SLVK146 august   2023 TPS7H2211-SEP

PRODUCTION DATA  

  1.   1
  2.   Single-Event Effects Test Report of the TPS7H2211-SEP eFuse
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-Up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
    1. 8.1 Single Event Transients
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A
  15.   B References

3 Device and Test Board Information

The TPS7H2211-SP is packaged in a 32-pin (HTSSOP) plastic package as shown in Figure 3-1. A TPS7H2211EVM evaluation board was used to evaluate the performance and characteristics of the TPS7H2211-SEP under heavy-ions.

Figure 3-2 shows the top view of the evaluation board used for the radiation testing. Figure 3-3 shows the EVM board schematics for dual site testing. For more information about the evaluation board, see the TPS7H2211-SEP Evaluation Module User's Guide.

The package was delidded to reveal the die face for all heavy-ion testing.

GUID-20230814-SS0I-68J5-PNJL-V45ZDZ3JLGBV-low.svg Figure 3-1 Photograph of Delidded TPS7H2211-SEP (Left) and Pin Out Diagram (Right)
GUID-20230814-SS0I-7DNH-BQPC-BDKGBH73LSTF-low.svg Figure 3-2 TPS7H2211-SEP Board Top View
GUID-20230814-SS0I-WG06-ZL3M-RSRNV93L4N3C-low.gif Figure 3-3 TPS7H2211-SEP EVM Schematic