SBOK091 December   2024 OPA4H199-SP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Product Description
    2. 1.2 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Facility
    3. 2.3 Test Setup Details
    4. 2.4 Test Configuration and Condition
  6. 3NDD Characterization Test Results
    1. 3.1 NDD Characterization Summary
    2. 3.2 Electrical Characteristics
  7. 4Applicable and Reference Documents
    1. 4.1 Applicable Documents
    2. 4.2 Reference Documents
  8.   A Appendix: NDD Report Data

1.2 Device Details

Table 1-1 lists the device information used in the initial NDD characterization.

Table 1-1 Device and Exposure Details
NDD Exposure Details
TI DeviceOPA4H199-SP
TI Part Name5962R2321401PXE

Package

14-pin SOT-23 (DYY)
TechnologyLinear BiCMOS (LBC9)
Lot Number / Date Code

4007710 / 44AZ

Sample

Quantity		12

+1 control unit

Exposure

Facility		VPT Rad, Chelmsford, MA
Neutron Fluence (1-MeV equivalent) Level1 × 1012, 5 × 1012, 1 × 1013 n/cm2
Irradiation TemperatureAmbient room temperature (25ºC)
OPA4H199-SP OPA4H199-SP Device Figure 1-1 OPA4H199-SP Device