SLVK163 November   2023 TPS7H6003-SP

PRODUCTION DATA  

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Product Description
    2. 1.2 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
      1. 2.3.1 Unbiased
      2. 2.3.2 Biased
    4. 2.4 Test Configuration and Condition
  6. 3TID Characterization Test Results
    1. 3.1 TID Characerization Results Summary
    2. 3.2 Data Sheet Electrical Parameters
  7. 4Applicable and Reference Documents
    1. 4.1 Applicable Documents
    2. 4.2 Reference Documents
  8.   A Appendix: HDR TID Report

1.1 Product Description

The TPS7H6003-SP is a 200-V radiation-hardness-assured, high voltage gate driver for GaN FETs for space applications. The TPS7H6003-SP is designed for high frequency, high efficiency applications. The driver features adjustable dead time capability, small 30-ns propagation delay and 5.5-ns high-side and low-side matching. This part also includes internal high-side and low-side LDOs which specifies a drive voltage of 5 V regardless of supply voltage. The TPS7H6003-SP is packaged in a ceramic 48-HBX (CFP) package.