JAJSCS0C December   2016  – January 2018

PRODUCTION DATA.

1. 特長
2. アプリケーション
3. 概要
4. 改訂履歴
5. Device Comparison Table
6. Pin Configuration and Functions
7. Specifications
8. Parameter Measurement Information
9. Detailed Description
1. 9.1 Overview
2. 9.2 Functional Block Diagram
3. 9.3 Feature Description
4. 9.4 Device Functional Modes
10. 10Application and Implementation
1. 10.1 Application Information
2. 10.2 ON and OFF Control
3. 10.3 Input Capacitor (Optional)
4. 10.4 Output Capacitor (Optional)
5. 10.5 Typical Application
11. 11Power Supply Recommendations
12. 12Layout
13. 13デバイスおよびドキュメントのサポート
1. 13.1 デバイス・サポート
2. 13.2 ドキュメントのサポート
3. 13.3 ドキュメントの更新通知を受け取る方法
4. 13.4 コミュニティ・リソース
5. 13.5 商標
6. 13.6 静電気放電に関する注意事項
7. 13.7 Glossary
14. 14メカニカル、パッケージ、および注文情報

パッケージ・オプション

• DRV|6
• DBV|6
• DRV|6
発注情報

A capacitor to GND on the CT pin sets the slew rate. The voltage on the CT pin can be as high as 2.5 V. An approximate formula for the relationship between CT and slew rate is shown in Equation 3. This equation accounts for 10% to 90% measurement on VOUT and does NOT apply for CT < 1 nF.

Use Table 2 to determine rise times for when Ct ≥ 1 nF.

Equation 3. SR = 46.62 / Ct

where

• SR is the slew rate (in V/µs)
• CT is the the capacitance value on the CT pin (in pF)
• The units for the constant a are µs/V. The units for the constant b are µs/(V × pF).

Rise time can be calculated by dividing the input voltage by the slew rate. Table 2 contains rise time values measured on a typical device. Rise times shown below are only valid for the power-up sequence where VIN is already in steady state condition before the EN/UVLO pin is asserted high.

Table 2. Rise Time Table

CT (pF)RISE TIME (µs) 10% - 90%, CL = 0.1 µF, CIN = 1 µF, RL = 10 Ω
VIN = 18 VVIN = 12 VVIN = 9 VVIN = 5 VVIN = 3.3 V
0 115 91 78 60 98
470 136 94 80 63 98
1000 310 209 158 91 102
2200 688 464 345 198 135
4700 1430 957 704 397 265
10000 3115 2085 1540 864 550
27000 8230 5460 4010 2245 1430