JAJSH63C JULY   2012  – April 2019 TPS53015

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      アプリケーション概略図
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Drivers
      2. 7.3.2 5-Volt Regulator
      3. 7.3.3 Soft-Start and Pre-biased Soft-Start Time
      4. 7.3.4 Overcurrent Protection
      5. 7.3.5 Overvoltage and Undervoltage Protection
      6. 7.3.6 UVLO Protection
      7. 7.3.7 Thermal Shutdown
      8. 7.3.8 Power Good
    4. 7.4 Device Functional Modes
      1. 7.4.1 PWM Operation
      2. 7.4.2 Auto-skip Eco-Mode Control
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Determine the Inductance Value
        2. 8.2.2.2 Output Capacitor
        3. 8.2.2.3 Input Capacitor
        4. 8.2.2.4 Bootstrap Capacitor
        5. 8.2.2.5 VREG5 Capacitor
        6. 8.2.2.6 Choose Output Voltage Resistors
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 商標
    2. 11.2 静電気放電に関する注意事項
    3. 11.3 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.3.1 Drivers

The TPS53015 device contains two high-current resistive MOSFET gate drivers. The low-side driver is a PGND referenced, VREG5 powered driver designed to drive the gate of a high-current, low RDS(on) N-channel MOSFET whose source is connected to PGND. The high-side driver is a floating SW referenced, VBST powered driver designed to drive the gate of a high-current, low RDS(on) N-channel MOSFET. To maintain the VBST voltage during the high-side driver ON-time, a capacitor is placed from SW to VBST. Each driver draws average current equal to gate charge (Qg and Vgs = 5 V) times switching frequency (fSW). To prevent cross-conduction, there is a narrow dead-time when both high-side and low-side drivers are OFF between each driver transition. During this time the inductor current is carried by one of the MOSFETs body diodes.