SLPS366F June   2012  – January 2025 CSD18504Q5A

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Documentation Support
      1. 5.2.1 Related Documentation
    3. 5.3 Receiving Notification of Documentation Updates
    4. 5.4 Support Resources
    5. 5.5 Trademarks
    6. 5.6 Electrostatic Discharge Caution
    7. 5.7 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

6 Revision History

Changes from Revision E (August 2014) to Revision F (January 2025)

  • Updated the numbering format for tables, figures, and cross-references throughout the documentGo

Changes from Revision D (August 2014) to Revision E (August 2014)

Changes from Revision C (May 2013) to Revision D (August 2014)

  • Added 7-inch reel to Ordering Information table Go
  • Added parameter for power dissipation with case temperature held to 25°C Go
  • Updated pulsed current conditions Go
  • Updated Figure 4-1 to a normalized RθJC curveGo

Changes from Revision B (November 2012) to Revision C (May 2013)

  • Updated Mechanical stencilGo

Changes from Revision A (October 2012) to Revision B (November 2012)

  • Changed the RDS(on) vs VGS and Gate Charge graphsGo
  • Changed RθJA Max value From: 51 To: 50°C/WGo
  • Changed the Typical MOSFET Characteristics sectionGo

Changes from Revision * (June 2012) to Revision A (October 2012)

  • Changed the Transconductance TYP value From: 63S To: 71SGo
  • Changed the Turn On and Turn Off Delay Time, Rise and Fall Time Test Conditions From: IDS = 17A, RG = 2Ω To: IDS = 17A, RG = 0ΩGo
  • Changed the Qrr Reverse Recovery Charge TYP value From: 18nC To: 39nCGo