SBOS847B July   2022  – December 2024 OPA817

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics: VS = ±5 V
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input and ESD Protection
      2. 7.3.2 Feedback Pin
      3. 7.3.3 FET-Input Architecture With Wide Gain-Bandwidth Product
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power-Down (PD) Pin
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Wideband, High-Input-Impedance DAQ Front End
    2. 8.2 Typical Applications
      1. 8.2.1 High-Input-Impedance, 200-MHz, Digitizer Front-End Amplifier Design
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Thermal Considerations
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

6.4 Thermal Information

THERMAL METRIC(1) OPA817 UNIT
DTK (WSON)
8 PINS
RθJA Junction-to-ambient thermal resistance 64.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 53.0 °C/W
RθJB Junction-to-board thermal resistance 32.8 °C/W
ΨJT Junction-to-top characterization parameter 1.3 °C/W
ΨJB Junction-to-board characterization parameter 32.8 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 9.0 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.