SBOK086 December   2024 TRF0208-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1 Overview
  5. 2 Single-Event Effects
  6. 3 Test Device and Evaluation Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Set-Up and Procedures
  10. 7 Single-Event Latch-up (SEL) Results
  11. 8 Single-Event Transients (SET) Results
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A Total Ionizing Dose from SEE Experiments
  15.   B Confidence Interval Calculations
  16.   C References

2 Single-Event Effects

The primary concern for the TRF0208-SEP is the resilience against the destructive single-event effects (DSEE), such as single-event latch-up (SEL) and single-event-burnout (SEB). Since the operating voltage of TRF0208-SEP is relatively low, 3.3V, SEB is not a concern.

The TRF0208-SEP was characterized for SEL events. In mixed technologies, such as the CBi-CMOS process used for the TRF0208-SEP, the presence of the CMOS circuitry introduces a potential SEL susceptibility. SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-substrate and n-well and n+ and p+ contacts) [1][2]. If formed, the parasitic bipolar structure creates a high-conductance path (creating a steady-state current that is orders-of-magnitude higher than the normal operating current) between power and ground that persists (is “latched”) until power is removed or until the device is destroyed by the high-current state. The TRF0208-SEP exhibited no SEL with heavy-ions of up to LETEFF = 56.1 MeV-cm2/mg at fluences in excess of 107 ions/cm2 and a die temperature of 125°C.

Another concern on high reliability and performance applications is the single-events-transient (SET) characteristic of the device. The TRF0208-SEP SET performance was characterized up to LETEFF = 56.1 MeV-cm2/mg. The device was characterized for SET at supply voltage +3.3V under AC input conditions. Test conditions and results are discussed in Section 8.