SDAA247 January   2026 TPS2HCS10-Q1

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2Melting Fuse Performance
    1. 2.1 Current Rating
    2. 2.2 Rerating Curve
    3. 2.3 I2T Values
      1. 2.3.1 Melting I2T
      2. 2.3.2 Arcing I2T
      3. 2.3.3 Total Clearing I2T
      4. 2.3.4 Fuse I2T Considerations
    4. 2.4 Opening Time
    5. 2.5 Voltage Rating
  6. 3TI Smart eFuse High-Side Switch Performance
    1. 3.1 Process/Voltage/Temperature Considerations
      1. 3.1.1 Max Operating Temperature
    2. 3.2 I2T Curve
      1. 3.2.1 Nominal Current Threshold (INOM)
      2. 3.2.2 I2T Fuse Threshold
      3. 3.2.3 Fixed-Delay Shutdown Threshold
      4. 3.2.4 Immediate Overcurrent Protection Threshold (IOCP)
    3. 3.3 Additional Protections and Diagnostics
      1. 3.3.1 Additional Protections
        1. 3.3.1.1 Short-to-Ground Protection
        2. 3.3.1.2 Capacitive Charging
        3. 3.3.1.3 Limp Home Mode/Watchdog/CRC
        4. 3.3.1.4 Reverse Battery Protection
        5. 3.3.1.5 Loss of Battery/Ground Protection
        6. 3.3.1.6 Integrated Inductive Discharge
      2. 3.3.2 Additional Diagnostics
  7. 4Switching from Melting Fuse to TI Smart eFuse High-Side Switch
    1. 4.1 Melting Fuse Design
    2. 4.2 Current Rating
    3. 4.3 I2T Trip Times
  8. 5Summary
  9. 6References

3.1.1 Max Operating Temperature

TI Smart eFuse High-Side Switches include an overtemperature protection called thermal shutdown. When the internal temperature of the device exceeds about 180°C, the device triggers thermal shutdown and turns the outputs off.

To ensure that thermal shutdown does not occur during normal operation, the chosen device must be able to pass the maximum steady-state load current at the maximum ambient temperature without triggering thermal shutdown. This can be estimated using Equation 4.

Equation 4. T J = T a m b + ( R θ J A * I O U T 2 * R O N , m a x )