SCDS383F August   2018  – July 2025 TMUX6111 , TMUX6112 , TMUX6113

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Thermal Information
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Electrical Characteristics (Dual Supplies: ±15V)
    6. 6.6 Switching Characteristics (Dual Supplies: ±15V)
    7. 6.7 Electrical Characteristics (Single Supply: 12V)
    8. 6.8 Switching Characteristics (Single Supply: 12V)
    9. 6.9 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Truth Tables
  9. 8 Detailed Description
    1. 8.1 Overview
      1. 8.1.1  On-Resistance
      2. 8.1.2  Off-Leakage Current
      3. 8.1.3  On-Leakage Current
      4. 8.1.4  Break-Before-Make Delay
      5. 8.1.5  Turn-On and Turn-Off Time
      6. 8.1.6  Charge Injection
      7. 8.1.7  Off Isolation
      8. 8.1.8  Channel-to-Channel Crosstalk
      9. 8.1.9  Bandwidth
      10. 8.1.10 THD + Noise
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Ultra-low Leakage Current
      2. 8.3.2 Ultra-low Charge Injection
      3. 8.3.3 Bidirectional and Rail-to-Rail Operation
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

8.3.2 Ultra-low Charge Injection

The TMUX6111, TMUX6112, and TMUX6113 are implemented with simple transmission gate topology, as shown in Figure 8-12. Any mismatch in the stray capacitance associated with the NMOS and PMOS causes an output level change whenever the switch is opened or closed. The devices utilize special charge-injection cancellation circuitry that reduces the source (Sx)-to-drain (Dx) charge injection to as low as 0.6pC at VS = 0V, as shown in Figure 8-13.

TMUX6111 TMUX6112 TMUX6113 Transmission Gate TopologyFigure 8-12 Transmission Gate Topology
TMUX6111 TMUX6112 TMUX6113 Source-to-Drain Charge Injection vs Source or Drain VoltageFigure 8-13 Source-to-Drain Charge Injection vs Source or Drain Voltage