JAJS365D January   2007  – October 2019 TPS2412 , TPS2413

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      代表的なアプリケーションの図
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
    1.     Pin Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Dissipation Ratings
    7. 8.7 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Definitions
      2. 9.3.2 TPS2412 vs TPS2413 – MOSFET Control Methods
      3. 9.3.3 N+1 Power Supply – Typical Connection
      4. 9.3.4 Input ORing – Typical Connection
      5. 9.3.5 System Design and Behavior With Transients
      6. 9.3.6 TPS2412 Regulation-Loop Stability
      7. 9.3.7 MOSFET Selection and R(RSET)
      8. 9.3.8 Gate Drive, Charge Pump and C(BYP)
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
    1. 11.1 Recommended Operating Range
    2. 11.2 VDD, BYP, and Powering Options
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13デバイスおよびドキュメントのサポート
    1. 13.1 関連リンク
    2. 13.2 コミュニティ・リソース
    3. 13.3 商標
    4. 13.4 静電気放電に関する注意事項
    5. 13.5 Glossary
  14. 14メカニカル、パッケージ、および注文情報

8.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted) (1)(2)(3)(4)(5)(6)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(A), V©), VDD
VDD UVLO VDD rising 2.25 2.5 V
Hysteresis 0.25
A current | I(A) |, Gate in active region 0.66 1 mA
| I(A) |, Gate saturated high 0.1
C current | I©) |, V(AC)  ≤ 0.1 V 10 μA
VDD current Worst case, gate in active region 4.25 6 mA
Gate saturated high 1.2
TURNON
TPS2412 forward turnon and regulation voltage 7 10 13 mV
TPS2412 forward turnon / turnoff difference R(RSET) = open 7 mV
TPS2413 forward turnon voltage 7 10 13 mV
TURNOFF
Fast turnoff threshold voltage Gate sinks > 10 mA at V(GATE-A) = 2 V 1 3 5 mV
V(A-C) falling, R(RSET) = open
V(A-C) falling, R(RSET) = 28.7 kΩ –17 –13.25 –10
V(A-C) falling, R(RSET) = 3.24 kΩ –170 –142 –114
Turnoff delay V(A) = 12 V, V(A-C): 20 mV →   –20 mV,
V(GATE-A) begins to decrease		 70 ns
Turnoff time V(A) = 12 V, C(GATE-GND) = 0.01 μF, V(A-C):
20 mV →  –20 mV, measure the period to
V(GATE) = V(A) 		130 ns
GATE
Gate positive drive voltage, V(GATE-A) VDD = 3 V, V(A-C) = 20 mV 6 7 8 V
5 V ≤ VDD  ≤ 18 V, V(A-C) = 20 mV 9 10.2 12.5
Gate source current V(A-C) = 50 mV, V(GATE-A) = 4 V 250 290 350 μA
Soft turnoff sink current (TPS2412) V(A-C) = 4 mV, V(GATE-A) = 2 V 2 5 mA
Fast turnoff pulsed current, I(GATE) V(A-C) = –0.1 V A
V(GATE) = 8 V 1.75 2.35
V(GATE) = 5 V 1.25 1.75
Period 7.5 12.5 μs
Sustain turnoff current, I(GATE) V(A-C) = –0.1 V, V©)  ≤ VDD, 3 V ≤ VDD   ≤ 18 V,
2 V ≤ V(GATE)  ≤ 18 V		 15 19.5 mA
MISCELLANEOUS
Thermal shutdown temperature Temperature rising, TJ 135 °C
Thermal hysteresis 10 °C
(1) [3 V ≤ V(A) ≤ 18 V and V©) = VDD] or [0.8 V ≤ V(A)  ≤ 3 V and 3 V ≤ VDD  ≤ 18 V]
(2) C(BYP) = 2200 pF, R(RSET) = open
(3) –40°C ≤ TJ ≤ 125°C
(4) Positive currents are into pins
(5) Typical values are at 25°C
(6) All voltages are with respect to GND.