JAJSH13A March   2019  – June 2019 LMG3410R150 , LMG3411R150

ADVANCE INFORMATION for pre-production products; subject to change without notice.  

  1. 特長
  2. アプリケーション
  3. 概要
    1.     Device Images
      1.      ブロック概略図
      2.      100V/nsを超えるスイッチング性能
  4. 改訂履歴
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Direct-Drive GaN Architecture
      2. 8.3.2 Internal Buck-Boost DC-DC Converter
      3. 8.3.3 Internal Auxiliary LDO
      4. 8.3.4 Fault Detection
        1. 8.3.4.1 Over-current Protection
        2. 8.3.4.2 Over-Temperature Protection and UVLO
      5. 8.3.5 Drive Strength Adjustment
    4. 8.4 Device Functional Modes
      1. 8.4.1 Low-Power Mode
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Slew Rate Selection
          1. 9.2.2.1.1 Startup and Slew Rate with Bootstrap High-Side Supply
        2. 9.2.2.2 Signal Level-Shifting
        3. 9.2.2.3 Buck-Boost Converter Design
      3. 9.2.3 Application Curves
    3. 9.3 Paralleling GaN Devices
    4. 9.4 Do's and Don'ts
  10. 10Power Supply Recommendations
    1. 10.1 Using an Isolated Power Supply
    2. 10.2 Using a Bootstrap Diode
      1. 10.2.1 Diode Selection
      2. 10.2.2 Managing the Bootstrap Voltage
      3. 10.2.3 Reliable Bootstrap Start-up
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Power Loop Inductance
      2. 11.1.2 Signal Ground Connection
      3. 11.1.3 Bypass Capacitors
      4. 11.1.4 Switch-Node Capacitance
      5. 11.1.5 Signal Integrity
      6. 11.1.6 High-Voltage Spacing
      7. 11.1.7 Thermal Recommendations
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 デバイス・サポート
      1. 12.1.1 デベロッパー・ネットワークの製品に関する免責事項
    2. 12.2 ドキュメントのサポート
      1. 12.2.1 関連資料
    3. 12.3 ドキュメントの更新通知を受け取る方法
    4. 12.4 コミュニティ・リソース
    5. 12.5 商標
    6. 12.6 静電気放電に関する注意事項
    7. 12.7 Glossary
  13. 13メカニカル、パッケージ、および注文情報

Do's and Don'ts

The successful use of GaN devices in general and the LMG341xR150 in particular depends on proper use of the device. When using the LMG341xR150, DO:

  • Read and fully understand the datasheet, including the application notes and layout recommendations
  • Use a four-layer board and place the return power path on an inner layer to minimize power-loop inductance
  • Use small, surface-mount bypass and bus capacitors to minimize parasitic inductance
  • Use the proper size decoupling capacitors and locate them close to the IC as described in the Layout Guidelines section
  • Use a signal isolator to supply the input signal for the low side device. If not, ensure the signal source is connected to the signal GND plane which is tied to the power source only at the LMG341xR150 IC
  • Use the FAULT pin to determine power-up state and to detect over-current and over-temperature events and safely shut off the converter.

To avoid issues in your system when using the LMG341xR150, DON'T:

  • Use a single-layer or two-layer PCB for the LMG341xR150 as the power-loop and bypass capacitor inductances will be excessive and prevent proper operation of the IC
  • Reduce the bypass capacitor values below the recommended values
  • Allow the device to experience drain transients above 600 V as they may damage the device
  • Allow significant third-quadrant conduction when the device is OFF or unpowered, which may cause overheating. Self-protection feature cannot protect the device in this mode of operation
  • Ignore the FAULT pin output.