SBOK096A February   2025  – March 2025 SN54SC8T164-SEP , SN54SC8T374-SEP , SN54SC8T574-SEP , SN54SC8T595-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Overview
  5. 2Single-Event Effects (SEE)
  6. 3Test Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Results
    1. 5.1 SEL Results
    2. 5.2 Single-Event Transients (SET)
    3. 5.3 Event Rate Calculations
  9. 6Summary
  10. 7References
  11. 8Revision History

6 Summary

The purpose of this study was to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the SN54SC8T595-SEP radiation-tolerant, 1.2V to 5.5V 8-bit shift registers with 3-state output and logic level shifter. SEE performance was verified at minimum (1.2V) and maximum (5.5V) operating conditions. Heavy-ions with an LETEFF of 50MeV-cm2/ mg were used to irradiate three production devices with a fluence of 1 × 107 ions / cm2. The results demonstrate that the SN54SC8T595-SEP is SEL-free up to LETEFF = 50MeV-cm2/ mg as 125°C. SET performance for the maximum operating voltage saw no excursions ≥ |1%|. The minimum voltage saw 1 excursion at |1%|, as shown and discussed in this report. CREME96-based worst week event-rate calculations for LEO(ISS) and GEO orbits for the SEL and SET are presented for reference.