SLVUCO5 March   2023 TPS7H1111-SEP , TPS7H1111-SP

PRODUCTION DATA  

  1.   TPS7H1111EVM
  2.   Trademarks
  3. 1Introduction
    1. 1.1 Related Information
    2. 1.2 Features of the TPS7H1111-SEP
    3. 1.3 Applications
  4. 2Setup
    1. 2.1 Input/Output Connectors and Jumper Descriptions
      1. 2.1.1 Jumpers
      2. 2.1.2 Test Points
    2. 2.2 Equipment Setup
  5. 3Operation
  6. 4Adjustable Operation
  7. 5Test Results
    1. 5.1 Enable and Soft Start Timing
    2. 5.2 PSRR
    3. 5.3 Stability
    4. 5.4 Noise Spectral Density
  8. 6Board Layout
  9. 7Schematic
  10. 8Bill of Materials

Features of the TPS7H1111-SEP

  • Device Radiation Characterization
    • Radiation characterized to a total ionizing dose (TID) of 50 krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 43 MeV-cm2/mg
    • Single-event functional interrupt (SEFI) and single-event transient (SET) characterized to LET = 43 MeV-cm2/mg
    • Ultra-Low Noise: 1.71 µVRMS (typ), 10 Hz - 100 kHz
  • High power-supply rejection ratio, PSRR (typ):
    • 109 dB at 100 Hz
    • 71 dB at 100 kHz
    • 66 dB at 1 MHz
  • Input voltage range from 0.85 V to 7 V
  • Bias supply of 2.2 V to 14 V to minimize power dissipation
  • Output voltage as low as 0.4 V
  • Up to 1.5-A output current
  • Excellent output accuracy over line and load:
    • +1.1% / –1.3% across temperature
    • +0.9% / -0.7% at 25°C
  • Low-dropout: 215 mV (typ) at 1.5 A
  • Programmable soft start control (SS_SET)
  • Open-drain power good (PG) indicator
  • Configurable power good threshold (FB_PG)
  • Exposed control loop with the external compensation STAB pin
  • Internal current limit with configurable behavior
  • Capable of current sharing to enable higher currents