The TPS7H6003-SP is a 200-V
radiation-hardness-assured, high voltage gate driver for GaN FETs for space
applications. The TPS7H6003-SP is designed for high frequency, high efficiency
applications. The driver features adjustable dead time capability, small 30-ns
propagation delay and 5.5-ns high-side and low-side matching. This part also includes
internal high-side and low-side LDOs which specifies a drive voltage of 5 V regardless
of supply voltage. The TPS7H6003-SP is packaged in a ceramic 48-HBX (CFP)
package.