SBOK111 June   2025 SN55LVTA4-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
      1. 2.3.1 Bias Diagram
    4. 2.4 Test Configuration and Condition
  6. 3TID Characterization Test Results
    1. 3.1 TID Characterization Summary Results
    2. 3.2 Specification Compliance Matrix
  7. 4Reference Documents
  8.   Appendix A: ELDRS Data
  9.   Appendix B: HDR TID Report Data
  10.   Appendix C: LDR TID Report Data

2.2 Test Description and Facilities

The SN55LVTA4-SEP LDR exposure was performed on biased devices in a Co-60 gamma cell at VPT testing facilities in Chelmsford, Massachusetts. The un-attenuated dose rate of this cell is 8.21mrad(Si)/s. After exposure, the devices were shipped to Texas Instruments and full post radiation electrical evaluation using Texas Instruments ATE was conducted and the devices were shipped back to VPT within a 72 hour window. ATE test limits are set per data sheet electrical limits based on qualification and characterization data.

The SN55LVTA4-SEP HDR exposure was performed on biased devices in a Co-60 gamma cell at TI facility in Dallas, Texas. The un-attenuated dose rate of this cell is 169.21rads(Si)/s. After exposure, the devices were packed in dry ice (per MIL-STD-883 Method 1019.9 section 3.10) and full post radiation electrical evaluation using Texas Instruments ATE was conducted. ATE test limits are set per data sheet electrical limits based on qualification and characterization data. Post radiation measurements were taken within 30 minutes of removing the devices from the dry ice container. The devices were allowed to reach room temperature prior to electrical post radiation measurements.