The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead
exposed-pad VSSOP package, with improved power dissipation required for high frequency operation.
The compound output driver stage includes MOS and bipolar transistors operating in parallel that
together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS
and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage
lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on
voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for
inverting and non-inverting gate drive with a single device type.