SBOSAJ9 June   2026 TMCS1170

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Insulation Specifications
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Accuracy Parameters
      1. 7.1.1 Sensitivity Error
      2. 7.1.2 Offset Error
      3. 7.1.3 Nonlinearity Error
      4. 7.1.4 Power Supply Rejection Ratio
      5. 7.1.5 Common-Mode Rejection Ratio
      6. 7.1.6 External Magnetic Field Errors
    2. 7.2 Transient Response Parameters
      1. 7.2.1 CMTI, Common-Mode Transient Immunity
    3. 7.3 Safe Operating Area
      1. 7.3.1 Continuous DC or Sinusoidal AC Current
      2. 7.3.2 Repetitive Pulsed Current SOA
      3. 7.3.3 Single Event Current Capability
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Current Input
      2. 8.3.2 Input Isolation
      3. 8.3.3 Ambient Field Rejection
      4. 8.3.4 Internal Reference Voltage
      5. 8.3.5 Current-Sensing Measurable Ranges
      6. 8.3.6 Overcurrent Detection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power-Down Behavior
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Development Support
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1.     PACKAGE OPTION ADDENDUM
    2. 12.1 Tape and Reel Information
    3. 12.2 Mechanical Data

Offset Error

Offset error is the deviation from the ideal output with zero input current and most often limits measurement accuracy at low input current levels. Offset error can be referred to the output as offset voltage error or referred to the input as offset current error. When divided by device sensitivity, S, output voltage offset error VOE is input referred as input current offset error IOS (see Equation 3). Offset error referred to the input (RTI) allows for more direct comparisons of offset error with input current. Regardless of whether offset error is referred to the input as current offset error IOS, or to the output as voltage offset error VOE, offset error is a single error source and must only be included once in either input-referred or output-referred error calculations.

Equation 3. IOS=VOES

As shown in Figure 7-1, the output voltage offset error VOE of the TMCS1170 is the difference between the zero current output voltage VOUT,0A and fixed internal reference VREF (see Equation 4).

Equation 4. V O E = V O U T , 0 A - V R E F

The output offset error VOE includes magnetic offset error in the Hall sensor, offset voltage error in the signal chain, and offset error in the internal zero current output reference voltage VREF. The value of the internal reference is 2.5V, 1.65V, or 0.5V depending on chosen device number, TMCS1170Axx, TMCS1170Bxx, or TMCS1170Cxx respectively.