SLPS366F June   2012  – January 2025 CSD18504Q5A

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Documentation Support
      1. 5.2.1 Related Documentation
    3. 5.3 Receiving Notification of Documentation Updates
    4. 5.4 Support Resources
    5. 5.5 Trademarks
    6. 5.6 Electrostatic Discharge Caution
    7. 5.7 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

3 Description

This 5.3mΩ, SON 5mm × 6mm, 40V NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD18504Q5A Top ViewTop View
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 40 V
Qg Gate Charge Total (4.5V) 7.7 nC
Qgd Gate Charge Gate-to-Drain 2.4 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5V 7.5 mΩ
VGS = 10V 5.3 mΩ
VGS(th) Threshold Voltage 1.9 V
Ordering Information(1)
DeviceQtyMediaPackageShip
CSD18504Q5A250013-Inch ReelSON 5mm × 6mm Plastic PackageTape and Reel
CSD18504Q5AT2507-Inch Reel
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°CVALUEUNIT
VDSDrain-to-Source Voltage40V
VGSGate-to-Source Voltage±20V
IDContinuous Drain Current (Package limited)50A
Continuous Drain Current (Silicon limited), TC = 25°C75
Continuous Drain Current(1)15
IDMPulsed Drain Current(2)275A
PDPower Dissipation(1)3.1W
Power Dissipation, TC = 25°C77
TJ,
Tstg		Operating Junction and
Storage Temperature Range		–55 to 150°C
EASAvalanche Energy, single pulse
ID = 43A, L = 0.1mH, RG = 25Ω		92mJ
(1) Typical RθJA = 40°C/W on a 1-inch2 , 2oz. Cu pad on a
0.06-inch thick FR4 PCB.
(2) Max RθJC = 2.0 °C/W, pulse duration ≤100μs, duty cycle
≤1%
CSD18504Q5A RDS(on) vs VGS RDS(on) vs VGS
CSD18504Q5A Gate Charge Gate Charge