SLPS732B june   2021  – april 2023 JFE150

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 AC Measurement Configurations
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Ultra-Low Noise
      2. 8.3.2 Low Gate Current
      3. 8.3.3 Input Protection
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Input Protection Diodes
      2. 9.1.2 Capacitive Transducer Input Stage
      3. 9.1.3 Common-Source Amplifier
      4. 9.1.4 Composite Amplifiers
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Development Support
        1. 10.1.1.1 PSpice® for TI
        2. 10.1.1.2 TINA-TI™ Simulation Software (Free Download)
        3. 10.1.1.3 TI Reference Designs
        4. 10.1.1.4 Filter Design Tool
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-low noise:
    • Voltage noise:
      • 0.8 nV/√Hz at 1 kHz, IDS = 5 mA
      • 0.9 nV/√Hz at 1 kHz, IDS = 2 mA
    • Current noise: 1.8 fA/√Hz at 1 kHz
  • Low gate current: 10 pA (max)

  • Low input capacitance: 24 pF at VDS = 5 V

  • High gate-to-drain and gate-to-source breakdown voltage: –40 V

  • High transconductance: 68 mS

  • Packages: Small SC70 and SOT-23