SCAS526E August   1995  – July 2025 SN54ACT10 , SN74ACT10

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information
    4. 5.4 Electrical Characteristics
    5. 5.5 Switching Characteristics
    6. 5.6 Operating Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Balanced CMOS Push-Pull Outputs
      2. 7.3.2 TTL-Compatible CMOS Inputs
      3. 7.3.3 Clamp Diode Structure
  9. 8 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Power Considerations
        2. 9.2.1.2 Input Considerations
        3. 9.2.1.3 Output Considerations
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
      4. 9.2.4 Power Supply Recommendations
      5. 9.2.5 Layout
        1. 9.2.5.1 Layout Guidelines
        2. 9.2.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

7.1 Overview

This device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y = A•B•C in positive logic.