SLAZ186T October   2012  – May 2021 MSP430F2616

 

  1. 1Functional Advisories
  2. 2Preprogrammed Software Advisories
  3. 3Debug Only Advisories
  4. 4Fixed by Compiler Advisories
  5. 5Nomenclature, Package Symbolization, and Revision Identification
    1. 5.1 Device Nomenclature
    2. 5.2 Package Markings
      1.      ZQW113
      2.      PM64
      3.      PN80
      4.      ZCA113
    3. 5.3 Memory-Mapped Hardware Revision (TLV Structure)
  6. 6Advisory Descriptions
    1. 6.1  ADC25
    2. 6.2  BCL12
    3. 6.3  BCL13
    4. 6.4  BCL15
    5. 6.5  CPU8
    6. 6.6  CPU16
    7. 6.7  CPU19
    8. 6.8  DAC4
    9. 6.9  DMA3
    10. 6.10 DMA4
    11. 6.11 DMA13
    12. 6.12 FLASH19
    13. 6.13 FLASH24
    14. 6.14 FLASH25
    15. 6.15 FLASH27
    16. 6.16 FLASH36
    17. 6.17 JTAG23
    18. 6.18 PORT10
    19. 6.19 PORT12
    20. 6.20 TA12
    21. 6.21 TA16
    22. 6.22 TA21
    23. 6.23 TAB22
    24. 6.24 TB2
    25. 6.25 TB16
    26. 6.26 TB24
    27. 6.27 USCI20
    28. 6.28 USCI21
    29. 6.29 USCI22
    30. 6.30 USCI23
    31. 6.31 USCI24
    32. 6.32 USCI25
    33. 6.33 USCI26
    34. 6.34 USCI27
    35. 6.35 USCI30
    36. 6.36 USCI34
    37. 6.37 USCI35
    38. 6.38 USCI40
    39. 6.39 XOSC5
    40. 6.40 XOSC8
  7. 7Revision History

6.16 FLASH36

FLASH Module

Category

Functional

Function

Flash content may degrade due to aborted page erases

Description

If a page erase is aborted by EEIEX, the flash page containing the last instruction before erase operation will start to degrade. This effect is incremental and, after repetitions, may lead to corrupted flash content.

Workaround

- Use the EEI (interrupted erasing) feature instead of EEIEX (abort erasing).
or
- A PSA checksum can be calculated over affected flash page using the marginal read mode (marginal 0). If PSA sum differs from expected PSA value the affected flash page has to be reprogrammed.
or
- Start flash erasing from RAM and limit system frequency to <1MHz (to ensure 6-us delay after EEIEX).  If the last instruction before erasing is located in RAM, flash cell degradation does not occur.