SNOSB66B August   2011  – November 2014 EMB1412


  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
  7. Detailed Description
    1. 7.1 Overview
  8. Layout
    1. 8.1 Layout Guidelines
    2. 8.2 Thermal Performance
  9. Device and Documentation Support
    1. 9.1 Trademarks
    2. 9.2 Electrostatic Discharge Caution
    3. 9.3 Glossary
  10. 10Mechanical, Packaging, and Orderable Information



1 Features

  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 7 A Sink/3 A Source Current
  • Fast Propagation Times (25 ns Typical)
  • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load)
  • Inverting and Non-Inverting Inputs Provide Either Configuration with a Single Device
  • Supply Rail Under-Voltage Lockout Protection
  • Dedicated Input Ground (IN_REF) for Split Supply or Single Supply Operation
  • Thermally Enhanced 8-Pin VSSOP Package
  • Output Swings from VCC to VEE Which can be Negative Relative to Input Ground

2 Applications

  • Li-Ion Battery Management Systems
  • Hybrid and Electric Vehicles
  • Grid Storage
  • 48 V Systems Supply
  • UPS

3 Description

The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

Device Information(1)

EMB1412 HVSSOP (8) 3.00 mm x 3.00 mm
  1. For all available packages, see the orderable addendum at the end of the datasheet.

4 Revision History

Changes from A Revision (May 2013) to B Revision

  • Added Handling Ratings Table Go
  • Changed layout of National Data Sheet to TI format.Go