SLVSC27D July   2013  – October 2016 TPS65631W

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Simplified Schematic
  5. 5 Revision History
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Boost Converter
      2. 8.3.2 Inverting Buck-Boost Converter
      3. 8.3.3 Soft-Start and Start-Up Sequence
      4. 8.3.4 Enable (CTRL)
      5. 8.3.5 Undervoltage Lockout
      6. 8.3.6 Short Circuit Protection
        1. 8.3.6.1 Short-Circuits During Normal Operation
        2. 8.3.6.2 Short-Circuits During Start-Up
      7. 8.3.7 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Operation with VI < 2.9 V
      2. 8.4.2 Operation with VI ≈ VPOS (Diode Mode)
      3. 8.4.3 Operation with CTRL
    5. 8.5 Programming
      1. 8.5.1 Programming VNEG
  9. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Inductor Selection
        2. 9.2.2.2 Capacitor Selection
        3. 9.2.2.3 Stability
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Input voltage (2) SWP, OUTP, FBS, PVIN, AVIN –0.3 6 V
OUTN –0.3 –6 V
SWN –6 6 V
CTRL –0.3 5.5 V
Operating junction temperature, TJ –40 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) With respect to AGND pin.

7.2 ESD Ratings

VALUE UNIT
VESD Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2) ±500 V
Machine model (MM) ESD stress voltage ± 200 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process..

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
PARAMETER MIN NOM MAX UNIT
VI Input supply voltage range 2.9 3.7 4.5 V
VO Output voltage range VPOS 4.6 V
VNEG –4.4 –4 –1.4
IO Output current range IPOS 0 200 mA
INEG 0 200
TA Operating ambient temperature –40 25 85 °C
TJ Operating junction temperature –40 85 125

7.4 Thermal Information

THERMAL METRIC(1) DSK UNIT
10 PINS
RθJA Junction-to-ambient thermal resistance 47.1 °C/W
RθJCtop Junction-to-case (top) thermal resistance 57.8 °C/W
RθJB Junction-to-board thermal resistance 21.1 °C/W
ψJT Junction-to-top characterization parameter 0.8 °C/W
ψJB Junction-to-board characterization parameter 21.4 °C/W
RθJCbot Junction-to-case (bottom) thermal resistance 4.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics

VI = 3.7 V, V(CTRL) = 3.7 V, VPOS = 4.6 V, VNEG = –4.0 V, TJ = –40°C to 125°C, typical values are at TJ = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
II Shutdown current into AVIN and PVIN CTRL pin connected to ground. 0.1 µA
VUVLO Undervoltage lockout threshold VI rising. 2.4 V
VI falling. 2.1
BOOST CONVERTER
VO Output voltage 4.6 V
Output voltage tolerance 25°C ≤ TJ ≤ 85°C, no load –0.5% 0.5%
–40°C ≤ TJ < 85°C, no load –0.8% 0.8%
rDS(on) Switch (low-side) on-resistance I(SWP) = 200 mA 200 mΩ
Rectifier (high-side) on-resistance I(SWP) = 200 mA 350
Switching frequency IO = 200 mA 1.7 MHz
Switch current limit Inductor valley current 0.8 1 A
Short-circuit threshold voltage in operation VO falling 4.1 V
Short-circuit detection time during operation 3 ms
Output sense threshold voltage using OUTP V(OUTP) - V(FBS) increasing 300 mV
Output sense threshold voltage using FBS V(OUTP) - V(FBS) decreasing 200 mV
Input resistance of FBS Between FBS pin and ground 4 MΩ
Discharge resistance CTRL pin connected to ground,
IO = 1 mA		 30 Ω
Line regulation IO = 200 mA 0.002 %/V
Load regulation 0.01 %/A
INVERTING BUCK-BOOST CONVERTER
VO Output voltage default –4.0 V
Output voltage range –4.4 –1.4
Output voltage tolerance –0.05 0.05
rDS(on) Switch (high-side) on-resistance I(SWN) = 200 mA 200 mΩ
Rectifier (low-side) on-resistance I(SWN) = 200 mA 300
Switching frequency IO = 10 mA 1.7 MHz
Switch current limit VI = 2.9 V 1.5 2.2 A
Short-circuit threshold voltage during operation Voltage drop from nominal VO 500 mV
Short-circuit threshold voltage during start-up 180 200 230
tSCP Short-circuit detection time during start-up 10 ms
Short-circuit detection time during operation 3 ms
Discharge resistance CTRL pin connected to ground,
IO = 1 mA		 150 Ω
Line regulation IO = 200 mA 0.006 %/V
Load regulation 0.31 %/A
CTRL
High-level threshold voltage 1.2 V
Low-level threshold voltage 0.4 V
Pull-down resistance 150 400 860 kΩ
OTHER
tINIT Initialization time 300 400 µs
tSDN Shut-down time 30 80 µs
tSTORE Data storage time 30 80 µs
TSD Thermal shutdown temperature 145 °C

7.6 Timing Requirements

MIN TYP MAX UNIT
CTRL Interface
tHIGH High-level pulse duration 2 10 25 µs
tLOW Low-level pulse duration 2 10 25 µs
tOFF Shut-down pulse duration (CTRL = low) 200 µs

7.7 Typical Characteristics

At TA = 25°C, unless otherwise noted.

TPS65631W TPS65631W_Typ_Char_01.png
Figure 1. Shutdown Current into AVIN and PVIN
TPS65631W TPS65631W_Typ_Char_03.png
Figure 3. Boost Converter Rectifier rDS(on)
TPS65631W TPS65631W_Typ_Char_05.png
Figure 5. Inverting Buck-Boost Converter Rectifier rDS(on)
TPS65631W TPS65631W_Typ_Char_02.png
Figure 2. Boost Converter Switch rDS(on)
TPS65631W TPS65631W_Typ_Char_04.png
Figure 4. Inverting Buck-Boost Converter Switch rDS(on)