|14
サーマルパッド・メカニカル・データ
発注情報

Inductive-Load Switching-Off Clamp

When an inductive load is switching off, the output voltage is pulled down to negative, due to the inductance characteristics. The power FET can break down if the voltage is not clamped during the current-decay period. To protect the power FET in this situation, internally clamp the drain-to-source voltage, namely VDS,clamp, the clamp diode between the drain and gate.

Equation 5. GUID-ED48EDB5-476E-4E51-9BEB-3D2BB0672649-low.gif

During the current-decay period (TDECAY), the power FET is turned on for inductance-energy dissipation. Both the energy of the power supply (EBAT) and the load (ELOAD) are dissipated on the high-side power switch itself, which is called EHSD. If resistance is in series with inductance, some of the load energy is dissipated in the resistance.

Equation 6. GUID-B00F903C-3705-4D6E-BF3D-E764BE744BAA-low.gif

From the high-side power switch’s view, EHSD equals the integration value during the current-decay period.

Equation 7. GUID-09B8AC29-47D8-4A77-93A7-E501898E66CB-low.gif
Equation 8. GUID-7AADB41F-9BC9-4A67-A279-EAA406000CB2-low.gif
Equation 9. GUID-C1D97A58-4C04-41AE-B309-F4A1D01340C5-low.gif

When R approximately equals 0, EHSD can be given simply as:

Equation 10. GUID-DBA71F5F-5016-42D9-9D8C-372F56507D02-low.gif
GUID-07A9F4AC-BD65-49E0-8008-12A3ACE79242-low.gifFigure 8-7 Driving Inductive Load
GUID-52DBB628-475A-4FF8-8CC6-A1873D0E1AE8-low.gifFigure 8-8 Inductive-Load Switching-Off Diagram

When switching off, battery energy and load energy are dissipated on the high-side power switch, which leads to the large thermal variation. For each high-side power switch, the upper limit of the maximum safe power dissipation depends on the device intrinsic capacity, ambient temperature, and board dissipation condition.

See Figure 8-9 for one dedicated inductance, 5 mH. If the maximum switching-off current is lower than the current value shown on the curve, the internal clamp function can be used for the demagnetization energy dissipation. If not, external free-wheeling circuitry is necessary for device protection.

GUID-20211201-SS0I-3HFL-KCLS-ZT8HZHPRFGG0-low.pngFigure 8-9 5-mH Maximum Demagnetization Curve