SBAS427E February   2008  – June 2025 AMC1203

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5.   Device Comparison Table
  6. 4 Pin Configuration and Functions
  7. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety-Related Certifications
    8. 5.8  Safety Limiting Values
    9. 5.9  Electrical Characteristics
    10. 5.10 Switching Characteristics
    11. 5.11 Timing Diagram
    12. 5.12 Typical Characteristics
  8. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Analog Input
      2. 6.3.2 Modulator
      3. 6.3.3 Digital Output
    4. 6.4 Device Functional Modes
  9. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Shunt Resistor Sizing
        2. 7.2.2.2 Input Filter Design
        3. 7.2.2.3 Bitstream Filtering
      3. 7.2.3 Application Curve
    3. 7.3 Best Design Practices
    4. 7.4 Power Supply Recommendations
    5. 7.5 Layout
      1. 7.5.1 Layout Guidelines
      2. 7.5.2 Layout Example
  10. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  11. 9 Revision History
  12. 10Mechanical, Packaging, and Orderable Information
    1. 10.1 Mechanical Data

5.9 Electrical Characteristics

minimum and maximum specifications are at TA = –40°C to 105°C, AVDD = 4.5 V to 5.5 V, DVDD = 4.5 V to 5.5 V, INP = –280 mV to 280 mV, INN = 0 V, and sinc3 filter with OSR = 256 (unless otherwise noted); typical specifications are at TA =25°C, AVDD = 5 V, and DVDD = 5.0 V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG INPUTS
CI Input capacitance to AGND  3 pF
CID Differential input capacitance  6 pF
RID Differential input resistance 28 kΩ
IIL Input leakage current INN = INP = AGND –5 5 nA
CMTI Common-mode transient immunity 15 kV/μs
CMRR Common-mode rejection ratio INP = INN, DC,
VCM min ≤ VIN ≤ VCM max		 92 dB
INP = INN, AC up to 10kHz,
VCM min ≤ VIN ≤ VCM max		 105
DC ACCURACY
DNL Differential nonlinearity Resolution: 16 bits –0.99 0.99 LSB
INL Integral nonlinearity(2) Resolution: 16 bits, AMC1203 –9 ±3 9 LSB
Resolution: 16 bits, AMC1203B –6 ±2 6
EO Offset error(1)(6) INP = INN = AGND  –1 ±0.1 1 mV
TCEO Offset error temperature drift(3) –5 5 µV/°C
EG Gain error  TA = 25°C, AMC1203 –2% ±0.2% 2%
TA = 25°C, AMC1203B –1% ±0.2% 1%
TCEG Gain error temperature drift(4) ±20 ppm/°C
PSRR Power-supply rejection ratio INP = INN = AGND,
4.5V ≤ AVDD ≤ 5.5V,
10kHz, 100mV ripple		 80 dB
AC ACCURACY
SNR Signal-to-noise ratio fIN = 1kHz 80.5 85 dB
SINAD Signal-to-noise + distortion fIN = 1kHz 80 85 dB
THD Total harmonic distortion(5) fIN = 1kHz, AMC1203 –92 –84.5 dB
fIN = 1kHz, AMC1203B –95 –88
SFDR Spurious-free dynamic range fIN = 1kHz, AMC1203 86 92 dB
fIN = 1kHz, AMC1203B 89 95
CMOS LOGIC WITH SCHMITT-TRIGGER
VOH High-level output voltage IOH = –4mA DVDD – 0.4 V
IOH = –8mA DVDD – 0.8
VOL Low-level output voltage IOL = 4mA 0.4 V
IOL = 8mA 0.8
POWER SUPPLY
IAVDD High-side supply current 6 8 mA
IDVDD Low-side supply current 10 12 mA
(1) This parameter is input referred.
(2) Integral nonlinearity is defined as the maximum deviation from a straight line passing through the end-points of the ideal ADC transfer
function expressed as number of LSBs or as a percent of the specified linear full-scale range FSR.
(3) Offset error temperature drift is calculated using the box method, as described by the following equation:
TCEO = (EO,MAX – EO,MIN) / TempRange where EO,MAX and EO,MIN refer to the maximum and minimum EO values measured within the temperature range (–40 to 105℃).
(4) Gain error temperature drift is calculated using the box method, as described by the following equation:
TCEG (ppm) = ((EG,MAX - EG,MIN) / TempRange) x 104 where EG,MAX and EG,MIN refer to the maximum and minimum EG values (in %) measured within the temperature range (–40 to 105℃).
(5) THD is the ratio of the rms sum of the amplitudes of first five higher harmonics to the amplitude of the fundamental.
(6) Maximum values, including temperature drift, are ensured over the full specified temperature range.