3 Description

This 80V, 2.6mΩ, D²PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-Source Voltage	80		V
Q_g	Gate Charge Total (10V)	76		nC
Q_gd	Gate Charge Gate to Drain	11		nC
R_DS(on)	Drain-to-Source On Resistance	V_GS = 6V	2.9	mΩ
R_DS(on)	Drain-to-Source On Resistance	V_GS = 10V	2.6	mΩ
V_GS(th)	Threshold Voltage	2.6		V

Device Information⁽¹⁾

DEVICE	QTY	MEDIA	PACKAGE	SHIP
CSD19505KTT	500	13-Inch Reel	D²PAK Plastic Package	Tape & Reel
CSD19505KTTT	50	13-Inch Reel	D²PAK Plastic Package	Tape & Reel

(1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-Source Voltage	80	V
V_GS	Gate-to-Source Voltage	±20	V
I_D	Continuous Drain Current (Package Limited)	200	A
	Continuous Drain Current (Silicon Limited), T_C = 25°C	212	A
	Continuous Drain Current (Silicon Limited), T_C = 100°C	150	A
I_DM	Pulsed Drain Current⁽¹⁾	400	A
P_D	Power Dissipation	300	W
T_J, T_stg	Operating Junction, Storage Temperature	–55 to 175	°C
E_AS	Avalanche Energy, Single Pulse I_D = 101A, L = 0.1mH, R_G = 25Ω	510	mJ

(1) Max R_θJC = 0.5°C/W, pulse duration ≤100μs, duty cycle ≤1%.

R_DS(on) vs V_GS

Gate Charge