SLOK017 June   2024 TLV1H103-SEP

PRODUCTION DATA  

  1.   1
  2. 1 TLV1H103-SEP Single-Event Effects (SEE) Radiation Report
  3.   Trademarks
  4. 2 Overview
  5. 3 SEE Mechanisms
  6. 4 Test Device and Test Board Information
  7. 5 Irradiation Facility and Setup
  8. 6 Results
    1. 6.1 Single Event Latchup (SEL) Results
    2. 6.2 Single Event Transient (SET) Results
  9. 7 Summary
  10. 8 SET Results Appendix
  11. 9 Confidence Interval Calculations
  12. 10References

References

  1. M. Shoga and D. Binder, "Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits", IEEE Trans. Nucl. Sci., Vol. 33(6), Dec. 1986, pp. 1714-1717.
  2. G. Bruguier and J. M. Palau, "Single particle-induced latchup", IEEE Trans. Nucl. Sci., Vol. 43(2), Mar. 1996, pp. 522-532.
  3. TAMU Radiation Effects Facility website. http://cyclotron.tamu.edu/ref/
  4. "The Stopping and Range of Ions in Matter" (SRIM) software simulation tools website. www.srim.org/index.htm#SRIMMENU
  5. D. Kececioglu, “Reliability and Life Testing Handbook”, Vol. 1, PTR Prentice Hall, New Jersey,1993, pp. 186-193.
  6. ISDE CRÈME-MC website.https://creme.isde.vanderbilt.edu/CREME-MC
  7. A. J. Tylka, J. H. Adams, P. R. Boberg, et al.,"CREME96: A Revision of the Cosmic Ray Effects on Micro-Electronics Code", IEEE Trans. on Nucl. Sci., Vol. 44(6), Dec. 1997, pp. 2150-2160.
  8. A. J. Tylka, W. F. Dietrich, and P. R. Boberg, "Probability distributions of high-energy solar-heavy-ion fluxes from IMP-8: 1973-1996", IEEE Trans. on Nucl. Sci.,Vol. 44(6), Dec. 1997, pp. 2140-2149.