SLVK226 October   2025 TPS7H4012-SEP

 

  1.   1
  2.   TPS7H4012-SEP and TPS7H4013-SEP Single-Event Effects (SEE)
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 LETEFF and Range Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

Abstract

The purpose of this study is to characterize the single-event effects (SEE) performance due to heavy-ion irradiation of the TPS7H401x-SEP. Heavy-ions with LETEFF of 48 MeV×cm2/mg were used to irradiate seven production devices. Flux of ≈105 ions/cm2/s and fluence of 107 ions/cm2 per run were used for the characterization. The results demonstrated that the TPS7H401x-SEP is SEL-free up to 48 MeV×cm2/mg at T = 125°C and SEB/SEGR free up to 48 MeV×cm2/mg at T = 25°C. Output signals including VOUT (3% window), SS_TR (edge trigger at 50% below nominal) and PWRGD (edge trigger at 50% below nominal) were monitored to check for transients and SEFIs. The results showed the device is SEFI free up to 48 MeV×cm2/mg at T = 25°C. SETs are characterized and discussed at LETEFF = 48 MeV×cm2/mg.