SLUSDE1D November   2018  – February 2021 UCC21540 , UCC21540A , UCC21541 , UCC21542

PRODMIX  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     UCC21540, UCC21541 Pin Functions
    2.     UCC21542 Pin Functions
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety-Limiting Values
    9. 7.9  Electrical Characteristics
    10. 7.10 Switching Characteristics
    11. 7.11 Insulation Characteristics Curves
    12. 7.12 Typical Characteristics
  8. Parameter Measurement Information
    1. 8.1 Minimum Pulses
    2. 8.2 Propagation Delay and Pulse Width Distortion
    3. 8.3 Rising and Falling Time
    4. 8.4 Input and Disable Response Time
    5. 8.5 Programmable Dead Time
    6. 8.6 Power-up UVLO Delay to OUTPUT
    7. 8.7 CMTI Testing
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 VDD, VCCI, and Under Voltage Lock Out (UVLO)
      2. 9.3.2 Input and Output Logic Table
      3. 9.3.3 Input Stage
      4. 9.3.4 Output Stage
      5. 9.3.5 Diode Structure in the UCC2154x
    4. 9.4 Device Functional Modes
      1. 9.4.1 Disable Pin
      2. 9.4.2 Programmable Dead Time (DT) Pin
        1. 9.4.2.1 DT Pin Tied to VCCI
        2. 9.4.2.2 Connecting a Programming Resistor between DT and GND Pins
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Designing INA/INB Input Filter
        2. 10.2.2.2 Select Dead Time Resistor and Capacitor
        3. 10.2.2.3 Select External Bootstrap Diode and its Series Resistor
        4. 10.2.2.4 Gate Driver Output Resistor
        5. 10.2.2.5 Gate to Source Resistor Selection
        6. 10.2.2.6 Estimating Gate Driver Power Loss
        7. 10.2.2.7 Estimating Junction Temperature
        8. 10.2.2.8 Selecting VCCI, VDDA/B Capacitor
          1. 10.2.2.8.1 Selecting a VCCI Capacitor
          2. 10.2.2.8.2 Selecting a VDDA (Bootstrap) Capacitor
          3. 10.2.2.8.3 Select a VDDB Capacitor
        9. 10.2.2.9 Application Circuits with Output Stage Negative Bias
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Component Placement Considerations
      2. 12.1.2 Grounding Considerations
      3. 12.1.3 High-Voltage Considerations
      4. 12.1.4 Thermal Considerations
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Support Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • DWK|14
  • DW|16
サーマルパッド・メカニカル・データ
発注情報

Insulation Specifications

PARAMETER TEST CONDITIONS VALUE UNIT
CLR External clearance(1) Shortest pin-to-pin distance through air > 8 mm
CPG External creepage(1) Shortest pin-to-pin distance across the package surface > 8 mm
DTI Distance through insulation Minimum internal gap (internal clearance) of the double insulation (2 × 8.5 µm) >17 µm
CTI Comparative tracking index DIN EN 60112 (VDE 0303-11); IEC 60112 > 600 V
Material group According to IEC 60664-1 I
Overvoltage category per IEC 60664-1 Rated mains voltage ≤ 600 VRMS I-IV
Rated mains voltage ≤ 1000 VRMS I-III
DIN V VDE V 0884-11 (VDE V 0884-11): 2017-01(2)
VIORM Maximum repetitive peak isolation voltage AC voltage (bipolar) 1414 VPK
VIOWM Maximum working isolation voltage AC voltage (sine wave); time dependent dielectric breakdown (TDDB), test (See Figure 7-1) 1000 VRMS
DC voltage 1414 VDC
VIOTM Maximum transient isolation voltage VTEST = VIOTM, t = 60 s (qualification)
VTEST = 1.2 × VIOTM, t = 1 s (100% production)
8000 VPK
VIOSM Maximum surge isolation voltage(3) Test method per IEC 62368-1, 1.2/50 µs waveform,
VTEST = 1.6 × VIOSM = 12800 VPK (qualification)
8000 VPK
qpd Apparent charge(4) Method a, After I/O safety test subgroup 2/3.
Vini = VIOTM, tini = 60 s;

Vpd(m) = 1.2 X VIORM = 1697 VPK, tm = 10 s

<5 pC
Method a, After environmental tests subgroup 1.
Vini = VIOTM, tini = 60 s;

Vpd(m) = 1.6 X VIORM = 2262 VPK, tm = 10 s

<5

Method b1; At routine test (100% production) and preconditioning (type test)

Vini = 1.2 × VIOTM; tini = 1 s;

Vpd(m) = 1.875 * VIORM = 2651 VPK , tm = 1 s

<5
CIO Barrier capacitance, input to output(5) VIO = 0.4 sin (2πft), f =1 MHz 1.2 pF
RIO Isolation resistance, input to output(5) VIO = 500 V at TA = 25°C > 1012 Ω
VIO = 500 V at 100°C ≤ TA ≤ 125°C > 1011
VIO = 500 V at TS =150°C > 109
Pollution degree 2
Climatic category 40/125/21
UL 1577
VISO Withstand isolation voltage VTEST = VISO = 5700 VRMS, t = 60 sec. (qualification),

VTEST = 1.2 × VISO = 6840VRMS, t = 1 sec (100% production)

5700 VRMS
Creepage and clearance requirements should be applied according to the specific equipment isolation standards of an application. Care should be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on the printed-circuit board do not reduce this distance. Creepage and clearance on a printed-circuit board become equal in certain cases. Techniques such as inserting grooves, ribs, or both on a printed circuit board are used to help increase these specifications..
This coupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
Apparent charge is electrical discharge caused by a partial discharge (pd).
All pins on each side of the barrier tied together creating a two-pin device.