TIDT257A February   2022  – October 2022

 

  1.   Description
  2.   Features
  3.   Application
  4. 1Test Prerequisites
    1. 1.1 Voltage and Current Requirements
    2. 1.2 Considerations
    3. 1.3 Dimensions
  5. 2Testing and Results
    1. 2.1 Efficiency Graphs
    2. 2.2 Efficiency Data
      1. 2.2.1 THD Optimization
    3. 2.3 Thermal Images
      1. 2.3.1 Low-Side GaN Junction Temperature
    4. 2.4 Thermal Mechanical Design
      1. 2.4.1 Design Parameters
      2. 2.4.2 Thermal Resistance Calculation
      3. 2.4.3 Heat-Sink Diagrams
    5. 2.5 EMI
  6. 3Waveforms
    1. 3.1 AC Drop
    2. 3.2 Load Transients
    3. 3.3 Start-Up Sequence

2.4.2 Thermal Resistance Calculation

  • TA = 25°C (measured from GaN TEMP_PWM)
  • TJ = 67°C (measured from GaN TEMP_PWM)
  • Power loss = 7.5 W (at below operating condition and Tj = 67°C)
  • RθJA = (67°C – 25°C) / 7.5 W = 5.6°C/W