JAJSJS0A June   2020  – September 2020 TPS23734

PRODUCTION DATA  

  1. 特長
  2. アプリケーション
  3. 概要
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: DC-DC Controller Section
    6. 7.6 Electrical Characteristics PoE
    7.     15
    8. 7.7 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  CLS Classification
      2. 8.3.2  DEN Detection and Enable
      3. 8.3.3  APD Auxiliary Power Detect
      4. 8.3.4  Internal Pass MOSFET
      5. 8.3.5  T2P and APDO Indicators
      6. 8.3.6  DC-DC Controller Features
        1. 8.3.6.1 VCC, VB, VBG and Advanced PWM Startup
        2.       28
        3. 8.3.6.2 CS, Current Slope Compensation and blanking
        4. 8.3.6.3 COMP, FB, EA_DIS, CP, PSRS and Opto-less Feedback
        5. 8.3.6.4 FRS Frequency Setting and Synchronization
        6. 8.3.6.5 DTHR and Frequency Dithering for Spread Spectrum Applications
        7. 8.3.6.6 SST and Soft-Start of the Switcher
        8. 8.3.6.7 SST, I_STP, LINEUV and Soft-Stop of the Switcher
      7. 8.3.7  Switching FET Driver - GATE, GTA2, DT
      8. 8.3.8  EMPS and Automatic MPS
      9. 8.3.9  VDD Supply Voltage
      10. 8.3.10 RTN, AGND, GND
      11. 8.3.11 VSS
      12. 8.3.12 Exposed Thermal pads - PAD_G and PAD_S
    4. 8.4 Device Functional Modes
      1. 8.4.1  PoE Overview
      2. 8.4.2  Threshold Voltages
      3. 8.4.3  PoE Start-Up Sequence
      4. 8.4.4  Detection
      5. 8.4.5  Hardware Classification
      6. 8.4.6  Maintain Power Signature (MPS)
      7. 8.4.7  Advanced Start-Up and Converter Operation
      8. 8.4.8  Line Undervoltage Protection and Converter Operation
      9. 8.4.9  PD Self-Protection
      10. 8.4.10 Thermal Shutdown - DC-DC Controller
      11. 8.4.11 Adapter ORing
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Detailed Design Procedure
          1. 9.2.1.1.1  Input Bridges and Schottky Diodes
          2. 9.2.1.1.2  Input TVS Protection
          3. 9.2.1.1.3  Input Bypass Capacitor
          4. 9.2.1.1.4  Detection Resistor, RDEN
          5. 9.2.1.1.5  Classification Resistor, RCLS.
          6. 9.2.1.1.6  Dead Time Resistor, RDT
          7. 9.2.1.1.7  APD Pin Divider Network, RAPD1, RAPD2
          8. 9.2.1.1.8  Setting Frequency (RFRS) and Synchronization
          9. 9.2.1.1.9  Bias Supply Requirements and CVCC
          10. 9.2.1.1.10 APDO, T2P Interface
          11. 9.2.1.1.11 Secondary Soft Start
          12. 9.2.1.1.12 Frequency Dithering for Conducted Emissions Control
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 EMI Containment
    4. 11.4 Thermal Considerations and OTSD
    5. 11.5 ESD
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 サポート・リソース
    3. 12.3 Trademarks
    4. 12.4 静電気放電に関する注意事項
    5. 12.5 用語集
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Internal Pass MOSFET

RTN pin provides the negative power return path for the load. It is internally connected to the drain of the PoE hotswap MOSFET, and the DC-DC controller return. RTN must be treated as a local reference plane (ground plane) for the DC-DC controller and converter primary to maintain signal integrity.

Once VVDD exceeds the UVLO threshold, the internal pass MOSFET pulls RTN to VSS. Inrush limiting prevents the RTN current from exceeding a nominal value of about 140 mA until the bulk capacitance (CBULK in Figure 9-1) is fully charged. Two conditions must be met to reach the end of inrush phase. The first one is when the RTN current drops below about 90% of nominal inrush current at which point the current limit is changed to 0.925 A, while the second one is to ensure a minimum inrush delay period of 80 ms (tINR_DEL) from beginning of the inrush phase. DC-DC converter switching is permitted once both inrush conditions are met, meaning that the bulk capacitance is fully charged and the inrush period has been completed.

If VRTN - VVSS ever exceeds about 14.8 V for longer than 1.8 ms, then the PD returns to inrush limiting; note that in this particular case, the second condition described above about inrush phase duration (80 ms) is not applicable