SBASB90 February   2025 AMC23C10-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information 
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications (Reinforced Isolation)
    7. 5.7  Safety-Related Certifications 
    8. 5.8  Safety Limiting Values 
    9. 5.9  Electrical Characteristics 
    10. 5.10 Switching Characteristics 
    11. 5.11 Timing Diagrams
    12. 5.12 Insulation Characteristics Curves
    13. 5.13 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Analog Input
      2. 6.3.2 Isolation Channel Signal Transmission
      3. 6.3.3 Digital Outputs
      4. 6.3.4 Power-Up and Power-Down Behavior
      5. 6.3.5 VDD1 Brownout and Power-Loss Behavior
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Voltage Zero-Crossing Detection
      2. 7.2.2 Design Requirements
      3. 7.2.3 Detailed Design Procedure
      4. 7.2.4 Application Curves
    3. 7.3 Best Design Practices
    4. 7.4 Power Supply Recommendations
    5. 7.5 Layout
      1. 7.5.1 Layout Guidelines
      2. 7.5.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.9 Electrical Characteristics 

minimum and maximum specifications apply from TA = –40°C to 125°C, VDD1 = 3.0 V to 25 V, VDD2 = 2.7 V to 5.5 V, INN = GND1, and VINP = –1 V to 4 V(3); typical specifications are at TA = 25°C, VDD1 = 5 V, VDD2 = 3.3 V, and INN = GND1  (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG INPUT
RIN Input resistance INP, INN pin, 0 ≤ VIN ≤ 4 V 1 GΩ
IBIAS Input bias current INP pin, 0 ≤ VIN ≤ 4 V(2) 0.1 25 nA
INP pin, –400 mV ≤ VIN ≤ 0 V(3) –310 –0.5
INP pin, –1V ≤ VIN < –400 mV(4) –80 –40 –10 µA
INN pin, 0 ≤ VIN ≤ 4 V(2) 0.5 12 nA
CIN Input capacitance INP, INN pin 4 pF
COMPARATOR
VIT+ Positive-going trip threshold VINN + VHYS / 2 mV
VIT– Negative-going trip threshold VINN –VHYS / 2 mV
Trip threshold error (VIT+ – VINN – VHYS / 2), VHYS = 25 mV,
INN = GND1, VINP rising		 –6 6 mV
(VIT– – VINN + VHYS / 2), VHYS = 25 mV,
INN = GND1, VINP falling		 –6 6
VHYS Trip threshold hysteresis (VIT+ – VIT–) 25 mV
DIGITAL OUTPUTS
VOL Low-level output voltage ISINK = 4 mA 80 250 mV
VOH High-level output voltage ISOURCE = 4mA (push-pull output only) VDD2 – 175 mV VDD2 V
ILKG Open-drain output leakage current VDD2 = 5 V, VOUT = 5 V 5 100 nA
CMTI Common-mode transient immunity |VINP – VINN| ≥ 25 mV, push-pull output 100 150 V/ns
|VINP – VINN| ≥ 25 mV, open-drain output, RPULLUP = 10 kΩ 75 150
POWER SUPPLY
VDD1UV VDD1 undervoltage detection threshold VDD1 rising 3 V
VDD1 falling 2.9
VDD1POR VDD1 power-on reset threshold VDD1 falling 2.3 V
VDD2UV VDD2 undervoltage detection threshold VDD2 rising 2.7 V
VDD2 falling 2.1
IDD1 High-side supply current 2.6 3.6 mA
IDD2 Low-side supply current 1.8 2.2 mA
(1) But not exceeding the maximum input voltage specified in the Recommended Opertion Conditions table.
(2) The typical value is measured at VIN = 0.4 V.
(3) The typical value is measured at VIN = –400 mV.
(4) The typical value is measured at VIN = 1 V.