SLOK017 June   2024 TLV1H103-SEP

PRODUCTION DATA  

  1.   1
  2. 1 TLV1H103-SEP Single-Event Effects (SEE) Radiation Report
  3.   Trademarks
  4. 2 Overview
  5. 3 SEE Mechanisms
  6. 4 Test Device and Test Board Information
  7. 5 Irradiation Facility and Setup
  8. 6 Results
    1. 6.1 Single Event Latchup (SEL) Results
    2. 6.2 Single Event Transient (SET) Results
  9. 7 Summary
  10. 8 SET Results Appendix
  11. 9 Confidence Interval Calculations
  12. 10References

3 SEE Mechanisms

The primary single-event effect (SEE) events of interest in the TLV1H103-SEP are single-event latch-up (SEL). From a risk/impact point-of-view, the occurrence of an SEL is potentially the most destructive SEE event and the biggest concern for space applications. The 50BICOM3ZL process was used for the TLV1H103-SEP. CMOS circuitry introduces a potential for SEL susceptibility. SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-sub and n-well and n+ and p+ contacts). The parasitic bipolar structure initiated by a single-event creates a high-conductance path (inducing a steady-state current that is typically orders-of-magnitude higher than the normal operating current) between power and ground that persists (is “latched”) until power is removed or until the device is destroyed by the high-current state. The process modifications applied for SEL-mitigation were sufficient as the TLV1H103-SEP exhibited no SEL with heavy-ions up to an LETEFF of 43 MeV-cm2/mg at a fluence of 107 ions/cm2 and a chip temperature of 125°C.

This study was performed to evaluate the SEL effects with a bias voltage of 5.5V on Vcc Supply Voltage. Heavy ions with LETEFF =48.47 MeV-cm2/mg were used to irradiate the devices. Flux of 105 ions/s-cm2 and fluence of 107 ions/cm2 were used during the exposure at 125°C temperature.