SBOS233H March   2002  – August 2026 OPA2354 , OPA354 , OPA4354

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information OPA354
    5. 6.5 Thermal Information OPA2354
    6. 6.6 Thermal Information OPA4354
    7. 6.7 Electrical Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Operating Voltage
      2. 7.3.2 Rail-to-Rail Input
      3. 7.3.3 Rail-to-Rail Output
      4. 7.3.4 Output Drive
      5. 7.3.5 Video
      6. 7.3.6 Driving Analog-to-Digital Converters
      7. 7.3.7 Capacitive Load and Stability
      8. 7.3.8 Wideband Transimpedance Amplifier
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Optimizing the Transimpedance Circuit
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Power Dissipation
        2. 8.4.1.2 Thermally Enhanced PowerPAD Integrated Circuit Package
        3. 8.4.1.3 PowerPAD™ Integrated Circuit Package Assembly Process
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

6.4 Thermal Information OPA354

THERMAL METRIC(1) OPA354 UNIT
DBV (SOT-23) DDA (HSOP)
5 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 216.3 106.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 115.0 121.8 °C/W
RθJB Junction-to-board thermal resistance 83.2 79.6 °C/W
ψJT Junction-to-top characterization parameter 50.3 57.0 °C/W
ψJB Junction-to-board characterization parameter 82.7 79.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A 64.0 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.